公开(公告)号：US4483883A

公开(公告)日：1984-11-20

申请号：US549054

申请日：1983-11-07

申请人： Prem Nath ,  Masatsugu Izu

发明人： Prem Nath ,  Masatsugu Izu

IPC分类号： H01L31/04 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01J37/32018 ,  C23C16/509

摘要： An upstream or predeposition cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the continuous production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed upstream of a substrate. As the process gases are drawn across the surface of the substrate, they are disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate. In this manner, the process gases subjected to the upstream electromagnetic field are more easily broken down by the deposition cathode and deposited onto the substrate in desired chemical combinations and compositions so as to provide improved electrical, chemical and optical properties. Also disclosed herein is the use of such a precathode assembly to aid in the high speed deposition of homogeneous, amorphous, powder-free semiconductor material of uniform thickness across the entire width of the substrate.

摘要翻译： 用于辉光放电沉积设备的上游或预沉积阴极系统，所述设备适于连续生产大面积光伏器件。 在这种装置中，工艺气体通常从设置在基板上游的气体歧管引入沉积室。 当工艺气体被拉过衬底的表面时，它们在由沉积阴极或微波发生器开发的电磁场的影响下被解离并重组。 通过在沉积阴极或微波发生器的上游提供预制阴极系统，（1）处理气体中的杂质，（2）来自沉积室的壁的污染物和（3）最初分离和重组的工艺气体组成可以沉积到 从设置在基板上游的收集板收集。 以这种方式，受到上游电磁场的处理气体更容易被沉积阴极分解，并以所需的化学组合和组合物沉积到衬底上，以提供改进的电学，化学和光学性质。 这里还公开了使用这样的预阴极组件来帮助在衬底的整个宽度上均匀的，无定形的，无粉末的均匀厚度的半导体材料的高速沉积。

公开(公告)号：US4462333A

公开(公告)日：1984-07-31

申请号：US437075

申请日：1982-10-27

申请人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

发明人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

IPC分类号： H01L31/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C13/10

CPC分类号： C23C16/45506 ,  C23C16/455 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/509 ,  H01J37/3244

摘要： A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming nonuniform flow patterns as the semiconductor layer is deposited on the surface of the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.

摘要翻译： 一种用于在辉光放电沉积设备的阴极区域附近引入，限制和排出处理气体的系统，所述设备适于将至少一层半导体材料沉积到衬底上。 沉积设备包括至少一个专用沉积室，其中引入工艺气体用于辉光放电分离成物质。 本发明的系统包括邻近阴极的挡板歧管，所述歧管适于基本上减少流过等离子体区域的工艺气体的局部变化和压缩的区域，以基本上防止相邻的停滞和快速移动的工艺气体区域形成不均匀的流动 作为半导体层的图案沉积在基板的表面上。 该系统还适于暴露用于沉积半导体材料的基板的整个横向宽度。

公开(公告)号：US4419530A

公开(公告)日：1983-12-06

申请号：US347779

申请日：1982-02-11

申请人： Prem Nath

发明人： Prem Nath

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/042 ,  H01L31/06 ,  H01L25/02 ,  H01L31/18

CPC分类号： H01L31/042 ,  H01L31/022425 ,  H01L31/0508 ,  H02S50/10 ,  Y02E10/50 ,  Y10S136/29

摘要： A method of electrically isolating portions of a large surface area semiconductor body for various purposes such as the production of improved photovoltaic and semiconductor devices is disclosed herein. In the preferred embodiment, the photovoltaic devices are of the type which include a common, electrically conductive substrate layer, a semiconductor body deposited upon the substrate layer, and a transparent electrically conductive coating layer is deposited atop the amorphous body. The method includes the steps of dividing the semiconductor body into a plurality of electrically-isolated portions which may include a grid pattern, testing the electrical output of each of the isolated portions of the semiconductor body, connecting only those isolated portions providing satisfactory electrical output to an electrically conductive strip which provides an electrical contact from the semiconductor body, and providing an electrical contact on the substrate, whereby the overall efficiency of the photovoltaic or semiconductor device is improved. The improved solar cell includes a plurality of electrically isolated portions into which the semiconductor body thereof is divided, at least one electrically conductive strip, each isolated portion of the semiconductor body which provides satisfactory electrical output is electrically connected to the conductive strip to provide an electrical contact associated with the semiconductor body, an electrical contact associated with the substrate layer, and an upper, electrically-insulating, protective layer and a lower electrically-insulating layer encapsulate the solar cell. A plurality of such solar cells are electrically connected to form a solar cell panel. Other methods of utilizing electrically isolated portions of a semiconductor body include the production of small surface area semiconductor devices from larger surface area semiconductor devices and a process for improving the electrical output of those isolated portions of a semiconductor body which provide unsatisfactory electrical output.

