公开(公告)号：US09071266B2

公开(公告)日：2015-06-30

申请号：US14151656

申请日：2014-01-09

Applicant: SK hynix memory solutions inc.

Inventor： Zheng Wu ,  Jason Bellorado ,  Marcus Marrow

IPC: H03M5/00 ,  H03M7/00 ,  H03M5/14 ,  H03M7/20

CPC classification number: H03M5/145 ,  H03M7/20 ,  H03M7/46

Abstract: An array f(n) is received for n=1, . . . , N where N is a length of a codeword. An array g(n) is received for n=1, . . . , N where N is a length of a codeword. Input data is encoded to satisfy an MTR constraint and a RLL constraint using the array f(n) and the array g(n).

Abstract translation: 对于n = 1，接收数组f（n）。 。 。 ，N，其中N是码字的长度。 对于n = 1，接收数组g（n）。 。 。 ，N，其中N是码字的长度。 使用阵列f（n）和阵列g（n）对输入数据进行编码以满足MTR约束和RLL约束。

公开(公告)号：US20150138894A1

公开(公告)日：2015-05-21

申请号：US14546545

申请日：2014-11-18

Applicant: SK hynix memory solutions inc.

Inventor： Xiangyu Tang ,  Lingqi Zeng ,  Jason Bellorado ,  Frederick K.H. Lee ,  Arunkumar Subramanian

IPC: G11C16/26

CPC classification number: G11C16/26

Abstract: A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.

Abstract translation: 使用被设置为默认电压的读取阈值电压的第一次迭代来执行读取以获得第一特性。 使用默认电压和偏移量产生读取阈值电压的第二次迭代。 使用读取阈值电压的第二次迭代执行读取以获得第二特性。 使用第一和第二特性产生读取阈值电压的第三次迭代。 使用读取阈值电压的第三次迭代执行读取以获得第三特性。 确定第三特性是否是最接近存储特性的两个特征之一。 如果是这样，则使用两个最接近的特性来产生读取阈值电压的第四次迭代。

公开(公告)号：US20150131376A1

公开(公告)日：2015-05-14

申请号：US14480988

申请日：2014-09-09

Applicant: SK hynix memory solutions inc.

Inventor： Christopher S. Tsang ,  Frederick K.H. Lee ,  Xiangyu Tang ,  Zheng Wu ,  Jason Bellorado

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C11/5642 ,  G11C16/26 ,  G11C16/3404

Abstract: A bit flip count is determined for each bin in a plurality of bins, including by: (1) performing a first read on a group of solid state storage cells at a first threshold that corresponds to a lower bound for a given bin and (2) performing a second read on the group of solid state storage cells at a second threshold that corresponds to an upper bound for the given bin. A minimum is determined using the bit flip counts corresponding to the plurality of bins and the minimum is used to estimate an optimal threshold.

Abstract translation: 包括通过以下步骤确定每个仓的位翻转计数：（1）在对应于给定仓的下限的第一阈值处对一组固态存储单元执行第一次读取，并且（2 ）在对应于给定仓的上限的第二阈值对所述固态存储单元组执行第二读取。 使用与多个箱相对应的位翻转计数来确定最小值，并且使用最小值来估计最佳阈值。

公开(公告)号：US20150078084A1

公开(公告)日：2015-03-19

申请号：US14550764

申请日：2014-11-21

Applicant: SK hynix memory solutions inc.

Inventor： Frederick K.H. Lee ,  Jason Bellorado ,  Arunkumar Subramanian ,  Lingqi Zeng ,  Xiangyu Tang ,  Ameen Aslam

IPC: G11C16/26 ,  G11C16/10

CPC classification number: G11C16/26 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/10 ,  G11C16/3404

Abstract: A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read.

