公开(公告)号：US20110018651A1

公开(公告)日：2011-01-27

申请号：US12922702

申请日：2009-03-09

申请人： Taro Ikeda ,  Shigeru Kasai

发明人： Taro Ikeda ,  Shigeru Kasai

IPC分类号： H01P5/18

CPC分类号： H01P5/12 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46

摘要： A power combiner 100 comprises a tubular main container 1, a plurality of power introduction ports 2 provided on the lateral surface of the main container 1 and introducing power as electromagnetic waves, a plurality of feeding antennas 6 provided, respectively, on plurality of power introduction ports 2, a combiner part 10 performing spatial combining of electromagnetic waves radiated from the plurality of feeding antennas 6 into main container 1, and an output port 11 for outputting electromagnetic waves combined at combiner part 10. Each feeding antenna 6 consists of an antenna main body 23 having a first pole 21 to which electromagnetic waves are supplied from a power introduction port 2 and a second pole 22 for radiating the electromagnetic waves thus supplied, and a reflection part 24 so provided as to project sideways from antenna main body 23 and reflecting electromagnetic waves.

摘要翻译： 功率组合器100包括管状主容器1，设置在主容器1的侧表面上并且作为电磁波引入电力的多个电力引入口2，分别设置在多个电力引入件上的多个馈电天线6 端口2，将从多个馈电天线6辐射的电磁波空间组合到主容器1中的组合器部分10和用于输出组合在一起的电磁波的输出端口11.每个馈电天线6由天线主体 主体23具有从功率引入口2供给电磁波的第一极21和用于照射如此供给的电磁波的第二极22，以及设置成从天线主体23侧向突出并反射的反射部24 电磁波。

公开(公告)号：US07661386B2

公开(公告)日：2010-02-16

申请号：US10467293

申请日：2002-02-08

申请人： Shigeru Kasai ,  Takashi Kakegawa

发明人： Shigeru Kasai ,  Takashi Kakegawa

IPC分类号： C23C16/52 ,  C23C16/44 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/3244 ,  H01L21/28556

摘要： A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

摘要翻译： 本发明的成膜装置是一种成膜装置，它包括：一个限定腔室的处理容器，布置在该腔室中的基座，待处理的基底可以放置在其上;一个与基座相对设置的喷头 具有大量排气孔的气体供给机构，其通过喷头将处理气体供给到室内;以及喷头温度控制单元，其控制喷头的温度。

公开(公告)号：US20090151639A1

公开(公告)日：2009-06-18

申请号：US12314326

申请日：2008-12-08

申请人： Shigeru Kasai ,  Norihiko Yamamoto ,  Masayuki Tanaka

发明人： Shigeru Kasai ,  Norihiko Yamamoto ,  Masayuki Tanaka

IPC分类号： C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/14 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45572 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.

摘要翻译： 气体处理装置1包括：处理容器2，用于在使用处理气体的同时对晶片W进行处理;安装台5，布置在处理容器2中以安装晶片W;喷淋头22，其对应于晶片W布置 在安装台5上将处理气体排出到处理容器2和用于排出处理容器2内部的排气装置132.喷淋头22具有与安装在安装台上的晶片W相对应布置的第一排气孔46 5和第二气体排出孔47独立地布置在第一气体排出孔46周围，以将处理气体排出到晶片W的周边部分。因此，通过向基板供给均匀的气体，可以进行均匀的气体处理 。

公开(公告)号：US20090133755A1

公开(公告)日：2009-05-28

申请号：US12320197

申请日：2009-01-21

申请人： Shigeru Kasai ,  Sum Tanaka ,  Tetsuya Saito ,  Norihiko Yamamoto ,  Kenichi Yanagitani

发明人： Shigeru Kasai ,  Sum Tanaka ,  Tetsuya Saito ,  Norihiko Yamamoto ,  Kenichi Yanagitani

IPC分类号： C23C16/448 ,  G05D7/06

CPC分类号： H01L21/67017 ,  C23C16/4481 ,  Y10T137/0324

摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided.In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.

