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1.发明授权公开(公告)号：US09530670B2
公开(公告)日：2016-12-27
申请号：US14492122
申请日：2014-09-22
发明人： Hoon Han , Byoung-Moon Yoon , Young-Taek Hong , Keon-Young Kim , Jun-Youl Yang , Young-Ok Kim , Tae-Heon Kim , Sun-Joong Song , Jung-Hun Lim , Jae-Wan Park , Jin-Uk Lee
IPC分类号： H01L21/20 , H01L21/36 , H01L21/3213 , H01L29/423 , C09K13/04 , C23F1/26 , H01L21/321 , H01L27/115 , H01L29/49 , H01L29/66 , H01L29/78
CPC分类号： H01L21/32133 , C09K13/04 , C23F1/26 , H01L21/32115 , H01L21/32134 , H01L27/11582 , H01L29/4236 , H01L29/4966 , H01L29/66666 , H01L29/7827
摘要： The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.
摘要翻译： 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。
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2.发明申请METHODS OF FORMING CONDUCTIVE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 有权形成导电图案的方法和使用该方法制造半导体器件的方法公开(公告)号：US20150200112A1
公开(公告)日：2015-07-16
申请号：US14492122
申请日：2014-09-22
发明人： Hoon Han , Byoung-Moon Yoon , Young-Taek Hong , Keon-Young Kim , Jun-Youl Yang , Young-Ok Kim , Tae-Heon Kim , Sun-Joong Song , Jung-Hun Lim , Jae-Wan Park , Jin-Uk Lee
IPC分类号： H01L21/3213 , H01L29/423 , C23F1/16 , H01L21/02
CPC分类号： H01L21/32133 , C09K13/04 , C23F1/26 , H01L21/32115 , H01L21/32134 , H01L27/11582 , H01L29/4236 , H01L29/4966 , H01L29/66666 , H01L29/7827
摘要： The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.
摘要翻译： 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。
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公开(公告)号：US10995269B2
公开(公告)日：2021-05-04
申请号：US15816699
申请日：2017-11-17
发明人： Jin-Woo Lee , Hoon Han , Keon-Young Kim , Jung-Hun Lim , Jin-Uk Lee , Jae-Wan Park
IPC分类号： C09K13/08 , H01L27/1157 , H01L21/311 , H01L27/11582 , C09K13/06
摘要： An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
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4.发明申请公开(公告)号：US20180142151A1
公开(公告)日：2018-05-24
申请号：US15816699
申请日：2017-11-17
发明人： Jin-Woo Lee , Hoon Han , Keon-Young Kim , Jung-Hun Lim , Jin-Uk Lee , Jae-Wan Park
IPC分类号： C09K13/08 , H01L21/311 , C09K13/06
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31111 , H01L27/1157 , H01L27/11582
摘要： An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
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