Abstract translation: 读取固态存储器中的单元的第一位位置，其中使用第一位位置的读取获得排序位。 第一次读取单元的第二位位置，包括通过将与第二位位置相关联的第一读取阈值设置为第一值并将与第二位位置相关联的第二读取阈值设置为第二值。 第二次读取单元的第二位位置，包括通过将第一读取阈值设置为第三值并将第二读取阈值设置为第四值。 使用排序位，第一读取和第二读取生成第一读取阈值和第二读取阈值的新值。

公开(公告)号：US20150052419A1

公开(公告)日：2015-02-19

申请号：US14527618

申请日：2014-10-29

Applicant: SK hynix memory solutions inc.

Inventor： Naveen Kumar ,  Zheng Wu ,  Jason Bellorado ,  Lingqi Zeng ,  Marcus Marrow

IPC: H03M13/37 ,  H03M13/45 ,  G06F11/10

CPC classification number: H03M13/3784 ,  G06F11/1076 ,  H03M13/1111 ,  H03M13/2906 ,  H03M13/2957 ,  H03M13/4138 ,  H03M13/45 ,  H03M13/6325 ,  H03M13/6343 ,  H03M13/658

Abstract: A soft output detector is programmed with a first set of parameters. Soft information is generated according to the first set of parameters, including likelihood information that spans a maximum likelihood range. Error correction decoding is performed on the soft information generated according to the first set of parameters. In the event decoding is unsuccessful, the soft output detector is programmed with a second set of parameters, soft information according is generated to the second set of parameters (including likelihood information that is scaled down from the maximum likelihood range), and error correction decoding is performed on the soft information generated according to the second set of parameters.

Abstract translation: 软输出检测器用第一组参数编程。 软信息根据第一组参数生成，包括跨越最大似然范围的似然信息。 对根据第一组参数生成的软信息进行纠错解码。 在解码不成功的情况下，软输出检测器用第二组参数编程，根据第二组参数（包括从最大似然范围缩小的似然信息）生成软信息，以及纠错解码 根据第二组参数生成的软信息执行。

公开(公告)号：US08937838B2

公开(公告)日：2015-01-20

申请号：US13691113

申请日：2012-11-30

Applicant: SK hynix memory solutions inc.

Inventor： Xiangyu Tang ,  Lingqi Zeng ,  Jason Bellorado ,  Frederick K. H. Lee ,  Arunkumar Subramanian

IPC: G11C11/34 ,  G11C16/26

CPC classification number: G11C16/26

Abstract: An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value.

Abstract translation: 获得与固态存储中的存储值相关联的期望值以及三个或更多个点的集合，其中三个或更多个点包括电压和与存储值相关联的值。 从集合中选择具有最接近期望值的比率的两个点。 至少部分地基于所选择的两个点和期望值来确定电压。

公开(公告)号：US20140351672A1

公开(公告)日：2014-11-27

申请号：US14265249

申请日：2014-04-29

Applicant: SK hynix memory solutions inc.

Inventor： Marcus Marrow ,  Jason Bellorado ,  Zheng Wu ,  Naveen Kumar

IPC: G06F11/10

CPC classification number: H03M13/453 ,  G06F11/1012 ,  H03M13/152 ,  H03M13/2963 ,  H03M13/2975 ,  H03M13/3738 ,  H03M13/3784

Abstract: Miscorrection detection for error correction codes using bit reliabilities is disclosed, including: receiving a plurality of reliabilities corresponding to respective ones of a plurality of read values; receiving one or more proposed corrections corresponding to one or more of the plurality of read values; and determining a miscorrection metric based at least in part on one or more of the plurality of reliabilities corresponding to the one or more of the plurality of read values.

Abstract translation: 公开了使用位可靠性的错误校正码的误差检测，包括：接收与多个读取值中的相应数据相对应的多个可靠性; 接收对应于所述多个读取值中的一个或多个的一个或多个所提出的修正; 以及至少部分地基于与所述多个读取值中的一个或多个读取值对应的所述多个可靠性中的一个或多个来确定误差度量。