公开(公告)号：US20220345228A1

公开(公告)日：2022-10-27

申请号：US17860087

申请日：2022-07-07

Applicant: Texas Instruments Incorporated

Inventor： Bichoy Bahr ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: H04B11/00 ,  H01L29/51

Abstract: In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.

公开(公告)号：US11417540B2

公开(公告)日：2022-08-16

申请号：US17114240

申请日：2020-12-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/66 ,  H01L23/495 ,  H01L23/00

Abstract: In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.

公开(公告)号：US11370662B2

公开(公告)日：2022-06-28

申请号：US16230070

申请日：2018-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Luigi Colombo ,  Nazila Dadvand ,  Benjamin Stassen Cook ,  Archana Venugopal

IPC: C01B21/064 ,  C23C16/34 ,  C23C18/32 ,  C23C18/16 ,  C23C18/36 ,  C23C18/28 ,  C23C18/30 ,  C23C18/20 ,  G03F1/60 ,  G03F1/20 ,  C23C18/38 ,  C23C18/42

Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.

公开(公告)号：US20220166144A1

公开(公告)日：2022-05-26

申请号：US17328082

申请日：2021-05-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hassan Omar Ali ,  Richard George Wallace ,  Benjamin Stassen Cook ,  Swaminathan Sankaran ,  Sanjay Mohan

IPC: H01Q9/04 ,  H01Q1/22

Abstract: An antenna integrated in a device package is formed such that at least a portion of the antenna is elevated with respect to a substrate of the device package. The entire antenna and its functionality are positioned within a space extending vertically upwardly from a footprint of the substrate that contains circuitry of the device. The boundary of the space is defined by the perimeter of an over mold positioned on the substrate and encapsulating the circuitry.

公开(公告)号：US11264369B2

公开(公告)日：2022-03-01

申请号：US16859345

申请日：2020-04-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Barry Jon Male ,  Benjamin Stassen Cook ,  Robert Alan Neidorff ,  Steve Kummerl

IPC: H01L25/16 ,  H01F38/14 ,  H01L31/0203 ,  H01L31/101 ,  H01L23/31 ,  H01L23/49 ,  H01L23/495 ,  H01L49/02 ,  H01L31/02 ,  H01L31/103 ,  H01L31/11 ,  H01L31/167 ,  H01L33/62 ,  H04B10/80 ,  H01L33/00 ,  H01L33/60 ,  H01L23/00

Abstract: In described examples, an integrated circuit includes a leadframe structure, which includes electrical conductors. A first coil structure is electrically connected to a first pair of the electrical conductors of the leadframe structure. The first coil structure is partially formed on a semiconductor die structure. A second coil structure is electrically connected to a second pair of the electrical conductors of the leadframe structure. The second coil structure is partially formed on the semiconductor die structure. A molded package structure encloses portions of the leadframe structure. The molded package structure exposes portions of the first and second pairs of the electrical conductors to allow external connection to the first and second coil structures. The molded package structure includes a cavity to magnetically couple portions of the first and second coil structures.

公开(公告)号：US11251138B2

公开(公告)日：2022-02-15

申请号：US16717262

申请日：2019-12-17

Applicant: Texas Instruments Incorporated

Inventor： Scott Robert Summerfelt ,  Thomas Dyer Bonifield ,  Sreeram Subramanyam Nasum ,  Peter Smeys ,  Benjamin Stassen Cook

IPC: H01L23/00 ,  H01L23/29 ,  H01L21/78 ,  H01L23/64 ,  H01L21/762 ,  H01L23/31

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

公开(公告)号：US11239195B2

公开(公告)日：2022-02-01

申请号：US16843580

申请日：2020-04-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sreenivasan Kalyani Koduri ,  Benjamin Stassen Cook ,  Ralf Jakobskrueger Muenster

IPC: H01L23/31 ,  H01L21/78 ,  H01L23/495 ,  H01L23/00

Abstract: In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

公开(公告)号：US11128345B2

公开(公告)日：2021-09-21

申请号：US16773557

申请日：2020-01-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen Cook ,  Swaminathan Sankaran

IPC: H04B5/00 ,  H01P5/00 ,  H01P5/107 ,  H01P3/12 ,  H01P3/16 ,  H01Q7/00

Abstract: A system is provided in which a first waveguide has a first resonator coupled to an end of the first waveguide. A second waveguide has a second resonator coupled to the second waveguide. The first resonator is spaced apart from the second resonator by a gap distance. Transmission of a signal propagated by the first waveguide across the gap to the second waveguide is enhanced by a confined near field mode magnetic field produced by the first resonator in response to the propagating wave that is coupled to the second resonator.

公开(公告)号：US20210265299A1

公开(公告)日：2021-08-26

申请号：US17315102

申请日：2021-05-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier ,  Sadia Naseem ,  Mahmud Halim Chowdhury

IPC: H01L23/00

Abstract: In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

公开(公告)号：US10985729B2

公开(公告)日：2021-04-20

申请号：US16235512

申请日：2018-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bichoy Bahr ,  Baher S. Haroun ,  Benjamin Stassen Cook

IPC: G01L11/00 ,  H03H9/02 ,  H03H3/02 ,  G01L7/00 ,  H03H9/17 ,  G01R23/02 ,  G01L21/08 ,  G01L9/00

Abstract: A pressure sensor apparatus is disclosed. The pressure sensor apparatus includes a bulk acoustic wave (BAW) die having a die interface side and a pressure contact side, a sensor BAW resonator and a reference BAW resonator disposed on the die interface side of the BAW die, a control circuit die coupled to the die interface side of the BAW die via an attachment layer, and an extended opening on the pressure contact side that extends into a depth of the BAW die and is generally aligned with the sensor BAW resonator, the extended opening being configured to translate an external pressure on the pressure contact side onto the sensor BAW resonator.