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    Transposon-containing DNA cloning vector and uses thereof
    1.
    发明授权
    Transposon-containing DNA cloning vector and uses thereof 失效
    含有转座子的DNA克隆载体及其用途

    公开(公告)号：US5645991A

    公开(公告)日：1997-07-08

    申请号：US403582

    申请日：1995-03-14

    申请人： Claire M. Berg ,  Douglas E. Berg ,  Gan Wang

    发明人： Claire M. Berg ,  Douglas E. Berg ,  Gan Wang

    IPC分类号： C12N15/10 ,  C12N15/85 ,  C12N15/00

    CPC分类号： C12N15/85 ,  C12N15/10 ,  C12N2800/90

    摘要： The present invention discloses a rapid method of restriction mapping, sequencing or localizing genetic features in a segment of deoxyribonucleic acid (DNA) that is up to 42 kb in size. The method in part comprises cloning of the DNA segment in a specialized cloning vector and then isolating nested deletions in either direction in vivo by intramolecular transposition into the cloned DNA. A plasmid has been prepared and disclosed.

    摘要翻译： 本发明公开了一种在高达42kb的脱氧核糖核酸（DNA）区段中的限制性作图，测序或定位遗传特征的快速方法。 该方法部分地包括将克隆的DNA段在专门的克隆载体中，然后通过分子内置换克隆的DNA中的任一方向在体内分离嵌套的缺失。 已经制备和公开了质粒。

    FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE
    3.
    发明申请
    FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE 有权
    具有TRENCH植入的FET结构以提高反向通道泄漏和体电阻

    公开(公告)号：US20120086077A1

    公开(公告)日：2012-04-12

    申请号：US12899635

    申请日：2010-10-07

    申请人： DAVID M FRIED ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul C. Parries ,  Chengwen Pei ,  Gan Wang ,  Geng Wang ,  Yanli Zhang

    发明人： DAVID M FRIED ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul C. Parries ,  Chengwen Pei ,  Gan Wang ,  Geng Wang ,  Yanli Zhang

    IPC分类号： H01L29/06 ,  H01L21/336

    CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L27/1203 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7833

    摘要： An FET structure on a semiconductor substrate which includes forming recesses for a source and a drain of the gate structure on a semiconductor substrate, halo implanting regions through the bottom of the source and drain recesses, the halo implanted regions being underneath the gate stack, implanting junction butting at the bottom of the source and drain recesses, and filling the source and drain recesses with a doped epitaxial material. In exemplary embodiments, the semiconductor substrate is a semiconductor on insulator substrate including a semiconductor layer on a buried oxide layer. In exemplary embodiments, the junction butting and halo implanted regions are in contact with the buried oxide layer. In other exemplary embodiments, there is no junction butting. In exemplary embodiments, halo implants implanted to a lower part of the FET body underneath the gate structure provide higher doping level in lower part of the FET body to reduce body resistance, without interfering with FET threshold voltage.

    摘要翻译： 半导体衬底上的FET结构，其包括在半导体衬底上形成用于栅极结构的源极和漏极的凹槽，通过源极和漏极凹部的底部的晕圈注入区域，位于栅极叠层下方的晕圈注入区域，注入 在源极和漏极凹部的底部接合，并且用掺杂的外延材料填充源极和漏极凹部。 在示例性实施例中，半导体衬底是在掩埋氧化物层上包括半导体层的绝缘体上半导体衬底。 在示例性实施例中，接合对接和晕圈注入区域与掩埋氧化物层接触。 在其他示例性实施例中，没有接合对接。 在示例性实施例中，注入到栅极结构下面的FET体的下部的卤素注入在FET体的下部提供更高的掺杂水平，以降低体电阻，而不会干扰FET阈值电压。