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76 条记录 (耗时 0.028 秒)

    Dielectric porcelain composition for use in electronic devices
    53.
    发明授权
    Dielectric porcelain composition for use in electronic devices 失效
    用于电子设备的介电瓷组合物

    公开(公告)号：US07732361B2

    公开(公告)日：2010-06-08

    申请号：US12063483

    申请日：2005-08-11

    申请人： Takeshi Shimada

    发明人： Takeshi Shimada

    IPC分类号： C04B35/495

    CPC分类号： H01B3/12 ,  C04B35/495 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  H05K1/0306

    摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient τf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3—Y(BazSr1-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient τf can be controlled in a negative direction and the τf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

    摘要翻译： 本发明提供一种用于电子器件的电介质瓷组合物，其可以以特别是负方向的温度系数τf进行控制，并且可以在保持高Qf值和高介电常数的同时缩短烧结时间。 根据本发明，在具有由XBa（Mg1 / 3Ta2 / 3）O3-Y（BazSr1-z）（Ga1 / 2Ta1 / 2）O3表示的组成式的常规组合物中，当Mg被Ni取代以形成特定结构时 ，可以将温度系数τf控制在负方向，并且可以将τf控制在0.80〜-4.45ppm /℃的范围内，同时保持高Qf值和高介电常数，并且即使在烧结期间， 基本上50小时已经基本上需要减少到25小时，可以获得类似的Qf值。

    Plasma etching method
    56.
    发明授权
    Plasma etching method 有权
    等离子蚀刻法

    公开(公告)号：US07186659B2

    公开(公告)日：2007-03-06

    申请号：US11063180

    申请日：2005-02-23

    申请人： Kotaro Fujimoto ,  Takeshi Shimada

    发明人： Kotaro Fujimoto ,  Takeshi Shimada

    IPC分类号： H01L21/302 ,  H01L21/3065

    CPC分类号： C23F4/00

    摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.

    摘要翻译： 本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被蚀刻的材料选择性地蚀刻到材料下面的有机膜上。 蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属 由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

    Plasma processing apparatus
    57.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20060175016A1

    公开(公告)日：2006-08-10

    申请号：US11066223

    申请日：2005-02-28

    申请人： Manabu Edamura ,  Ken Yoshioka ,  Takeshi Shimada

    发明人： Manabu Edamura ,  Ken Yoshioka ,  Takeshi Shimada

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/321

    摘要： A plasma processing apparatus capable of generating a stable and uniform-density plasma includes a processing chamber whose one surface is formed by a flat-plate-like insulating-material manufactured window, a sample mounting stage in which a sample mounting plane is formed on a surface opposed to the insulating-material manufactured window of the processing chamber, a gas-inlet for introducing a processing gas into the processing chamber, a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, and an inductively coupled antenna formed outside the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined longitudinally, the direction being perpendicular to the sample mounting plane.

    摘要翻译： 能够产生稳定且均匀密度的等离子体的等离子体处理装置包括：处理室，其一个表面由平板状的绝缘材料制造的窗口形成;样品安装台，其中样品安装平面形成在 与处理室的绝缘材料制造窗口相对的表面，用于将处理气体引入处理室的气体入口，形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线，具有 设置在径向图案中的狭缝，以及形成在绝缘材料制造窗口外部的电感耦合天线，并且经由窗口执行与等离子体的电感耦合，等离子体形成在处理室内。 电感耦合天线由线圈构成，该线圈沿着纵向限定的方向缠绕多次，该方向垂直于样品安装平面。

    Dielectric porcelain composition for electronic devices
    59.
    发明授权
    Dielectric porcelain composition for electronic devices 失效
    电瓷器用介质瓷组合物

