利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

72 条记录 (耗时 0.04 秒)

    Apparatus for the growth of semiconductor crystals
    53.
    发明授权
    Apparatus for the growth of semiconductor crystals 失效
    用于半导体晶体生长的装置

    公开(公告)号：US4693207A

    公开(公告)日：1987-09-15

    申请号：US805517

    申请日：1985-12-06

    申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto

    发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto

    IPC分类号： H01L21/203 ,  C30B23/06 ,  H01L21/26 ,  C23C16/00

    CPC分类号： C30B23/06

    摘要： An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.

    摘要翻译： 一种用于生长半导体晶体的装置，其中在高真空中在分子束外延生长室内的衬底上在衬底上分子束照射包含元素的半导体晶体的表面，由此实现分子束外延生长 其中所述分子束外延生长室包括光学窗口，通过该光学窗口将光引入所述生长室并在分子束外延生长期间照射所述衬底的表面。

    Method of producing a semiconductor laser device
    54.
    发明授权
    Method of producing a semiconductor laser device 失效
    半导体激光器件的制造方法

    公开(公告)号：US4567060A

    公开(公告)日：1986-01-28

    申请号：US671951

    申请日：1984-11-16

    申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Saburo Yamamoto

    发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01L33/20 ,  H01L33/0062 ,  H01S5/2231 ,  Y10S148/05 ,  Y10S148/095

    摘要： A method of producing a semiconductor laser device, comprisingdepositing a first cladding layer, an active layer, and a second cladding layer successively, which three layers having heterojunctions each between neighboring two layers, said first and second cladding layers being made of mixed crystals of a semiconductor material composing the active layer and another semiconductor material containing aluminum,depositing a fourth thin semiconductor layer on the second cladding layer, said fourth layer being made of material not including aluminum, and having charge carriers of the same type with that of the second cladding layer,depositing a fifth semiconductor layer on said fourth layer, said fifth semiconductor layer having charge carriers of the type opposite to that of the second cladding layer,forming a stripe-like groove by etching in said fifth semiconductor layer down to said fourth semiconductor layer, anddepositing a sixth semiconductor layer on said fifth semiconductor layer and on said groove, said sixth layer having charge carriers of the same type with that of the second cladding layer.

    摘要翻译： 一种制造半导体激光器件的方法，包括依次沉积第一包层，有源层和第二覆层，所述第三和第二覆层在相邻的两层之间具有异质结，所述第一和第二覆层由 构成有源层的半导体材料和含有铝的另一半导体材料，在第二覆层上沉积第四薄膜半导体层，所述第四层由不包括铝的材料制成，并且具有与第二覆层相同类型的电荷载流子 在所述第四层上沉积第五半导体层，所述第五半导体层具有与所述第二覆层的类型相反的电荷载流子，通过在所述第五半导体层中蚀刻形成条状沟槽到所述第四半导体层 层，并且在所述第五半导体1a上沉积第六半导体层 并且在所述槽上，所述第六层具有与第二覆层相同类型的电荷载流子。

    Immunostimulatory oligonucleotide that induces interferon alpha
    55.
    发明授权
    Immunostimulatory oligonucleotide that induces interferon alpha 有权
    诱导干扰素α的免疫刺激性寡核苷酸

    公开(公告)号：US07718623B2

    公开(公告)日：2010-05-18

    申请号：US10590761

    申请日：2005-02-25

    申请人： Harukazu Kitagawa ,  Sumiko Iho ,  Takasumi Matsuki ,  Saburo Yamamoto

    发明人： Harukazu Kitagawa ,  Sumiko Iho ,  Takasumi Matsuki ,  Saburo Yamamoto

    IPC分类号： A01N43/04 ,  A61K31/70 ,  C07H21/04 ,  A61K39/38

    CPC分类号： A61K45/06 ,  A61K39/39 ,  A61K2039/55561

    摘要： An immunostimulatory oligonucleotide that is represented by the general formula 5′-Gm-GACGATCGTC-Gn-3′ or 5′-Gm-CACGATCGTG-Gn-3′ (in the formula, m and n are each independently an integer from 1 to 9 and m+n=10) and that comprises any of the following base sequences: GGACGATCGTCGGGGGGGGG (SEQ. ID. NO.: 1), GGGACGATCGTCGGGGGGGG (SEQ. ID. NO.: 2), GGGGACGATCGTCGGGGGGG (SEQ. ID. NO.: 3), GGGGGGGACGATCGTCGGGG (SEQ ID NO: 4), GGGGGGGGACGATCGTCGGG (SEQ. ID. NO.: 5), GGGGGGGGGACGATCGTCGG (SEQ. ID. NO.: 6), GGGGGGGGGGACGATCGTCG (SEQ. ID. NO.: 7), and GGGGGGGGGCACGATCGTGG (SEQ. ID. NO.: 8).

