公开(公告)号：US20120104469A1

公开(公告)日：2012-05-03

申请号：US12912963

申请日：2010-10-27

申请人： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

发明人： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/42368 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66606 ,  H01L29/78 ,  H01L29/7833

摘要： In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

摘要翻译： 在替代栅极方案中，连续材料层沉积在栅极腔中的底表面和侧壁表面上。 去除连续材料层的垂直部分以形成垂直部分不延伸到栅极腔的顶部的栅极部件。 栅组件可以用作栅极电介质或功函数金属部分，以形成增强替代栅极场效应晶体管的性能的栅极结构。

公开(公告)号：US08084346B1

公开(公告)日：2011-12-27

申请号：US12908016

申请日：2010-10-20

申请人： Dechao Guo ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jun Yuan

发明人： Dechao Guo ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jun Yuan

IPC分类号： H01L21/28

CPC分类号： H01L29/66545 ,  H01L21/2633 ,  H01L21/31105 ,  H01L29/6653

摘要： A method includes forming a dummy gate in a dielectric layer on a substrate, the dummy gate including a sacrificial oxide layer and a dummy gate body over the sacrificial oxide layer; removing the dummy gate body resulting in a gate opening with the sacrificial oxide layer in a bottom of the gate opening; performing an off-axis sputtering to create an angled entrance on the gate opening; removing the sacrificial oxide layer; and forming a replacement gate in the gate opening.

摘要翻译： 一种方法包括在基板上的电介质层中形成虚拟栅极，所述伪栅极包括在所述牺牲氧化物层上的牺牲氧化物层和虚设栅极; 在栅极开口的底部移除伪栅极体，导致栅极与牺牲氧化物层的开口; 执行离轴溅射以在门开口上形成成角度的入口; 去除牺牲氧化物层; 并在门开口中形成替换门。

公开(公告)号：US20110077280A1

公开(公告)日：2011-03-31

申请号：US12729940

申请日：2010-03-23

申请人： John A. Bender ,  Piyasena Hewawasam ,  John F. Kadow ,  Omar D. Lopez ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Gan Wang ,  Ningning Xu ,  Makonen Belema

发明人： John A. Bender ,  Piyasena Hewawasam ,  John F. Kadow ,  Omar D. Lopez ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Gan Wang ,  Ningning Xu ,  Makonen Belema

IPC分类号： A61K31/4178 ,  C07D403/14 ,  A61K31/4184 ,  C07D405/14 ,  A61P31/14

CPC分类号： C07D403/04 ,  C07D403/14 ,  C07D405/14

摘要： This disclosure concerns novel compounds of Formula (I) as defined in the specification and compositions comprising such novel compounds. These compounds are useful antiviral agents, especially in inhibiting the function of the NS5A protein encoded by Hepatitis C virus (HCV). Thus, the disclosure also concerns a method of treating HCV related diseases or conditions by use of these novel compounds or a composition comprising such novel compounds.

公开(公告)号：US20080299075A1

公开(公告)日：2008-12-04

申请号：US12029680

申请日：2008-02-12

申请人： Carol Bachand ,  Makonen Belema ,  Daniel H. Deon ,  Andrew C. Good ,  Jason Goodrich ,  Clint A. James ,  Rico Lavoie ,  Omar D. Lopez ,  Alain Martel ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Edward H. Ruediger ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Fukang Yang ,  David R. Langley ,  Gan Wang ,  Lawrence G. Hamann

发明人： Carol Bachand ,  Makonen Belema ,  Daniel H. Deon ,  Andrew C. Good ,  Jason Goodrich ,  Clint A. James ,  Rico Lavoie ,  Omar D. Lopez ,  Alain Martel ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Edward H. Ruediger ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Fukang Yang ,  David R. Langley ,  Gan Wang ,  Lawrence G. Hamann

IPC分类号： C07D403/14 ,  A61K31/4178 ,  A61K38/20 ,  A61K38/21 ,  A61K38/43 ,  A61K38/48 ,  A61K31/7088 ,  A61K38/16 ,  A61P31/12

CPC分类号： C07D403/14

摘要： The present disclosure relates to compounds, compositions and methods for the treatment of hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

摘要翻译： 本公开涉及用于治疗丙型肝炎病毒（HCV）感染的化合物，组合物和方法。 还公开了含有这些化合物的药物组合物和使用这些化合物治疗HCV感染的方法。

公开(公告)号：US5645991A

公开(公告)日：1997-07-08

申请号：US403582

申请日：1995-03-14

申请人： Claire M. Berg ,  Douglas E. Berg ,  Gan Wang

发明人： Claire M. Berg ,  Douglas E. Berg ,  Gan Wang

IPC分类号： C12N15/10 ,  C12N15/85 ,  C12N15/00

CPC分类号： C12N15/85 ,  C12N15/10 ,  C12N2800/90

摘要： The present invention discloses a rapid method of restriction mapping, sequencing or localizing genetic features in a segment of deoxyribonucleic acid (DNA) that is up to 42 kb in size. The method in part comprises cloning of the DNA segment in a specialized cloning vector and then isolating nested deletions in either direction in vivo by intramolecular transposition into the cloned DNA. A plasmid has been prepared and disclosed.