摘要翻译： 提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。 一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。

公开(公告)号：US07445690B2

公开(公告)日：2008-11-04

申请号：US11088811

申请日：2005-03-25

申请人： Shigeru Kasai ,  Yuki Osada ,  Takashi Ogino

发明人： Shigeru Kasai ,  Yuki Osada ,  Takashi Ogino

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H05B6/705

摘要： A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality if microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

摘要翻译： 等离子体处理装置包括用于容纳待处理基板的室，用于将处理气体供应到室中的气体供给单元和用于将等离子体产生微波引入室的微波引入单元。 微波引入单元包括微波振荡器，用于输出具有指定输出的多个微波，以及具有分别从微波振荡器输出微波的多个天线的天线部分。

公开(公告)号：US20080226272A1

公开(公告)日：2008-09-18

申请号：US12120637

申请日：2008-05-14

申请人： Shigeru Kasai ,  Tomohiro Suzuki

发明人： Shigeru Kasai ,  Tomohiro Suzuki

IPC分类号： H01L21/324 ,  H01L21/477

CPC分类号： H01L21/324 ,  H01L21/2686 ,  H01L21/67115

摘要： A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type.

摘要翻译： 用于加热目标物体W的加热装置设置有多个加热光源，其包括用于向物体施加波长在360nm至520nm范围内的加热光的LED元件。 因此，不管膜类型如何，仅在物体的浅表面（例如半导体晶片）的温度以均匀的温度分布在高速下被增加/减少。

公开(公告)号：US20070175396A1

公开(公告)日：2007-08-02

申请号：US11727485

申请日：2007-03-27

申请人： Shigeru Kasai ,  Takashi Kakegawa

发明人： Shigeru Kasai ,  Takashi Kakegawa

IPC分类号： C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/3244 ,  H01L21/28556

摘要： A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

摘要翻译： 本发明的成膜装置是一种成膜装置，它包括：一个限定腔室的处理容器，布置在该腔室中的基座，待处理的基底可以放置在其上;一个与基座相对设置的喷头 具有大量排气孔的气体供给机构，其通过喷头将处理气体供给到室内;以及喷头温度控制单元，其控制喷头的温度。

公开(公告)号：US20050189074A1

公开(公告)日：2005-09-01

申请号：US11123174

申请日：2005-05-06

申请人： Shigeru Kasai ,  Seiji Ishibashi ,  Kaoru Yamamoto ,  Sumi Tanaka ,  Kenichi Yanagitani

发明人： Shigeru Kasai ,  Seiji Ishibashi ,  Kaoru Yamamoto ,  Sumi Tanaka ,  Kenichi Yanagitani

IPC分类号： C23F1/00 ,  G05D16/20 ,  H01L21/00 ,  H01L21/683

CPC分类号： H01L21/67253 ,  G05D16/2026 ,  H01L21/67109 ,  H01L21/6831

摘要： A processing apparatus includes a processing vessel, a gas introduction unit, a processing gas supply unit, a nonreactive gas supply unit, a vacuum pumping unit, a pressure gauge and a control unit. The control unit controls a valve opening ratio of a pressure control valve based on a detection value of the pressure gauge while making a processing gas flow to a flow rate controller of the processing gas supply unit at a constant flow rate when performing a process in which a partial pressure of the processing gas is important. Meanwhile, when performing a process wherein the partial pressure of the processing gas is relatively unimportant, the control unit fixes the valve opening ratio of the pressure control valve at a predetermined value, and operating a flow rate controller of the nonreactive gas supply unit to control a flow rate based on the detection value.

