公开(公告)号：US20060175016A1

公开(公告)日：2006-08-10

申请号：US11066223

申请日：2005-02-28

申请人： Manabu Edamura ,  Ken Yoshioka ,  Takeshi Shimada

发明人： Manabu Edamura ,  Ken Yoshioka ,  Takeshi Shimada

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/321

摘要： A plasma processing apparatus capable of generating a stable and uniform-density plasma includes a processing chamber whose one surface is formed by a flat-plate-like insulating-material manufactured window, a sample mounting stage in which a sample mounting plane is formed on a surface opposed to the insulating-material manufactured window of the processing chamber, a gas-inlet for introducing a processing gas into the processing chamber, a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, and an inductively coupled antenna formed outside the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined longitudinally, the direction being perpendicular to the sample mounting plane.

摘要翻译： 能够产生稳定且均匀密度的等离子体的等离子体处理装置包括：处理室，其一个表面由平板状的绝缘材料制造的窗口形成;样品安装台，其中样品安装平面形成在 与处理室的绝缘材料制造窗口相对的表面，用于将处理气体引入处理室的气体入口，形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线，具有 设置在径向图案中的狭缝，以及形成在绝缘材料制造窗口外部的电感耦合天线，并且经由窗口执行与等离子体的电感耦合，等离子体形成在处理室内。 电感耦合天线由线圈构成，该线圈沿着纵向限定的方向缠绕多次，该方向垂直于样品安装平面。

公开(公告)号：US20100263796A1

公开(公告)日：2010-10-21

申请号：US12783686

申请日：2010-05-20

申请人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

发明人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

IPC分类号： H01L21/465 ,  C23F1/08 ,  C23C16/00

CPC分类号： H01J37/321

摘要： A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.

摘要翻译： 等离子体处理装置包括处理室，用于安装待加工物体的样品台，电源以及连接到电源的至少一个感应线圈。 感应线圈通过以并联电路状布置连接至少两个相同的线圈元件而形成，使得当从样品台观察时，电流以相同的方向在多个相同的线圈元件中的每一个中流动。 感应线圈被定位成使得其中心对应于物体的中心，并且线圈元件的输入端部以相等的角度间隔沿圆周方向移位，其通过将360°除以相同线圈元件的数量而计算。

公开(公告)号：US20070184563A1

公开(公告)日：2007-08-09

申请号：US11735657

申请日：2007-04-16

申请人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.

摘要翻译： 一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

公开(公告)号：US20050224182A1

公开(公告)日：2005-10-13

申请号：US10921341

申请日：2004-08-19

申请人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

发明人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

IPC分类号： H05H1/46 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/321

摘要： The invention provides an inductively coupled plasma apparatus capable of disposing a parallel coil with a large number of total turns in a relatively small space. The present plasma processing apparatus comprises a processing chamber for subjecting an object to plasma processing, an inlet means for introducing a processing gas into the processing chamber, an evacuation means for evacuating an interior of the processing chamber, a sample stage for placing the object, a power supply means for generating plasma, and at least one induction coil connected to the power supply means, wherein the induction coil is formed by connecting a plurality of identical coil elements 101 in a parallel circuit-like arrangement, the induction coil being positioned so that its center corresponds to a center of the object, and wherein input ends 101 in of the coil elements 101 are arranged at equal angular intervals calculated by dividing 360° by the number of coil elements, the coil elements having a three-dimensional structure in a radial direction and a height direction along a surface of an annular ring with an arbitrary cross-sectional shape.