    公开(公告)号：US06331498B1

    公开(公告)日：2001-12-18

    申请号：US09581569

    申请日：2000-06-23

    申请人： Takeshi Shimada ,  Kazuhiro Nishikawa ,  Kazuya Toji

    发明人： Takeshi Shimada ,  Kazuhiro Nishikawa ,  Kazuya Toji

    IPC分类号： C04B35495

    CPC分类号： C04B35/495

    摘要： A dielectric ceramic composition for electronic devices, which exhibits &tgr;f and ∈r characteristics equivalent or superior to those of the dielectric ceramic composition of the prior art, can inhibit the evaporation of Zn from the composition to thereby facilitate the control of makeup of the composition, can give homogeneous ceramics through short-time sintering more stably, is improved particularly in permittivity (Qf) and controllability of temperature characteristics, and permits downsizing of the dielectric elements. This composition is a solid solution of XBa(Zn⅓.Ta⅔)O3—Y(BaZ.Sr1−Z)(Ga½.Ta½)O3 which contains a specific trivalent metal ion and has a Zn content adjusted to a predetermined level, wherein part of Ta contained in the XBa(Zn⅓.Ta⅔)O3 moiety has been replaced by Nb. The composition is improved not only in permittivity by virtue of the above replacement but also in the degree of sintering by virtue of the above trivalent metal, i.e., Ga contained in the Y(BaZ.Sr1−Z)(Ga½.Ta½)O3 moiety, thus attaining the effects of improvement in permittivity and control of temperature characteristics simultaneously.

    摘要翻译： 具有与现有技术的介电陶瓷组合物相当或优于现有技术的电介质陶瓷组合物的电子器件的电介质陶瓷组合物可以抑制Zn从组合物的蒸发，从而有助于控制组合物的组成 组合物可以通过短时间烧结得到均匀的陶瓷，特别是在介电常数（Qf）和温度特性的可控性方面得到改善，并且允许电介质元件的小型化。 该组合物是含有特定的三价金属离子并且Zn含量调节至预定水平的XBa（Zn1/3.Ta⅔）O 3-Y（BaZ.Sr 1 -Z）（Ga 1/2.T a 1/2）O 3的固溶体，其中部分 包含在XBa（Zn 1/3 Ta）O 3部分中的Ta已被Nb替代。 通过上述替代，组合物不仅在介电常数方面得到改善，而且由于上述三价金属，即包含在Y（BaZ.Sr 1 -Z）（Ga 1/2 .Ta 1/2）O 3部分中的Ga ，从而达到提高介电常数和同时控制温度特性的效果。

    System and method for installing software applications
    60.
    发明授权
    System and method for installing software applications 有权
    用于安装软件应用程序的系统和方法

    公开(公告)号：US08621457B2

    公开(公告)日：2013-12-31

    申请号：US12617592

    申请日：2009-11-12

    申请人： Kenji Yamamoto ,  Tsutomu Kaneshige ,  Yusuke Shibata ,  Takeshi Shimada

    发明人： Kenji Yamamoto ,  Tsutomu Kaneshige ,  Yusuke Shibata ,  Takeshi Shimada

    IPC分类号： G06F9/445

    CPC分类号： G06F8/61 ,  G06F3/04817 ,  G06F3/0482 ,  G06F8/60 ,  G06F9/451

    摘要： An example method of installing an application onto an apparatus involves displaying an application menu screen comprising a fixed number of menu item display locations, at least one of the menu item display locations displaying a first menu item for an non-installed application. An announcement screen is displayed in response to selection of the first menu item for the non-installed application, the announcement screen comprising a selection item configured to initiate a downloading operation for the non-installed application. The downloading operation is initiated in response to selection of the selection item. The application can be installed/non-installed separately from other applications.

    摘要翻译： 将应用程序安装到设备上的示例性方法包括显示包括固定数量的菜单项显示位置的应用菜单屏幕，显示用于未安装应用的第一菜单项的菜单项显示位置中的至少一个。 响应于未安装应用的第一菜单项的选择显示公告屏幕，所述通知屏幕包括被配置为启动未安装应用的下载操作的选择项。 响应于选择项目的选择而启动下载操作。 该应用程序可以与其他应用程序分开安装/未安装。