摘要翻译： 本发明公开了一种在高达42kb的脱氧核糖核酸（DNA）区段中的限制性作图，测序或定位遗传特征的快速方法。 该方法部分地包括将克隆的DNA段在专门的克隆载体中，然后通过分子内置换克隆的DNA中的任一方向在体内分离嵌套的缺失。 已经制备和公开了质粒。

公开(公告)号：US09252234B2

公开(公告)日：2016-02-02

申请号：US13605290

申请日：2012-09-06

申请人： Dechao Guo ,  Wilfried E. Haensch ,  Gan Wang ,  Yanfeng Wang ,  Xin Wang

发明人： Dechao Guo ,  Wilfried E. Haensch ,  Gan Wang ,  Yanfeng Wang ,  Xin Wang

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L29/739 ,  H01L29/165 ,  H01L21/425 ,  H01L29/16

CPC分类号： H01L29/66356 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7391

摘要： A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

摘要翻译： 公开了制造半导体器件的方法。 p型衬底被掺杂以在邻近衬底的阳极区域的p型衬底的选定部分中形成N阱。 p型掺杂区域形成在p型衬底的阳极区域中。 p型掺杂区域和N阱形成p-n结。

公开(公告)号：US08772149B2

公开(公告)日：2014-07-08

申请号：US13276395

申请日：2011-10-19

申请人： Eduard A. Cartier ,  Brian J. Greene ,  Dechao Guo ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong

发明人： Eduard A. Cartier ,  Brian J. Greene ,  Dechao Guo ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/785 ,  H01L21/02323 ,  H01L21/28017 ,  H01L27/1211 ,  H01L29/6656 ,  H01L29/66795

摘要： FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

摘要翻译： 公开了FinFET结构和制造FinFET结构的方法。 该方法包括在FinFET结构的栅极堆叠上执行氧退火处理以引起Vt偏移。 氧退火工艺在侧壁下拉和硅化后进行。

公开(公告)号：US20140065807A1

公开(公告)日：2014-03-06

申请号：US13605290

申请日：2012-09-06

申请人： Dechao Guo ,  Wilfried E. Haensch ,  Gan Wang ,  Yanfeng Wang ,  Xin Wang

发明人： Dechao Guo ,  Wilfried E. Haensch ,  Gan Wang ,  Yanfeng Wang ,  Xin Wang

IPC分类号： H01L21/265

CPC分类号： H01L29/66356 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7391

摘要： A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

公开(公告)号：US08592266B2

公开(公告)日：2013-11-26

申请号：US12912963

申请日：2010-10-27

申请人： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

发明人： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/42368 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66606 ,  H01L29/78 ,  H01L29/7833

摘要： In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

公开(公告)号：US08574563B2

公开(公告)日：2013-11-05

申请号：US13609957

申请日：2012-09-11

申请人： Carol Bachand ,  Makonen Belema ,  Daniel H. Deon ,  Andrew C. Good ,  Jason Goodrich ,  Clint A. James ,  Rico Lavoie ,  Omar D. Lopez ,  Alain Martel ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Edward H. Ruediger ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Fukang Yang ,  David R. Langley ,  Gan Wang ,  Lawrence G. Hamann

发明人： Carol Bachand ,  Makonen Belema ,  Daniel H. Deon ,  Andrew C. Good ,  Jason Goodrich ,  Clint A. James ,  Rico Lavoie ,  Omar D. Lopez ,  Alain Martel ,  Nicholas A. Meanwell ,  Van N. Nguyen ,  Jeffrey Lee Romine ,  Edward H. Ruediger ,  Lawrence B. Snyder ,  Denis R. St. Laurent ,  Fukang Yang ,  David R. Langley ,  Gan Wang ,  Lawrence G. Hamann

IPC分类号： C07D403/14 ,  C07D417/14 ,  C07D405/14 ,  C07D401/14 ,  A61K31/506 ,  A61K31/427 ,  A61K38/21 ,  A61K31/7056 ,  A61K31/7105 ,  A61K31/4745 ,  A61K38/20 ,  A61P31/16

CPC分类号： A61K31/506 ,  A61K31/13 ,  A61K31/4178 ,  A61K31/427 ,  A61K31/4745 ,  A61K31/7056 ,  A61K31/7105 ,  A61K38/2013 ,  A61K38/204 ,  A61K38/208 ,  A61K38/21 ,  A61K38/212 ,  C07D401/14 ,  C07D403/14 ,  C07D405/14 ,  C07D417/14

摘要： The present disclosure relates to compounds, compositions and methods for the treatment of hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.