公开(公告)号：US10833251B2

公开(公告)日：2020-11-10

申请号：US16108316

申请日：2018-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Jin-Hye Bae ,  Hoon Han ,  Won-Jun Lee ,  Chang-Kyu Lee ,  Geun-Joo Baek ,  Jung-Ig Jeon

IPC: C11D7/50 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US10062837B2

公开(公告)日：2018-08-28

申请号：US15259198

申请日：2016-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Jin-Hye Bae ,  Hoon Han ,  Won-Jun Lee ,  Chang-Kyu Lee ,  Geun-Joo Baek ,  Jung-Ig Jeon

IPC: C11D11/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US09530670B2

公开(公告)日：2016-12-27

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/3213 ,  H01L29/423 ,  C09K13/04 ,  C23F1/26 ,  H01L21/321 ,  H01L27/115 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。