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208 条记录 (耗时 0.045 秒)

    Vertical type semiconductor device producing apparatus
    51.
    发明申请
    Vertical type semiconductor device producing apparatus 有权
    垂直型半导体器件制造装置

    公开(公告)号：US20080250619A1

    公开(公告)日：2008-10-16

    申请号：US12155625

    申请日：2008-06-06

    申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    IPC分类号： H01L21/67

    CPC分类号： C23C16/45523 ,  C23C16/345 ,  Y10T29/41

    摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

    摘要翻译： 通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体 并从反应室排出第二种气体，以处理设置在反应室中的基板。 第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

    Substrate Processing Apparatus and Semiconductor Device Producing Method
    52.
    发明申请
    Substrate Processing Apparatus and Semiconductor Device Producing Method 有权
    基板加工装置及半导体装置生产方法

    公开(公告)号：US20080153309A1

    公开(公告)日：2008-06-26

    申请号：US10592348

    申请日：2005-03-11

    申请人： Masanori Sakai ,  Tomohiro Yoshimura

    发明人： Masanori Sakai ,  Tomohiro Yoshimura

    IPC分类号： H01L21/00 ,  B05C11/10

    CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67253

    摘要： Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

    摘要翻译： 公开了一种基板处理装置，包括：处理基板的处理室; 用于旋转衬底的衬底旋转机构; 用于向基板供给气体的气体供给单元，至少两种气体A和B交替地供给多次以在基板上形成所需的膜; 以及控制器，用于控制基板的旋转周期或气体供给周期，其被定义为当气体A流动的时刻与下一次气体A流动的时刻之间的时间段，使得旋转周期 并且至少在交替气体供给被执行预定次数时，气体供给周期不彼此同步。

    Substrate Processing Method and Substrate Processing Apparatus
    53.
    发明申请
    Substrate Processing Method and Substrate Processing Apparatus 审中-公开
    基板加工方法及基板加工装置

    公开(公告)号：US20070292974A1

    公开(公告)日：2007-12-20

    申请号：US11664282

    申请日：2006-01-27

    申请人： Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Kazuyuki Okuda

    发明人： Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Kazuyuki Okuda

    IPC分类号： B05C11/00 ,  H01L21/00

    CPC分类号： C23C16/45546 ,  C23C16/345 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141

    摘要： Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.

    摘要翻译： 公开了一种基板处理方法，其中多个处理气体被交替地供给到处理室并从其中排出，所述处理室形成要在其上处理基板或基板的空间，以在基板或每个基板上形成期望的薄膜 包括将衬底或衬底转移到处理室中，并且控制多个处理气体中的一个处理气体的供给时间以控制存在于薄膜中的化学物质的量以及薄膜应力所依赖的现有量 从而控制薄膜的薄膜应力。

    Substrate treatment apparatus and method of manufacturing semiconductor device
    55.
    发明申请
    Substrate treatment apparatus and method of manufacturing semiconductor device 审中-公开
    基板处理装置及半导体装置的制造方法

    公开(公告)号：US20060258174A1

    公开(公告)日：2006-11-16

    申请号：US10549698

    申请日：2004-07-09

    申请人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

    发明人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

    IPC分类号： C23C16/00 ,  H01L21/31

    CPC分类号： H01L21/3162 ,  C23C16/403 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/67109

    摘要： A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).

    摘要翻译： 一种基板处理装置，包括反应管（203）和加热硅晶片（200）的加热器（207），其中三甲基铝（TMA）和臭氧（O 3 3）交替地供给到 反应管（203）以在晶片（200）的表面上产生Al 2 O 3 N 3膜。 该设备还包括用于使臭氧和TMA流动的供应管（232a）和（232b）和向反应管（203）供应气体的喷嘴（233）。 两个供应管（232a）和（232b）连接到设置在加热器（207）内部的喷嘴（233）内，反应管（203）内的温度低于晶片附近的温度 200），并且臭氧和TMA通过喷嘴（233）供应到反应管（203）中。

    MULTI-WINDING MOTOR
    56.
    发明申请
    MULTI-WINDING MOTOR 有权
    多功能电机

    公开(公告)号：US20060220486A1

    公开(公告)日：2006-10-05

    申请号：US11278025

    申请日：2006-03-30

    申请人： Toshihito Miyashita ,  Shintarou Koichi ,  Kazuyoshi Murata ,  Masanori Sakai

    发明人： Toshihito Miyashita ,  Shintarou Koichi ,  Kazuyoshi Murata ,  Masanori Sakai

    IPC分类号： H02K3/00

    CPC分类号： H02K3/28

    摘要： The present invention provides a multi-winding motor of which impedance unbalance between F-phase windings is improved. Two three-phase exciting windings Sa, Sb are wound on each of the magnetic pole sections of divided cores 9. Two kinds of discrete winding wirings A, B are wound together with the same winding number onto each of the magnetic pole sections 13A-13L of the divided cores 9. Divided cores 9 wound with the discrete winding wirings A, B are annularly disposed, and are connected in parallel with each other so that the discrete winding wirings are arranged in the order of A, B, A, B . . . within the same connection, and the exciting windings are star-connected to construct two three-phase exciting windings Sa, Sb.

    摘要翻译： 本发明提供了一种多绕组电动机，其中F相绕组之间的阻抗不平衡得到改善。 两个三相励磁绕组Sa，Sb缠绕在分芯3的每个磁极部分上。将两种分立绕组布线A，B以相同的绕组数卷绕在每个磁极部分13A- 13L的分割铁芯9.用分立的绕组配线A，B缠绕的分割磁芯9是环形设置的，并且彼此并联连接，使得分立的绕组布线按照A，B，A， B。 。 。 在相同的连接中，励磁绕组星形连接构成两个三相励磁绕组Sa，Sb。

    Novel abutted exchange bias design for sensor stabilization
    57.
    发明申请
    Novel abutted exchange bias design for sensor stabilization 失效
    传感器稳定的新型对接交换偏置设计

    公开(公告)号：US20060196039A1

    公开(公告)日：2006-09-07

    申请号：US11074244

    申请日：2005-03-04

    申请人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

    发明人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

    摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

    摘要翻译： 用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。 此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

    Substrate processing apparatus
    59.
    发明申请
    Substrate processing apparatus 审中-公开
    基板加工装置

    公开(公告)号：US20060150905A1

    公开(公告)日：2006-07-13

    申请号：US10530527

    申请日：2003-10-06

    申请人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

    发明人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

    IPC分类号： C23C16/00

    CPC分类号： C23C16/455

    摘要： A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

    摘要翻译： 基板处理装置包括形成用于处理基板7的空间的反应室6和连接到反应室6的气体储存部10，具有用于供给用于处理基板7的气体的气体供给管和用于处理基板7的排气管 排出反应室6内的气体并储存供应到反应室6的气体，并将供给到气体供给管中途的反应室6的气体和旁通燃气保持部10的旁通管路11保持 气体接收部分10与旁路管线平行布置;以及控制部分60，当处理基板7时，通过使用气体储存部分10和旁通管线11中的任何一个将处理气体供应到反应室6。