摘要翻译： 本发明提供一种电感耦合等离子体装置，其能够在相对较小的空间中设置具有大量总匝数的平行线圈。 本等离子体处理装置包括用于对物体进行等离子体处理的处理室，用于将处理气体引入处理室的入口装置，用于抽出处理室内部的抽空装置，用于放置物体的样品台， 用于产生等离子体的电源装置和连接到电源装置的至少一个感应线圈，其中感应线圈通过以并联电路状布置连接多个相同的线圈元件101而形成，感应线圈定位成 其中心对应于物体的中心，并且其中线圈元件101中的输入端101a以360度乘以线圈元件的数量计算的等角度间隔布置，线圈元件具有三维结构 沿着具有任意横截面形状的环形环的表面的径向方向和高度方向。

公开(公告)号：US06245202B1

公开(公告)日：2001-06-12

申请号：US09155906

申请日：1998-10-08

申请人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

发明人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01L21/3065 ,  H05H1/46

摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.

摘要翻译： 在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性 用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。 将绝缘材料和天线置于真空中。 由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。 因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。 通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。 或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

公开(公告)号：US06180019B2

公开(公告)日：2001-01-30

申请号：US08979949

申请日：1997-11-26

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H102

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

摘要翻译： 通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。 法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除 等离子体点火后。 在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

公开(公告)号：US06850012B2

公开(公告)日：2005-02-01

申请号：US10224467

申请日：2002-08-21

申请人： Manabu Edamura ,  Kazuyuki Ikenaga ,  Ken Yoshioka ,  Akitaka Makino

发明人： Manabu Edamura ,  Kazuyuki Ikenaga ,  Ken Yoshioka ,  Akitaka Makino

IPC分类号： C23C16/507 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  H01J7/24

CPC分类号： H01J37/321 ,  H05H1/46

摘要： Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements and a plurality of lead wire portions for effecting connection between the coil elements. The coil elements are disposed inside of a process chamber, while the lead wire portions which effect connection between the coil elements are disposed outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division thereof, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.

摘要翻译： 感应耦合型等离子体处理装置的感应线圈被分成多个线圈元件和多个引线部分，用于实现线圈元件之间的连接。 线圈元件设置在处理室的内部，而实现线圈元件之间的连接的引线部分设置在处理室的外部。 设置在处理室中的线圈元件由于其分开而呈短弧形，使得它们可以容易地相对于处理室的中心对称布置，从而可以容易地实现均匀的等离子体分布 。

公开(公告)号：US06172321B2

公开(公告)日：2001-01-09

申请号：US09433551

申请日：1999-11-04

申请人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

发明人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

IPC分类号： B23K1000

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32678

摘要： A plasma processing apparatus and method of processing a specimen by a plasma. The method and apparatus includes independently controlling a density distribution of the plasma.

摘要翻译： 一种等离子体处理装置和通过等离子体处理试样的方法。 该方法和装置包括独立地控制等离子体的密度分布。

公开(公告)号：US06034346A

公开(公告)日：2000-03-07

申请号：US649190

申请日：1996-05-17

申请人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

发明人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32678

摘要： An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled plasma processing apparatus has a loop antenna for passing a high-frequency wave, a cavity resonator for surrounding the loop antenna, and a slit in double-layer structure in a position where the cavity resonator faces a plasma. The plasma on the surface of a wafer can be processed uniformly with various desirable effects including: (1) preventing foreign matter from being produced and abnormal discharge because of electrostatic coupling; (2) improving the ignitability and stability of a plasma; (3) lowering the antenna voltage; and (4) effecting uniform processing by providing an opposed grounding electrode.

摘要翻译： 电磁耦合等离子体处理装置被布置成使得通过同轴波导发送的微波在从放大的同轴部分辐射之前由平行盘形波导扩大。 电磁耦合等离子体处理装置具有用于使高频波通过的环形天线，用于包围环形天线的空腔谐振器和空腔谐振器面对等离子体的位置的双层结构的狭缝。 晶片表面上的等离子体能够均匀地加工，具有各种理想效果，包括：（1）防止由于静电耦合而产生异物和异常放电; （2）提高等离子体的点火性和稳定性; （3）降低天线电压; 和（4）通过提供相对的接地电极来实现均匀的处理。

公开(公告)号：US08083889B2

公开(公告)日：2011-12-27

申请号：US12434877

申请日：2009-05-04

申请人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.

摘要翻译： 提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。 本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源 进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体 其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。