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70 条记录 (耗时 0.04 秒)

    Abatement of fluorine gas from effluent
    53.
    发明授权
    Abatement of fluorine gas from effluent 失效
    从排出物中减少氟气

    公开(公告)号：US06468490B1

    公开(公告)日：2002-10-22

    申请号：US09607918

    申请日：2000-06-29

    申请人： Shamouil Shamouilian ,  Mehran Moalem ,  Tony S. Kaushal

    发明人： Shamouil Shamouilian ,  Mehran Moalem ,  Tony S. Kaushal

    IPC分类号： B01D5368

    CPC分类号： C23C16/4412 ,  B01D53/75 ,  B01D53/8659 ,  B01D53/8662

    摘要： An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

    摘要翻译： 可用于消除从处理室35排出的流出物（例如来自CVD室清洁过程）的二氧化碳气体含量的流出物消除系统200包括催化反应器250，以减少流出物100中的F2含量。系统 可以进一步包括预催化剂230以在催化反应器250中处理之前向流出物100中添加反应性气体和/或处理流出物100.可以通过气体源220将反应性气体加入到流出物100中。

    Process chamber having improved temperature control
    54.
    发明授权
    Process chamber having improved temperature control 失效
    处理室具有改进的温度控制

    公开(公告)号：US06440221B2

    公开(公告)日：2002-08-27

    申请号：US09082430

    申请日：1998-05-20

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

    IPC分类号： C23C1600

    CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/6831

    摘要： A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.

    摘要翻译： 温度控制系统145用于在半导体衬底70的加工期间控制处理室25的温度。温度控制系统145包括用于从腔室25除去热量的热交换器板155和用于 向热交换器板155传导热量。传热构件158包括结合到室25的外表面的下导热表面205和热耦合到热交换器板155的上传热表面210.优选地， 温度控制组件包括用于加热室25的加热器150和用于调节由热交换器板155移除的热量的计算机控制系统165以及由加热器150供应的热量，以将室25保持在基本均匀的温度 。

    Electrostatic chuck having a plurality of gas inlet channels
    55.
    发明授权
    Electrostatic chuck having a plurality of gas inlet channels 有权
    具有多个气体入口通道的静电吸盘

    公开(公告)号：US06370006B1

    公开(公告)日：2002-04-09

    申请号：US09506423

    申请日：2000-02-17

    申请人： Ananda H. Kumar ,  Kadthala Narendrnath ,  Shamouil Shamouilian

    发明人： Ananda H. Kumar ,  Kadthala Narendrnath ,  Shamouil Shamouilian

    IPC分类号： H02N1300

    CPC分类号： H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck and a process of manufacturing an electrostatic chuck for supporting a semiconductor wafer during wafer processing and for providing a plurality of gas inlet channels extending through the chuck and through which thermal transfer gas can be supplied to the back side of the wafer to enhance the thermal transfer between the wafer and the chuck, embedding a plurality of inserts in a ceramic electrostatic chuck, each insert comprising a matrix of the ceramic of which the electrostatic chuck is made and a plurality of removable elongate members, and removing the elongate members to form a plurality of elongate holes providing the plurality of gas inlet channels.

    摘要翻译： 一种静电卡盘和制造用于在晶片加工期间支撑半导体晶片的静电卡盘的工艺，以及用于提供延伸穿过卡盘的多个气体入口通道，并且热传递气体可以通过该导入通道提供到晶片的背面以增强 在晶片和卡盘之间的热传递，将多个插入件嵌入陶瓷静电卡盘中，每个插入件包括其上形成有静电卡盘的陶瓷基体和多个可移除的细长构件，并且将细长构件移除到 形成多个提供多个气体入口通道的细长孔。

    Stand-off pad for supporting a wafer on a substrate support chuck
    56.
    发明授权
    Stand-off pad for supporting a wafer on a substrate support chuck 失效
    用于在基板支撑卡盘上支撑晶片的支撑垫

    公开(公告)号：US06217655B1

    公开(公告)日：2001-04-17

    申请号：US08791941

    申请日：1997-01-31

    申请人： Ananda H. Kumar ,  Shamouil Shamouilian ,  Hyman J. Levinstein ,  Vijay Parkhe

    发明人： Ananda H. Kumar ,  Shamouil Shamouilian ,  Hyman J. Levinstein ,  Vijay Parkhe

    IPC分类号： B05C1300

    CPC分类号： H01L21/6833 ,  H01L21/6875

    摘要： A stand-off pad, and method of fabricating the same, for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer stand-off pad is fabricated of a polymeric material, such as polyimide, which is disposed upon the support surface of the chuck. The stand-off pad maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the stand-off pad. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing and the magnitude of the chucking voltage is maintained between the workpiece and the chuck.

    摘要翻译： 支撑垫及其制造方法，用于以与工件支撑卡盘间隔开的关系支撑工件。 更具体地说，晶片支座由诸如聚酰亚胺的聚合材料制成，其设置在卡盘的支撑表面上。 支座将保持晶片或其它工件与卡盘的支撑表面间隔开。 晶片的下表面和卡盘之间的距离由支座的厚度限定。 该距离应大于可能位于卡盘表面上的污染物颗粒的预期直径。 以这种方式，污染物颗粒在处理期间不粘附到晶片的下侧，并且夹持电压的幅度保持在工件和卡盘之间。

    Electrostatic chuck with conformal insulator film
    58.
    发明授权
    Electrostatic chuck with conformal insulator film 失效
    带保形绝缘膜的静电吸盘

    公开(公告)号：US5745331A

    公开(公告)日：1998-04-28

    申请号：US381786

    申请日：1995-01-31

    申请人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    发明人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.

    摘要翻译： 用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂 衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。 基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。 绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中 所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。 优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。