公开(公告)号：US20180006076A1

公开(公告)日：2018-01-04

申请号：US15198055

申请日：2016-06-30

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Dajiang Yang ,  Keiji Mabuchi ,  Sohei Manabe

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/113

CPC classification number: H01L27/14645 ,  H01L27/14649 ,  H01L31/105 ,  H01L31/1136

Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.

公开(公告)号：US20170345851A1

公开(公告)日：2017-11-30

申请号：US15169477

申请日：2016-05-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L31/0392 ,  H01L31/18

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

Abstract: An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US20170110608A1

公开(公告)日：2017-04-20

申请号：US14882832

申请日：2015-10-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L31/0352 ,  H04N5/369 ,  H04N9/04 ,  H04N9/73 ,  H01L31/032 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/1463

Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.

公开(公告)号：US20170018583A1

公开(公告)日：2017-01-19

申请号：US15280775

申请日：2016-09-29

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kevin Ka Kei Leung ,  Dajiang Yang

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.

Abstract translation: 成像系统包括像素单元的像素阵列，其中每个像素单元包括设置在半导体材料中的光电二极管，全局快门栅极晶体管，设置在半导体材料中并耦合到光电二极管，存储晶体管，设置在半导体中 材料，设置在半导体材料中的隔离结构，以将存储晶体管的侧壁与杂散光和杂散电荷隔离。 光学隔离结构还包括填充有钨的深沟槽隔离结构和在深沟槽光学隔离结构的内侧壁上形成的P +钝化。 每个像素单元还包括耦合到像素阵列的控制电路，以控制像素阵列的操作和耦合到像素阵列的读出电路以从多个像素读出图像数据。

公开(公告)号：US09419044B2

公开(公告)日：2016-08-16

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20160086999A1

公开(公告)日：2016-03-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

Abstract translation: 图像传感器包括靠近第一半导体层的前侧设置的多个光电二极管，以响应于被引导到第一半导体层的前侧的光积累图像电荷。 多个钉扎孔设置在第一半导体层中。 钉扎井分离包括在多个光电二极管中的各个光电二极管。 多个介电层设置在第一半导体层的背面附近。 电介质层被调谐，使得具有基本上等于包含在第一半导体层的前端的光的第一波长的波长的光从电介质层反射回多个光电二极管中相应的一个设置在接近 第一半导体层的前方。

公开(公告)号：US20150303235A1

公开(公告)日：2015-10-22

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US09147776B2

公开(公告)日：2015-09-29

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20150270302A1

公开(公告)日：2015-09-24

申请号：US14222833

申请日：2014-03-24

Applicant: Omnivision Technologies, Inc.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai ,  Dajiang Yang

IPC: H01L27/146 ,  G02B13/00

CPC classification number: H01L27/14627 ,  G02B13/0015 ,  H01L27/14643

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。