公开(公告)号：US07728511B2

公开(公告)日：2010-06-01

申请号：US11603362

申请日：2006-11-21

申请人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01J63/04

CPC分类号： H01L51/0021 ,  H01L21/76895 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

摘要翻译： 提供有机薄膜晶体管（TFT），制造有机TFT的方法以及具有有机TFT的平面显示装置。 有机TFT具有栅极绝缘层，其开口填充有导电材料，从而防止在将源极和漏极线连接到有机半导体层的沟道之间发生短路。 有机TFT包括包括源极线，漏极线和栅电极的衬底。 有机TFT还包括形成在源极线和漏极线上以及栅极电极上的栅极绝缘层。 栅极绝缘层具有露出源极和漏极线的开口，该开口填充有导电材料。 有机TFT还包括与导电材料电连接的有机半导体层。

公开(公告)号：US07692245B2

公开(公告)日：2010-04-06

申请号：US11195859

申请日：2005-08-03

申请人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/01

CPC分类号： H01L27/12 ,  G02F1/13624

摘要： In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode. The second thin film transistor includes: a second gate electrode formed on the substrate and electrically connected to one of the first electrode and the second electrode; a third electrode insulated from the second gate electrode; a fourth electrode insulated from the second gate electrode and surrounding the third electrode in the same plane; and a second semiconductor layer insulated from the second gate electrode and contacting the third electrode and the fourth electrode.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的平板显示装置中，串扰最小化。 平板显示装置包括基板，第一薄膜晶体管，第二薄膜晶体管和显示元件。 第一薄膜晶体管包括：形成在基板上的第一栅电极; 与所述第一栅电极绝缘的第一电极; 与第一栅电极绝缘并在同一平面内围绕第一电极的第二电极; 以及与第一栅电极绝缘并与第一电极和第二电极接触的第一半导体层。 第二薄膜晶体管包括：形成在基板上并电连接到第一电极和第二电极之一的第二栅电极; 与所述第二栅电极绝缘的第三电极; 与第二栅电极绝缘并在同一平面内围绕第三电极的第四电极; 以及与第二栅电极绝缘并与第三电极和第四电极接触的第二半导体层。

公开(公告)号：US20100072478A1

公开(公告)日：2010-03-25

申请号：US12591548

申请日：2009-11-23

申请人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L27/12

CPC分类号： H01L27/3276 ,  H01L27/3265

摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

公开(公告)号：US20090250693A1

公开(公告)日：2009-10-08

申请号：US12385197

申请日：2009-04-01

申请人： Hong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Hong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L29/26 ,  H01L29/786 ,  H01L51/52 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

摘要翻译： 一种薄膜晶体管（TFT），包括基板，基板上的栅电极，包括沟道区，源极区和漏极区的氧化物半导体层，栅电极和氧化物半导体层之间的栅极绝缘层 以及与氧化物半导体层的源极和漏极区域接触的源极和漏极，其中氧化物半导体层具有包括下层和上层的GaInZnO（GIZO）双层结构，并且上层具有 不同的铟（In）浓度比下层。

公开(公告)号：US07538017B2

公开(公告)日：2009-05-26

申请号：US11263058

申请日：2005-10-31

申请人： Min-Kyu Kim ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Hyun-Soo Shin

发明人： Min-Kyu Kim ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Hyun-Soo Shin

IPC分类号： H01L21/3205

CPC分类号： H01L27/1262 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/5253

摘要： Provided are a method of manufacturing a plastic substrate having a TFT, a substrate manufactured thereby, a method of manufacturing a flat panel display device, and a flat display device manufactured thereby, which can be used for a flexible flat display device. The method includes: preparing a film in which a plurality of conductive patterns are included; bonding the film to a substrate; forming the TFT in a manner such that it is electrically connected to the conductive pattern on the film; and forming an insulating layer covering the TFT on the film.

摘要翻译： 提供一种制造具有TFT的塑料基板的方法，由其制造的基板，制造平板显示装置的方法以及由此制造的平面显示装置，其可以用于柔性平板显示装置。 该方法包括：制备其中包括多个导电图案的膜; 将膜粘合到基底上; 以这样的方式形成TFT，使得其电连接到膜上的导电图案; 以及在膜上形成覆盖TFT的绝缘层。

公开(公告)号：US07470931B2

公开(公告)日：2008-12-30

申请号：US11134294

申请日：2005-05-23

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L51/0545 ,  G02F1/136227 ,  G02F1/1368 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.

摘要翻译： 薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。 第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容， 第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。 第一电容大于第二电容，第三电容和第四电容中的一个。

公开(公告)号：US20080305360A1

公开(公告)日：2008-12-11

申请号：US12155489

申请日：2008-06-05

申请人： Dong-Won Han ,  Yeon-Gon Mo ,  Jin-Ho Kwack

发明人： Dong-Won Han ,  Yeon-Gon Mo ,  Jin-Ho Kwack

IPC分类号： C09K11/00 ,  C23C14/14

CPC分类号： H01L51/5256

摘要： An organic light emitting device includes an organic light emitting diode on a substrate and an encapsulation layer covering the organic light emitting diode. The encapsulation layer includes an organic layer, an inorganic layer on the organic layer, and an intermixing region between the organic layer and the inorganic layer, the organic layer includes an organic material, the inorganic layer includes an inorganic material, and the intermixing region includes the organic material and the inorganic material.

摘要翻译： 有机发光器件包括衬底上的有机发光二极管和覆盖有机发光二极管的封装层。 封装层包括有机层，有机层上的无机层和有机层与无机层之间的混合区域，有机层包括有机材料，无机层包括无机材料，并且混合区域包括 有机材料和无机材料。

公开(公告)号：US20080277658A1

公开(公告)日：2008-11-13

申请号：US12149944

申请日：2008-05-09

申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

公开(公告)号：US20070085961A1

公开(公告)日：2007-04-19

申请号：US11523607

申请日：2006-09-20

申请人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

IPC分类号： G02F1/1345

CPC分类号： H01L27/3276 ,  H01L2251/5338

摘要： A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.

摘要翻译： 即使显示单元弯曲，柔性平板显示器也可防止电子单元，例如柔性印刷电路板和驱动IC与柔性平板显示器分离。 柔性平板显示器包括：柔性显示单元，包括适于显示图像的显示区域，平行于显示区域边缘的第一侧面和第二侧面，以及垂直于第一和第二侧面的第三侧面和第四侧面 侧面，第三面和第四面适于弯曲; 以及仅在第一和第二侧中的至少一个上排列并且不存在第三和第四侧的电子单元。

公开(公告)号：US20060267094A1

公开(公告)日：2006-11-30

申请号：US11436531

申请日：2006-05-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/12

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.