利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

55 条记录 (耗时 0.027 秒)

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    51.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20070290264A1

    公开(公告)日：2007-12-20

    申请号：US11674420

    申请日：2007-02-13

    申请人： Nobuyuki Sugii ,  Ryuta Tsuchiya ,  Yusuke Morita

    发明人： Nobuyuki Sugii ,  Ryuta Tsuchiya ,  Yusuke Morita

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7846 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/78654

    摘要： The invention aims at increasing an effect of a strain applying technique for enhancing transistor performance in a fully depleted silicon-on-insulator (FDSOI) type transistor having a thin buried oxide (BOX) film. In an FDSOI type transistor having a very thin SOI structure (6), a stress generating region is formed on a back face side (5) of a very thin BOX layer (4) in order to apply strains to portions in which channels are intended to be formed. Desired portions on a back face side of the BOX layer (4) are amorphized by performing ion implantation, and are then recrystallized by performing a heat treatment in a state where a stress applying film (3) is formed, thereby transferring stresses from the stress applying film (3) to the portions in which the channels are intended to be formed. Thus, the stress generating region is formed.

    摘要翻译： 本发明的目的在于增加在具有薄的掩埋氧化物（BOX）膜的完全耗尽的绝缘体上绝缘体（FDSOI）型晶体管中增强晶体管性能的应变施加技术的效果。 在具有非常薄的SOI结构（6）的FDSOI型晶体管中，在非常薄的BOX层（4）的背面（5）上形成应力产生区域，以便将应变施加到通道所在的部分 要形成 BOX层（4）的背面侧的期望部分通过进行离子注入而非晶化，然后在形成应力施加膜（3）的状态下进行热处理，从而从应力传递应力 将膜（3）施加到要形成通道的部分。 因此，形成应力产生区域。

    Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof
    53.
    发明授权
    Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof 有权
    薄膜半导体集成电路器件及其使用的图像显示器件及其制造方法

    公开(公告)号：US06727514B2

    公开(公告)日：2004-04-27

    申请号：US09811561

    申请日：2001-03-20

    申请人： Seong-kee Park ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Shinya Yamaguchi

    发明人： Seong-kee Park ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Shinya Yamaguchi

    IPC分类号： H01L2906

    CPC分类号： H01L27/1296 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78684

    摘要： At least one of a semiconductor thin-film for forming a picture display portion and a semiconductor thin-film for forming a peripheral circuit portion, which are accumulated on one common insulative substrate, is constructed with a semiconductor thin-film having a plural number of semiconductor crystalline portions formed to be divided and disposed in a matrix-like, and TFTs are provided in the semiconductor thin-film by bringing those semiconductor single crystal portions into active portions thereof. For that purpose, a crystallization accelerating material is adhered at the position of lattice points of a matrix and is treated with heating process, for forming the single crystal portions disposed in the matrix-like manner, so as to form the TFTs on the surface thereof, thereby completing the thin-film semiconductor integrated circuit device.

    摘要翻译： 用于形成图像显示部分的半导体薄膜和积聚在一个公共绝缘基板上的用于形成外围电路部分的半导体薄膜中的至少一个由半导体薄膜构成，半导体薄膜具有多个 通过将这些半导体单晶部分置于其有效部分，半导体晶体部分被形成为分成矩阵状并且设置在半导体薄膜中。 为此，将结晶促进材料粘附在基体的晶格点的位置，并通过加热处理进行处理，以形成以矩阵状排列的单晶部分，从而在其表面上形成TFT 从而完成薄膜半导体集成电路器件。

    Optical communication equipment and system
    54.
    发明授权
    Optical communication equipment and system 失效
    光通信设备及系统

    公开(公告)号：US06529304B1

    公开(公告)日：2003-03-04

    申请号：US09381199

    申请日：1999-09-17

    申请人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

    发明人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

    IPC分类号： H04B1000

    CPC分类号： H04B10/564 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/4202 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/1228 ,  H04B10/291 ,  H04B10/504

    摘要： Configurations of a light signal communication apparatus and an optical communication system suitable for speeding-up of the transmission of information based on a light signal and an increase in the capacity for the information transmission are disclosed. On the light signal transmitting side, excitation light is supplied to an active medium in accordance with a transmission signal to cause induced emission within the active medium, thereby generating signal light. The excitation light causes spontaneously-emitted light to fall on a semiconductor layer, and a voltage pulse corresponding to transmission information is applied to modulate the refractive index of the semiconductor layer, thereby Bragg-reflecting a specific wavelength component, after which it is sent to the active medium as the excitation light. The Bragg reflection and induced emission incident to it exhibit excellent response to a voltage signal having a pulse width of 1×10−9 seconds or less. It is therefore possible to implement an optical communication system having a transmission rate up to 100 Gb/s with one light signal.

    摘要翻译： 公开了一种适于基于光信号加速信息传输和信息传输容量增加的光信号通信装置和光通信系统的配置。 在光信号发送侧，根据发送信号将激励光提供给有源介质，以在有源介质内产生感应发射，从而产生信号光。 激发光引起自发发射的光落在半导体层上，施加与透射信息相对应的电压脉冲，以调制半导体层的折射率，由此布拉格反射特定波长分量，之后将其发送到 活性介质作为激发光。 入射到其的布拉格反射和感应发射对脉冲宽度为1×10-9秒或更小的电压信号表现出优异的响应。 因此，可以通过一个光信号实现具有高达100Gb / s的传输速率的光通信系统。