    摘要翻译： 由通式5'-Gm-GACGATCGTC-Gn-3'或5'-Gm-CACGATCGTG-Gn-3'表示的免疫刺激性寡核苷酸（式中，m和n各自独立地为1〜9的整数 和m + n = 10），并且其包含以下任何碱基序列：GGACGATCGTCGGGGGGGGGG（SEQ ID NO：1），GGGACGATCGTCGGGGGGGGG（SEQ ID NO：2），GGGGACGATCGTCGGGGGGGG（SEQ ID NO： 3），GGGGGGGACGATCGTCGGGG（SEQ ID NO：4），GGGGGGGGGACGATCGTCGGG（SEQ.ID.NO:5），GGGGGGGGGGACGATCGTCGG（SEQ.ID.NO:6），GGGGGGGGGGGACGATCGTCG（SEQ.ID.NO:7）和GGGGGGGGGGCACGATCGTGG （SEQ ID NO：8）。

    Semiconductor laser device with a protective film on the facets
    57.
    发明授权
    Semiconductor laser device with a protective film on the facets 失效
    具有保护膜的半导体激光器件

    公开(公告)号：US4951291A

    公开(公告)日：1990-08-21

    申请号：US336649

    申请日：1989-04-07

    申请人： Nobuyuki Miyauchi ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Nobuyuki Miyauchi ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/028

    CPC分类号： H01S5/028

    摘要： A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a dielectric film of high refractive index, said multi-layered dielectric film which covers at least one of the facets therewith being a light-permeable film with a reflectivity of 30% or less.

    摘要翻译： 一种在面上具有保护膜的半导体激光器件，其中所述保护膜由由至少两种电介质膜组成的交替层组成的多层电介质膜制成，其中一层是低折射率的第一介电膜 指数，另一个是高折射率的电介质膜，所述多层电介质膜覆盖其中至少一个面是具有30％或更小反射率的透光膜。

    Semiconductor laser device
    58.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4868838A

    公开(公告)日：1989-09-19

    申请号：US105945

    申请日：1987-10-07

    申请人： Saburo Yamamoto

    发明人： Saburo Yamamoto

    IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/1064 ,  H01S5/2275

    摘要： A semiconductor laser device with a stripe-channeled substrate and an active layer for laser oscillation disposed over the substrate comprising an optical waveguide; a striped mesa that is formed by the removal of the portions corresponding to the outside of said optical waveguide; and a multi-layered crystal that is grown into said removed portions, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction, and a method for the production thereof comprising epitaxially growing a multi-layered crystal containing the active layer on a grown crystal that includes the stripe-channeled substrate; forming a striped mesa on the portion corresponding to said striped channel by the removal of the portions at both sides of said striped channel; and epitaxially growing a multi-layered crystal outside of said striped mesa, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction.

    摘要翻译： 一种半导体激光器件，其具有条形沟道基片和激光振荡用活性层，其设置在包括光波导的基底上; 通过去除与所述光波导的外部相对应的部分形成的条状台面; 以及生长到所述去除部分中的多层晶体，所述多层晶体包括多个掩埋层并且包含pin-pp-n-或pn-n-反向偏压接合部，以及用于生产的方法 其包括在包括条形沟槽基底的生长晶体上外延生长含有活性层的多层晶体; 通过去除所述条纹通道的两侧的部分，在对应于所述条纹通道的部分上形成条状台面; 并且在所述条状台面外部外延生长多层晶体，所述多层晶体包括多个掩埋层并且包含pin-pp-n-或pn-n-反向偏压结。

    Semiconductor laser
    59.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4835783A

    公开(公告)日：1989-05-30

    申请号：US41483

    申请日：1987-04-23

    申请人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    发明人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

    CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/2202 ,  H01S5/3428 ,  H01S5/3432

    摘要： A semiconductor device is formed by sequentially forming a first clad layer, active layer, second clad layer, and cap layer from, for example, an AlGaAs layer with an AlAs mixing ratio of .gtoreq.0.4, on a substrate made of GaAs or the like by MBE, MOCVD or another high precision growth process. Then AlGaAs layer is selectively removed only in the vicinity of formed ridges, and in this part, grooves on two stripes are formed from the cap layer surface, leaving the second clad layer with an intact thickness of, for example, only 3000 .ANG.. An insulation layer made of, for example, SiN is then formed in the groove area and the AlGaAs layer region, thereby creating a current stripe structure, in which only two grooves provide for current passages, that is, the light-emitting regions. In this structure, the thickness of the mesa pattern (ridge part) between the two grooves may be a minimum limit and the processing precision may be improved, while by properly selecting the thickness of the AlGaAs layer, a sufficiently large distance may be set between the mount surface and the active layer, so that the problem of solder climbing-up along the device end surface may be prevented. When the AlAs mixing ratio is controlled at 0.4 in the AlGaAs layer, it is possible to easily remove portions thereof selectively, by using hydrogen fluoride.

    摘要翻译： 半导体器件通过从例如AlAs混合比为> / = 0.4的AlGaAs层顺序地形成第一覆盖层，有源层，第二覆盖层和覆盖层而形成，所述AlGaAs层在由GaAs制成的衬底上或 像MBE，MOCVD或另一个高精度增长过程。 然后，仅在形成的脊的附近选择性地除去AlGaAs层，并且在该部分中，由盖层表面形成两个条纹上的槽，留下第二覆层的完整厚度例如仅为3000安。 然后在沟槽区域和AlGaAs层区域中形成例如由SiN制成的绝缘层，从而产生电流条纹结构，其中只有两个沟槽提供电流通路，即发光区域。 在这种结构中，两个槽之间的台面图案（脊部）的厚度可以是最小限度，并且可以提高加工精度，而通过适当地选择AlGaAs层的厚度，可以设置足够大的距离 安装表面和有源层，从而可以防止沿着器件端面向上爬焊的问题。 当在AlGaAs层中AlAs混合比控制在0.4时，可以通过使用氟化氢来选择性地容易地去除它们的部分。