公开(公告)号：US20220190193A1

公开(公告)日：2022-06-16

申请号：US17479706

申请日：2021-09-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seogwoo HONG ,  Hyunjoon KIM ,  Joonyong PARK ,  Kyungwook HWANG ,  Junsik HWANG

IPC分类号： H01L33/00 ,  H01L25/075 ,  H01L21/683

摘要： A display transfer structure includes a base layer, a flexible barrier rib positioned on the base layer and having a plurality of holes therein, and a plurality of micro light emitting diodes (LEDs) positioned respectively in the plurality of holes. A method of manufacturing the display transfer structure includes forming a flexible barrier rib having holes on a base layer, supplying liquid to the holes, supplying micro LEDs to the liquid, and scanning the flexible barrier rib with an absorber capable of absorbing the liquid to align each of the micro LEDs in a respective hole such that electrodes of the micro LEDs face an outside of the holes.

公开(公告)号：US20220189810A1

公开(公告)日：2022-06-16

申请号：US17383012

申请日：2021-07-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Junsik HWANG

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01L25/075

摘要： A micro-semiconductor chip wet alignment apparatus is provided. The micro-semiconductor chip wet alignment apparatus includes a semiconductor chip wet supply module configured to supply the plurality of micro-semiconductor chips and a liquid onto the transfer substrate so that the plurality of micro-semiconductor chips are flowable on the transfer substrate; and a chip alignment module including an absorber capable of relative movement along a surface of the transfer substrate and configured to absorb the liquid so that the plurality of micro-semiconductor chips are aligned in the plurality of grooves.

公开(公告)号：US20220102602A1

公开(公告)日：2022-03-31

申请号：US17197357

申请日：2021-03-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG

IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L27/12

摘要： A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.

公开(公告)号：US20210397045A1

公开(公告)日：2021-12-23

申请号：US17128609

申请日：2020-12-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungwook HWANG ,  Junsik HWANG

IPC分类号： G02F1/1335 ,  G02F1/13357

摘要： Provided is a backlight unit configured to emit light to a liquid crystal display device including a plurality of pixels, the backlight unit including a substrate including a driving circuit, and a light source array including a plurality of micro light-emitting elements provided on the substrate, wherein a number of micro light-emitting elements is equal to or greater than a number of the plurality of pixels.

公开(公告)号：US20210249556A1

公开(公告)日：2021-08-12

申请号：US16933187

申请日：2020-07-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junsik HWANG ,  Kyungwook HWANG

IPC分类号： H01L33/00 ,  H01L33/24 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L25/075

摘要： A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.