公开(公告)号：US20050166955A1

公开(公告)日：2005-08-04

申请号：US11006959

申请日：2004-12-08

申请人： Prem Nath ,  Subhendu Guha

发明人： Prem Nath ,  Subhendu Guha

IPC分类号： H01L25/00 ,  H01L31/042 ,  H01L31/048

CPC分类号： H02S40/34 ,  F24S25/10 ,  F24S25/33 ,  F24S2025/02 ,  H02S20/24 ,  Y02B10/12 ,  Y02E10/47

摘要： A support system for retaining a photovoltaic device on a generally planar surface, without any mechanical connection to the surface, includes a frame assembly which rests upon the surface and supports one or more photovoltaic devices in a spaced apart relationship with the surface. At least one ballast pan is attached to the frame assembly. The ballast pan is configured to retain a ballast material therein. The ballast pan may comprise a peripheral ballast pan which extends along the perimeter of the assembly or it may comprise an internal ballast pan which is disposed beneath the photovoltaic device. Also disclosed herein is a method for using the support system.

摘要翻译： 用于将光伏器件保持在大体上平坦的表面上而没有与表面的任何机械连接的支撑系统包括搁置在表面上的框架组件，并以与表面间隔开的关系支撑一个或多个光伏器件。 至少一个压载盘连接到框架组件。 压载盘被配置为在其中保持压载材料。 压载盘可以包括沿着组件的周边延伸的周边压载锅，或者其可以包括设置在光伏器件下方的内部压载盘。 本文还公开了使用支撑系统的方法。

公开(公告)号：US5131954A

公开(公告)日：1992-07-21

申请号：US798848

申请日：1991-11-25

申请人： Craig Vogeli ,  Prem Nath

发明人： Craig Vogeli ,  Prem Nath

IPC分类号： H01L27/142 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/105 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/0236 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： Large area, thin-film body of photovoltaic material is subdivided into a plurality of small area devices. Through a selective etching process, a portion of the bottom electrode of each small area device is exposed. A metallic contact member is deposited upon the exposed portion of the electrode and a series connection between adjoining cells is established by interconnecting the metallic contact member of a first cell with the top electrode of an adjoining cell, so as to provide a large-area photovoltaic device including a plurality of interconnected sub-cells.

摘要翻译： 大面积的薄膜体的光伏材料被细分成多个小区域装置。 通过选择性蚀刻工艺，暴露每个小面积器件的底部电极的一部分。 金属接触构件沉积在电极的暴露部分上，并且通过将第一电池的金属接触构件与相邻电池的顶电极相互连接来建立相邻电池之间的串联连接，以便提供大面积的光电 设备包括多个互连子单元。

公开(公告)号：US5101260A

公开(公告)日：1992-03-31

申请号：US609040

申请日：1990-11-05

申请人： Prem Nath ,  John Call ,  Kevin Hoffman ,  Timothy D. Laarman ,  Gary DiDio

发明人： Prem Nath ,  John Call ,  Kevin Hoffman ,  Timothy D. Laarman ,  Gary DiDio

IPC分类号： H01L31/0236 ,  H01L31/052

CPC分类号： H01L31/0236 ,  H01L31/056 ,  Y02E10/52

摘要： A multilayered, light-scattering back reflector for a photovoltaic device, said back reflector including a first relatively hard, textured layer atop a substrate and a second highly reflective layer conformally disposed atop the first layer. The back reflector may further include a third light scattering layer formed atop said second layer, said third layer adapted to further provide a barrier layer between the body of semiconductor material from which the photovoltaic device is formed and the multilayered back reflector.

