摘要:
A memory module stores data in the form of code words, each code word comprising useful bits and check bits for error correction. The memory module contains a first group of the memory devices including check bits and a second group of the memory devices including useful bits, the second group memory devices forming ranks, each rank being addressed as a whole, the ranks forming rank groups, each rank group including at least two ranks and a first group memory device. The memory module further contains a connecting device transferring bit packets each containing useful bits and check bits in the parallel format between an interface of the memory module and the memory devices of a selected rank group.
摘要:
Embodiments of the invention relate to an integrated circuit comprising at least one functional unit configured to operate at a first clock frequency. The integrated circuit also comprises at least one first interconnect originating from a contact pad and leading to at least one frequency divider configured to receive a clock signal having a second frequency and generate one or more clock signals to operate the functional unit at the first frequency. The integrated circuit further comprises at least one second interconnect coupling an output of the frequency divider and an input of the functional unit, wherein a total length of the second wired interconnect is less than a total length of the first wired interconnects.
摘要:
An integrated device comprising a storage location, wherein data stored in the storage location is repeatedly refreshed with a first predetermined refresh rate during a first period of time. The first period of time provides a first predetermined duration. After the end of the first period of time, the data is repeatedly refreshed with a second predetermined refresh rate.
摘要:
An integrated circuit includes a first connection and a memory circuit. The integrated circuit is switchable between a master mode of operation, in which a buffer between the first connection and the memory circuit is activated, and a slave mode of operation, in which the buffer between the first connection and the memory circuit is deactivated.
摘要:
An input receiver circuit is provided for receiving a noisy high-speed input signal and for generating a plurality of output signals that can be processed at a low acquisition speed compared to the speed of the high-speed input signal. The input receiver circuit includes an input for receiving the high-speed input signal (data), a plurality of integration elements and a switch for connecting the input to one of the plurality of integration elements for integrating the high-speed input signal. The input receiver circuit further includes a plurality of means for receiving one of the integrated high-speed input signals at a time and for outputting one of the plurality of output signals at a time, and a controller for controlling the switch.
摘要:
The present invention relates to a memory arrangement having a controller and having at least one memory device. Data signals, control signals and address signals can be transferred between the controller and the memory device. The memory arrangement is designed in such a way that the data signals can be transferred via data signal lines between the controller and the memory device. The memory arrangement is furthermore designed in such a way that the control signals and the address signals can likewise be transferred via the data signal lines between the controller and the memory device.
摘要:
A semiconductor component includes an integrated semiconductor chip and a chip housing. The chip housing has first, second, third and fourth conductor tracks that connect input and output connections of the semiconductor chip to external contact connections on the underside and top side of the chip housing in such a way that a loop back interconnection of a plurality of semiconductor components stacked one on top of another is made possible without subsequent structural alterations to the chip housings thereof.
摘要:
A memory module is proposed which has a first contact bank at a first edge of its electronic printed circuit board and a second contact bank at a second edge. The printed circuit board has first lines that reach from the first contact bank as far as input connections of at least some of the semiconductor components. The printed circuit board has second conductor lines that reach from output connections of at least some of the semiconductor components as far as the first contact bank. The printed circuit board has third conductor lines that reach from output connections of at least some of the semiconductor components as far as the second contact bank. The printed circuit board has fourth conductor lines that reach from the second contact bank as far as input connections of at least some of the semiconductor components.
摘要:
A memory module stores data in the form of code words, each code word comprising useful bits and check bits for error correction. The memory module contains a first group of the memory devices including check bits and a second group of the memory devices including useful bits, the second group memory devices forming ranks, each rank being addressed as a whole, the ranks forming rank groups, each rank group including at least two ranks and a first group memory device. The memory module further contains a connecting device transferring bit packets each containing useful bits and check bits in the parallel format between an interface of the memory module and the memory devices of a selected rank group
摘要:
Method for repairing hardware faults in memory chips. According to one embodiment, a method is provided for repairing bit errors in memory chips having a multiplicity of memory cells. The method can include detecting bit errors using an error identification algorithm. Further, the method can include determining the addresses of faulty memory cells. The method can also include setting a data bit initiating a repair mode in response to detecting a bit error. In the repair mode, a signal present on a data line to the memory chips can be interpreted as a repair command to perform a repair. In addition, the method can include repairing the bit errors by activating redundant memory cells.