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    Plasma processing apparatus and a plasma processing method
    54.
    发明申请
    Plasma processing apparatus and a plasma processing method 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20060157449A1

    公开(公告)日：2006-07-20

    申请号：US11348300

    申请日：2006-02-07

    申请人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

    发明人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

    IPC分类号： G01L21/30 ,  C23F1/00

    CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/32678 ,  H01L21/31116

    摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

    摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3 N，CF 2，CF和F的合适比例的等离子体，并且存在的问题是， 特性根据蚀刻室的温度波动而波动。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的 可以获得蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。

    Telescope main body and spotting scope
    57.
    发明申请
    Telescope main body and spotting scope 失效
    望远镜主体和探测范围

    公开(公告)号：US20050099684A1

    公开(公告)日：2005-05-12

    申请号：US10981788

    申请日：2004-11-05

    申请人： Makoto Mogamiya ,  Toshio Masuda

    发明人： Makoto Mogamiya ,  Toshio Masuda

    IPC分类号： G02B23/06 ,  G02B7/08 ,  G02B7/28 ,  G02B7/36 ,  G02B17/04 ,  G02B23/00 ,  G02B23/12 ,  H04N5/225 ,  H04N5/232

    CPC分类号： G02B7/08 ,  G02B17/04 ,  G02B23/12 ,  H04N5/2254 ,  H04N5/23212 ,  H04N5/23293

    摘要： A telescope main body, which is provided with an objective optical system, a focusing system, an imaging device, a beam splitter, and a correcting system that performs a correcting operation for correcting a position shift between an image forming position of an object image and a receiving surface of the imaging device caused by diopter variation of a user. The correcting system includes a focus driving system which relatively moves an image forming position of the object image with respect to the receiving surface, a focus detecting system which detects a status in which the image forming position coincides with the receiving surface, and a controller controlling the focus driving system. The controller has with a learning function of storing correction data of a preceding correcting operation so that the stored correction data of the preceding correcting operation is reflected in a subsequent correction operation.

    摘要翻译： 设置有物镜光学系统的望远镜主体，聚焦系统，成像装置，分束器和校正系统，其执行用于校正物体图像的图像形成位置与图像形成位置之间的位置偏移的校正操作 由用户的屈光度变化引起的成像装置的接收表面。 校正系统包括：相对于接收表面相对地移动对象图像的图像形成位置的对焦驱动系统;检测图像形成位置与接收面重合的状态的焦点检测系统;以及控制器 重点驱动系统。 控制器具有存储先前校正操作的校正数据的学习功能，使得存储的校正操作的校正数据反映在随后的校正操作中。

    Disturbance-free, recipe-controlled plasma processing system and method
    58.
    发明申请
    Disturbance-free, recipe-controlled plasma processing system and method 审中-公开
    无干扰，配方控制等离子体处理系统和方法

    公开(公告)号：US20050022932A1

    公开(公告)日：2005-02-03

    申请号：US10933413

    申请日：2004-09-03

    申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  C23F1/00

    CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

    摘要： A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

    摘要翻译： 一种用于等离子体处理装置的等离子体处理控制系统，其具有用于对容纳在真空处理室内的样品进行等离子体处理操作的等离子体处理装置，用于在处理操作期间监视处理参数的传感器，用于提供处理结果估计的单元 模型，其基于来自传感器的监视输出和预设处理结果估计方程来估计处理结果;单元，用于提供最佳配方计算模型，其计算对处理条件的校正，使得处理结果变为目标值 基于处理结果估计模型的估计结果，以及用于使处理装置根据从最佳配方计算模型生成的配方在下一个处理步骤中的最佳处理条件下处理样本的单元 。

    Plasma etching apparatus and plasma etching method
    59.
    发明授权
    Plasma etching apparatus and plasma etching method 失效
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US06815365B2

    公开(公告)日：2004-11-09

    申请号：US09983946

    申请日：2001-10-26

    申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    IPC分类号： H01L21302

    CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

    摘要翻译： 一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量 房间。 等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序 在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。

    Maintenance method and system for plasma processing apparatus etching and apparatus
    60.
    发明授权
    Maintenance method and system for plasma processing apparatus etching and apparatus 有权
    等离子体处理设备蚀刻和设备的维护方法和系统

    公开(公告)号：US06745096B2

    公开(公告)日：2004-06-01

    申请号：US09946621

    申请日：2001-09-06

    申请人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

    发明人： Hideyuki Yamamoto ,  Toshio Masuda ,  Shoji Ikuhara ,  Akira Kagoshima ,  Junichi Tanaka

    IPC分类号： G06F1900

    CPC分类号： H01J37/32862 ,  H01J37/32935

    摘要： For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

    摘要翻译： 为了在通过使用等离子体处理真空处理室中的样品的等离子体处理装置进行湿式清洗之后进行维护，当对真空处理室构成的构件进行湿式清洗之后的恢复处理是在对大气开放的真空处理室的情况下进行的， 根据设备固有的预定最佳顺序，自动或半自动判断恢复处理是否合适，根据结果自动或半自动地开始下一个处理。