摘要翻译： 一种用于光伏器件的多层光散射背反射器，所述后反射器包括在基板顶上的第一相对硬的纹理层和保形地设置在第一层顶上的第二高反射层。 后反射器还可以包括形成在所述第二层上的第三光散射层，所述第三层适于进一步在形成有光电器件的半导体材料体与多层后反射体之间提供阻挡层。

公开(公告)号：US5090356A

公开(公告)日：1992-02-25

申请号：US723042

申请日：1991-06-28

申请人： Prem Nath ,  Jon Call ,  Gary M. Didio ,  Kevin Hoffman

发明人： Prem Nath ,  Jon Call ,  Gary M. Didio ,  Kevin Hoffman

IPC分类号： C23C16/54

CPC分类号： C23C16/545

摘要： An improved gas gate (34) is adapted to operatively interconnect to adjacent chambers in which process gases are introduced for depositing a first layer (16) upon a substrate (11) in a first chamber (28) and different process gases are introduced for depositing a second layer (18) in the second chamber (30) in continuous low pressure glow dicharge deposition process. A plurality of electrodes (60) and grounded shields (62) are positioned in the isolation passageway (92) of gas gate (34). The electrodes (60) have a potential sufficient to create a plasma from any gas molecule escaping from one of the deposition chambers. After the plasma is formed it is attracted to and captured or plated on the shield (62) preventing the gas plasma from landing on the substrate material (11) or passing through the gas gate. The present invention reduces the back diffusion of gases through the gas gate by actively eliminating free gas molecules by ionizing them to form a plasma and capturing the plasma ions in a permanent fashion.

摘要翻译： 改进的气体浇口（34）适于可操作地互连到邻近的室，其中在第一室（28）中引入工艺气体以将第一层（16）沉积在基板（11）上，并且引入不同的工艺气体用于沉积 在第二室（30）中的连续低压辉光放电沉积工艺中的第二层（18）。 多个电极（60）和接地屏蔽（62）位于气门（34）的隔离通道（92）中。 电极（60）具有足以从任何一个沉积室逸出的任何气体分子产生等离子体的电位。 在形成等离子体之后，其被吸引并被捕获或镀在屏蔽件（62）上，防止气体等离子体着陆在基板材料（11）上或通过气体浇口。 本发明通过电离它们以形成等离子体并以永久的方式捕获等离子体离子来主动消除游离气体分子，从而减少气体通过气体门的反向扩散。

公开(公告)号：US4773944A

公开(公告)日：1988-09-27

申请号：US94357

申请日：1987-09-08

申请人： Prem Nath ,  Timothy Laarman ,  Craig Vogeli ,  Kenneth Whelan ,  Bernard Kelly

发明人： Prem Nath ,  Timothy Laarman ,  Craig Vogeli ,  Kenneth Whelan ,  Bernard Kelly

IPC分类号： H01L31/0392 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  B32B17/10788 ,  H01L31/03921 ,  H01L31/048 ,  H01L31/206 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： A large area, high current, low voltage photovoltaic module including a common bottom electrode upon which a means adapted to collect and transport photogenerated current is disposed. By electrically interconnecting a plurality of said large area modules in series, the voltage obtained therefrom can be added so as to obtain any desired voltage output therefrom.

摘要翻译： 一种大面积，高电流，低电压的光伏模块，其包括共同的底部电极，在其上设置适于收集和传送光生电流的装置。 通过将多个所述大面积模块串联电连接，可以添加从其获得的电压，从而获得任何所需的电压输出。

公开(公告)号：US4769682A

公开(公告)日：1988-09-06

申请号：US39888

申请日：1987-04-20

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： G03G5/082 ,  H01L21/205 ,  H01L31/20 ,  H01L29/167

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

摘要翻译： 改进的p型半导体合金膜，改进的基本上本征的非晶半导体合金膜，改进的光伏和光响应器件并入这种膜和r.f. 微波辉光放电方法。 改进的半导体合金膜优选至少包括通过辉光放电沉积的硅，所述化学物质至少包含硅和硼物质，当掺入到硅基质中时，它们基本保持单原子。 p型膜特别稳定，其特征在于非窄带隙，减小的体积应力，改善的形态，生长和粘附以及减少的剥离和开裂。 基本上本征的膜的特征在于显着降低了Staebler-Wronski降解。 该方法包括在辉光放电等离子体中引入不形成高级氢化硼或其它硼聚合物或低聚物的硼物质的新步骤。

公开(公告)号：US4756924A

公开(公告)日：1988-07-12

申请号：US850190

申请日：1986-04-10

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： G03G5/082 ,  H01L21/205 ,  B05D3/06 ,  B05D3/02

CPC分类号： G03G5/08214 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

摘要翻译： 一种用于沉积p掺杂半导体合金材料的微波辉光放电方法，该材料的特征在于将硼物质单原子和四面体结合到半导体主体基质中，由此提供了一种p掺杂的半导体合金材料，其特征在于减小的体系应变 减少了不希望的形态生长的成核，改善了对基材的粘附力，并减少了剥离和开裂。