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公开(公告)号：US4899349A
公开(公告)日：1990-02-06
申请号：US285342
申请日：1988-12-14
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/32316
摘要： A double-heterostructure multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation. A striped etching-protective thin layer is formed on the double-heterostructure multilayered crystal. A striped-mesa multilayered crystal is formed on the striped etching-protective thin layer. A burying layer is formed on the double-heterostructure multilayered crystal outside of both the striped thin layer and striped-mesa multilayered crystal. This provides refractive index distributions within the active layer corresponding to the inside and the outside of the striped-mesa multilayered crystal. Further, it provides a striped structure which functions as a current path composed of the striped-mesa multilayered crystal.
摘要翻译： 半导体激光器件中的双异质结构多层晶体结构包含用于激光振荡的有源层。 在双异质结构多层晶体上形成条纹蚀刻保护薄层。 在条纹蚀刻保护薄层上形成条状台面多层晶体。 在条纹薄层和条纹 - 台面多层晶体之外的双异质结构多层晶体上形成掩埋层。 这提供了对应于条状台面多层晶体的内部和外部的有源层内的折射率分布。 此外，它提供了条纹结构，其作为由条状台面多层晶体组成的电流路径。
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公开(公告)号：US4807235A
公开(公告)日：1989-02-21
申请号：US905516
申请日：1986-09-09
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/16 , H01S5/227 , H01S3/19
CPC分类号： H01S5/10 , H01S5/0422 , H01S5/164 , H01S5/0202 , H01S5/0281 , H01S5/0425 , H01S5/0602 , H01S5/2275
摘要： A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.
摘要翻译： 一种半导体激光器件，包括含有用于激光振荡的有源区的多层半导体晶体，其中与所述器件的选定值的宽度相邻的一个面的两侧相邻的所述有源区的延伸部分构成吸光 在高次横模中的光被吸收到比基本横向模式更大程度地吸收的区域，从而实现高达高输出功率的稳定的基本横模的激光振荡。
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公开(公告)号：US4841533A
公开(公告)日：1989-06-20
申请号：US920585
申请日：1986-10-17
IPC分类号： H01L21/203 , H01S5/00 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al.sub.x Ga.sub.1-x As (0
摘要翻译： 一种包含激光振荡操作区域的半导体激光器件，包括由Al x Ga 1-x As（0
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公开(公告)号：US4745612A
公开(公告)日：1988-05-17
申请号：US884554
申请日：1986-07-11
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/3432
摘要： The laser device has an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.3) quantum well active region having a thickness of 200 angstroms or less. Al.sub.y Ga.sub.1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al.sub.z Ga.sub.1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al.sub.w Ga.sub.1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.
摘要翻译： 激光器件具有厚度为200埃或更小的Al x Ga 1-x As（x> / = 0.3）量子阱有源区。 Al y Ga 1-y As（y> x）载流子供应层夹在其间的量子阱活性区域。 在每个载体供给层上设置AlzGa1-zAs（z> y）包覆层。 最后，在每个载流子供给层和每个包覆层之间设置AlwGa1-wAs（w> z）阻挡层。
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公开(公告)号：US4769822A
公开(公告)日：1988-09-06
申请号：US910530
申请日：1986-09-23
CPC分类号： H01S5/12 , H01S5/1237 , H01S5/2059 , H01S5/2231 , H01S5/3428
摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.
摘要翻译： 一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域 除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层 和第二覆层。
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公开(公告)号：US4737959A
公开(公告)日：1988-04-12
申请号：US772789
申请日：1985-09-05
CPC分类号： H01S5/4031 , H01S5/223
摘要： A semiconductor laser array device comprising a substrate having a plurality of adjacent striped channels on its surface, and a plurality of laser operation areas each of which contains a cladding layer, an active layer and another cladding layer which have been successively formed on the surface of said substrate by molecular beam epitaxy or metal organic chemical vapor deposition in such a manner that the surface of each of these layers becomes parallel to the surface of said substrate.
摘要翻译： 一种半导体激光器阵列器件，包括在其表面上具有多个相邻条纹沟道的衬底，以及多个激光器操作区域，每个激光器操作区域包含已经依次形成在表面上的覆层，有源层和另一覆层 所述衬底通过分子束外延或金属有机化学气相沉积，使得这些层中的每一层的表面平行于所述衬底的表面。
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公开(公告)号：US4860297A
公开(公告)日：1989-08-22
申请号：US81403
申请日：1987-08-04
CPC分类号： B82Y20/00 , H01S5/34326
摘要： In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y
摘要翻译： 在包括In（Ga1-xAlx）P包覆层和具有一个或多个In（Ga1-yAly）P（y
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公开(公告)号：US4824518A
公开(公告)日：1989-04-25
申请号：US843146
申请日：1986-03-24
IPC分类号： H01L21/203 , H01L21/263 , H01L21/324 , H01L21/20
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01L21/02661 , H01L21/3245 , Y10S148/017 , Y10S148/025 , Y10S148/169 , Y10S438/974
摘要： A method for the production of semiconductor devices comprising: subjecting a GaAs substrate with an oxidized film thereon to a degasification treatment, heating the substrate during a radiation treatment by a molecular beam within a pre-treatment chamber to remove the oxidized film from the substrate, and growing a phosphorous compound semiconductor layer on the substrate by molecular beam epitaxy within a growth chamber connected to the pre-treatment chamber.
摘要翻译： 一种制造半导体器件的方法，其特征在于，包括：对其上的氧化膜的GaAs衬底进行脱气处理，在通过预处理室内的分子束进行放射线处理期间加热衬底以从衬底去除氧化膜， 以及通过分子束外延在连接到预处理室的生长室内在衬底上生长磷化合物半导体层。
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公开(公告)号：US4806994A
公开(公告)日：1989-02-21
申请号：US73854
申请日：1987-07-14
IPC分类号： H05B41/42 , H01L29/15 , H01S5/343 , H01L27/12 , H01L29/161
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/34313 , H01S5/3432
摘要： A semiconductor device having a superlattice composed of two kinds of semiconductor materials, wherein the lattice unit of said superlattice is composed of periodically laminated layers consisting of four or more kinds of thin layers which are different from each other in the combination of materials and thickness.
摘要翻译： 一种具有由两种半导体材料组成的超晶格的半导体器件，其中所述超晶格的晶格单元由在材料和厚度的组合中彼此不同的四种或更多种薄层构成的周期性层叠层构成。
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公开(公告)号：US4787089A
公开(公告)日：1988-11-22
申请号：US12702
申请日：1987-02-09
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0
摘要翻译： 一种半导体激光器件，包括由超薄结构形成的单个或多个量子阱区域，所述超晶格结构由由薄GaAs层和薄Al x Ga 1-x As（0
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