摘要:
A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要:
An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.
摘要:
A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface. The system for coupling the measuring beam in and the system for coupling it out are configured such that the measuring beam is reflected at least once at the substrate surface and at least once at a reflecting surface of the imaging system that reflects the light employed for measurement purposes before the measuring beam enters the system for coupling it out, which allows employing the image side of the imaging system as part of the focus-detection system. The focus-detection system also operates reliably when used on ultrahigh-aperture lenses that have correspondingly short working distances.
摘要:
The disclosure relates to an image-projecting system, such as a projection objective of a microlithographic projection exposure apparatus. In some embodiments, at least one optical element includes a cubic-crystalline material which at a given operating wavelength has a refractive index n that is greater than 1.6. The image-side numerical aperture NA of the image-projecting system is smaller than the refractive index n. The difference (n−NA) between the refractive index n and the numerical aperture NA of the image-projecting system is at most 0.2.
摘要:
The disclosure relates to an optical system, such as, for example, an illumination system or a projection lens of a microlithographic exposure system. The optical system can have an optical axis and include at least one optical element that includes an optically uniaxial material having, for an operating wavelength of the optical system, an ordinary refractive index no and an extraordinary refractive index ne. The extraordinary refractive index ne can be larger than the ordinary refractive index no. The optical element can absorb, at least for light rays of the operating wavelength entering the optical element with respect to the optical axis under an angle of incidence that lies within a certain angle region, a p-polarized component of the light rays significantly stronger than a s-polarized component of the light rays.
摘要翻译:本公开涉及光学系统,例如微光刻曝光系统的照明系统或投影透镜。 光学系统可以具有光轴,并且包括至少一个光学元件,其包括光学单轴材料,其对于光学系统的工作波长具有普通折射率n和非常折射率 n sub>。 非常折射率n e可以大于普通折射率n≠0。 光学元件至少可以吸收相对于光轴进入光学元件的工作波长的光线,其入射角位于一定角度范围内,光线的p偏振分量明显强于 光线的s偏振分量。
摘要:
There is provided a catadioptric projection objective that includes (a) an object plane having a rectangular object field, and (b) a beam splitter situated in a light path after the object plane, having a rectangular surface adapted to the object field and having an aspect ratio not equal to 1.
摘要:
In a device for reducing the peak power of a pulsed laser light source, in particular for a projection exposure system, there is arranged in the beam path (1) at least one beam splitter apparatus (3, 4) by means of which a detour line (5 or 11) is produced, via reflecting components (6, 7, 8 or 12, 13, 14) for at least one partial beam (1b) with subsequent recombination at a beam recombining element (9 or 15) with the other partial beam or beams (1b or 10b) to form a total beam.
摘要:
A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.
摘要:
A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
摘要:
A method is described for the production of optical components, particularly of crystalline base material, with elevated stability and an optically active three-dimensional shape, which is defined by its surfaces, of high fit accuracy, by shaping the base material into a blank with a desired three-dimensional shape, and applying a covering layer to the surface of the thus-formed three-dimensional shape and the fit accuracy is obtained by abrasion of the covering layer.