公开(公告)号：US20230215979A1

公开(公告)日：2023-07-06

申请号：US17847637

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/38 ,  H01L33/44 ,  H01L25/075 ,  H01L27/15

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/44

Abstract: A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

公开(公告)号：US20230207725A1

公开(公告)日：2023-06-29

申请号：US18179003

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Kyungwook HWANG

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/0093 ,  H01L33/24 ,  H01L33/405 ,  H01L33/385 ,  H01L33/44 ,  H01L25/0753 ,  H01L33/007 ,  H01L2933/0016 ,  H01L33/32

Abstract: A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.

公开(公告)号：US20230197912A1

公开(公告)日：2023-06-22

申请号：US17991411

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Junsik HWANG

IPC: H01L33/50 ,  G02B5/08 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/505 ,  G02B5/08 ,  H01L25/0753 ,  H01L33/502 ,  H01L33/60 ,  H01L2933/0041

Abstract: Provided are a color conversion structure, a display apparatus, and a method of manufacturing a color conversion structure. The color conversion structure includes a bank structure including a groove, a color conversion layer accommodated in the groove, and a cover layer provided on the color conversion layer.

公开(公告)号：US20230133466A1

公开(公告)日：2023-05-04

申请号：US17729769

申请日：2022-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Kyungwook Hwang ,  Seogwoo Hong

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/24 ,  H01L27/15 ,  H01L33/62 ,  H01L33/50

Abstract: A micro light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer arranged on an upper surface of the first semiconductor layer, a second semiconductor layer arranged on an upper surface of the light emitting layer and doped with a second conductivity type electrically opposite to the first conductivity type, an insulating layer arranged on an upper surface of the second semiconductor layer, a first electrode arranged on an upper surface of the insulating layer and electrically connected to the first semiconductor layer, a second electrode arranged on the upper surface of the insulating layer and electrically connected to the second semiconductor layer, and an aluminum nitride layer arranged on a lower surface of the first semiconductor layer and having a flat surface.

公开(公告)号：US20220344533A1

公开(公告)日：2022-10-27

申请号：US17550851

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Kyungwook HWANG ,  Dongho KIM ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG

IPC: H01L33/00

Abstract: A multi-use transfer mold and a method of manufacturing a display apparatus are provided. The multi-use transfer mold includes a transfer substrate and a plurality of grooves provided in the transfer substrate, wherein each of the grooves includes a transfer area for accommodating a transfer micro-light-emitting device and a preliminary area for accommodating a preliminary micro-light-emitting device, wherein the preliminary area is connected to the transfer area.

公开(公告)号：US20220293669A1

公开(公告)日：2022-09-15

申请号：US17525587

申请日：2021-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/50 ,  H01L33/58

Abstract: A display apparatus includes a driving substrate including a plurality of grooves, micro light-emitting devices provided in the plurality of grooves and configured to emit light of a first color, and a color conversion layer provided on the micro light-emitting devices and configured to convert the light of the first color into light of at least one second color, wherein the color conversion layer includes light blocking patterns spaced apart from the micro light-emitting devices and spaced apart from each other on a same plane, a nano-porous layer provided between adjacent ones of the light blocking patterns, spaced apart from the micro light-emitting devices, and including a plurality of nano-pores, and quantum dots impregnated in the nano-porous layer and configured to convert the light of the first color into the light of the at least one second color.

公开(公告)号：US20220216368A1

公开(公告)日：2022-07-07

申请号：US17527366

申请日：2021-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Ho Won JANG ,  Junsik HWANG ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40

Abstract: Provided are a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a substrate, a membrane bridge that defines, with the substrate, a plurality of cavities, and a nitride semiconductor layer arranged on the membrane bridge. The membrane bridge and the substrate have the same crystal structure. The membrane bridge has an upper surface with a constant height with respect to a surface of the substrate.

公开(公告)号：US20220190193A1

公开(公告)日：2022-06-16

申请号：US17479706

申请日：2021-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Hyunjoon KIM ,  Joonyong PARK ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/00 ,  H01L25/075 ,  H01L21/683

Abstract: A display transfer structure includes a base layer, a flexible barrier rib positioned on the base layer and having a plurality of holes therein, and a plurality of micro light emitting diodes (LEDs) positioned respectively in the plurality of holes. A method of manufacturing the display transfer structure includes forming a flexible barrier rib having holes on a base layer, supplying liquid to the holes, supplying micro LEDs to the liquid, and scanning the flexible barrier rib with an absorber capable of absorbing the liquid to align each of the micro LEDs in a respective hole such that electrodes of the micro LEDs face an outside of the holes.

公开(公告)号：US20220189810A1

公开(公告)日：2022-06-16

申请号：US17383012

申请日：2021-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Junsik HWANG

IPC: H01L21/68 ,  H01L21/683 ,  H01L25/075

Abstract: A micro-semiconductor chip wet alignment apparatus is provided. The micro-semiconductor chip wet alignment apparatus includes a semiconductor chip wet supply module configured to supply the plurality of micro-semiconductor chips and a liquid onto the transfer substrate so that the plurality of micro-semiconductor chips are flowable on the transfer substrate; and a chip alignment module including an absorber capable of relative movement along a surface of the transfer substrate and configured to absorb the liquid so that the plurality of micro-semiconductor chips are aligned in the plurality of grooves.

公开(公告)号：US20220102602A1

公开(公告)日：2022-03-31

申请号：US17197357

申请日：2021-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12

Abstract: A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.