摘要翻译： 处理装置包括处理容器，气体导入单元，处理气体供给单元，非反应性气体供给单元，真空泵送单元，压力计和控制单元。 控制单元在执行以下处理过程的过程中，以处于恒定流量的方式使处理气体流入处理气体供给单元的流量控制器时，基于压力计的检测值来控制压力控制阀的开阀率 处理气体的分压很重要。 同时，当进行处理气体的分压相对不重要的处理时，控制单元将压力控制阀的开阀比固定在预定值，并且操作非反应气供给单元的流量控制器以控制 基于检测值的流量。

公开(公告)号：US20050034815A1

公开(公告)日：2005-02-17

申请号：US10498672

申请日：2002-11-25

申请人： Shigeru Kasai ,  Nobuhiko Yamamoto ,  Hikaru Adachi ,  Yuki Osada

发明人： Shigeru Kasai ,  Nobuhiko Yamamoto ,  Hikaru Adachi ,  Yuki Osada

IPC分类号： H05H1/46 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01P5/103 ,  C23F1/00

CPC分类号： H01J37/32256 ,  H01J37/32192 ,  H01J37/32568 ,  H01P5/103

摘要： A plasma processor with a microwave generating source mounted integrally on a shield lid by miniaturizing a matching circuit. The plasma processor is characterized by comprising a evacuatable processing vessel (42), a workpiece mount base (44) provided in the processing vessel, a microwave transmitting plate (70) provided in the opening section of the top of the processing vessel, a plane antenna member (74) for supplying a microwave into the processing vessel via the microwave transmitting plate, a shield lid (78) so grounded as to cover the top of the plane antenna member, a waveguide (82) for guiding the microwave from a microwave generating source to the plane antenna member, a member elevating mechanism (85) for relatively varying the vertical distance between the plane antenna member and the shield lid, a tuning rod (104) so provided insertably into the waveguide tube, a tuning rod drive mechanism (102) so moving the tuning rod as to adjust its insert amount, and a matching control section (114) for matching adjustment by controlling the elevation amount of the antenna member and the insert amount of the tuning rod.

摘要翻译： 具有微波发生源的等离子体处理器通过使匹配电路小型化而整体地安装在屏蔽盖上。 等离子体处理器的特征在于包括可排出的处理容器（42），设置在处理容器中的工件安装基座（44），设置在处理容器顶部的开口部分中的微波传输板（70） 天线构件（74），用于经由微波传输板将微波提供到处理容器中;屏蔽盖（78），其被接地以覆盖平面天线构件的顶部;波导（82），用于引导微波从微波 产生源到平面天线构件的构件升降机构，用于相对地改变平面天线构件和屏蔽盖之间的垂直距离的构件升降机构（85），可插入到波导管中的调谐杆（104），调谐杆驱动机构 （102），以便调整调节杆的插入量;以及匹配控制部（114），用于通过控制天线部件的仰角量和插入量来匹配调整 e调音杆。

公开(公告)号：US06627859B1

公开(公告)日：2003-09-30

申请号：US09857849

申请日：2001-06-11

申请人： Shigeru Kasai ,  Naoto Ikeda

发明人： Shigeru Kasai ,  Naoto Ikeda

IPC分类号： H05B302

CPC分类号： H05B1/0247 ,  G05D23/1902 ,  G05D23/306

摘要： A CVD device (100) includes a 142 process chamber (102), in the wall of which first to fourth cartridge heaters (146, 148, 150, 152) are buried. The heaters have resistance whose value increases with temperature. A heater controller (160) determines the heater resistance from the current and voltage values associated with each heater. The heater controller (160) corrects a reference resistance corresponding to a set temperature by using a correction value corresponding to the temperature detected by a temperature sensor (250), and multiplies the corrected reference resistance by the temperature distribution constant of each heater to determine the target resistance. The heater controller (160) properly controls the phase of the AC power supplied to each heater so that the heater resistance may follow the target resistance. The first to fourth cartridge heaters (146, 148, 150, 152) are thus controlled accurately.

摘要翻译： CVD装置（100）包括在第一至第四盒式加热器（146,148,150,152）的壁中的142处理室（102）。 加热器的电阻值随温度升高。 加热器控制器（160）根据与每个加热器相关联的电流和电压值确定加热器电阻。 加热器控制器（160）通过使用与温度传感器（250）检测到的温度相对应的校正值来校正与设定温度相对应的参考电阻，并将校正的参考电阻乘以每个加热器的温度分布常数，以确定 目标电阻。 加热器控制器（160）适当地控制提供给每个加热器的AC电力的相位，使得加热器电阻可以跟随目标电阻。 因此，第一至第四盒式加热器（146,148,150,152）被精确地控制。