公开(公告)号：US08251988B2

公开(公告)日：2012-08-28

申请号：US11417356

申请日：2006-05-03

申请人： Hiroyuki Takahashi

发明人： Hiroyuki Takahashi

IPC分类号： A61B18/04

CPC分类号： A61B17/22012 ,  A61B17/320068 ,  A61B2017/00017 ,  A61B2017/00482 ,  A61B2017/00973

摘要： An ultrasonic treatment apparatus includes an ultrasonic instrument, a fluid irrigation unit, a fluid suction unit, an ultrasonic driving control unit, and an irrigation/suction control unit. The ultrasonic instrument treats a living-body tissue through ultrasonic vibrations. The fluid irrigation unit supplies a cooling fluid for cooling the ultrasonic instrument to the ultrasonic instrument. The fluid suction unit sucks a cooling fluid irrigated by the fluid irrigation unit to the ultrasonic instrument. The ultrasonic driving control unit controls the driving of ultrasonic vibrations of the ultrasonic instrument. The irrigation/suction control unit sequentially controls the driving of the fluid irrigation unit and the driving of the fluid suction unit in accordance with the output of the ultrasonic driving control unit.

摘要翻译： 超声波处理装置包括超声波仪器，流体冲洗单元，流体抽吸单元，超声波驱动控制单元和冲洗/抽吸控制单元。 超声波仪器通过超声波振动来治疗生物体组织。 流体冲洗单元提供用于将超声波仪器冷却到超声仪器的冷却流体。 流体抽吸单元将由流体冲洗单元灌注的冷却流体吸入超声波仪器。 超声波驱动控制单元控制超声波仪器的超声波振动的驱动。 冲洗/抽吸控制单元根据超声波驱动控制单元的输出依次控制流体冲洗单元的驱动和流体抽吸单元的驱动。

公开(公告)号：US08128468B2

公开(公告)日：2012-03-06

申请号：US12302417

申请日：2007-05-28

申请人： Hiroyuki Takahashi ,  Shugo Takahashi ,  Yusuke Sugimoto ,  Tetsuya Chiba

发明人： Hiroyuki Takahashi ,  Shugo Takahashi ,  Yusuke Sugimoto ,  Tetsuya Chiba

IPC分类号： A63F13/06

CPC分类号： A63F13/42 ,  A63F13/06 ,  A63F13/10 ,  A63F13/537 ,  A63F2300/303 ,  A63F2300/6045

摘要： The icon 348 of a graphic user interface indicates the magnitude of an inputted impact by an impact pointer 348d which moves as the time elapses and receives input of the impact. Magnitude of the impact received by a GUI 34 is retained in the impact data as a product of the moving amount of the impact pointer 348d and a scale factor, of which the value can be switched together with the indication form of a gauge 348c depending on the movement of a slider 348a. Consequently, more realistic regulation of impact, e.g., half shot, can be attained when a ball is hit in a sport simulation game such as a golf game.

摘要翻译： 图形用户界面的图标348指示冲击指针348d的输入冲击的大小，冲击指针348d随着时间的流逝而移动并接收冲击的输入。 作为冲击指示器348d的移动量和比例因子的乘积，冲击数据被保留在冲击数据中，该值与可以与规格348c的指示形式一起切换，取决于 滑块348a的移动。 因此，当在诸如高尔夫游戏的运动模拟游戏中击中球时，可以获得更加实际的影响调节，例如半射击。

公开(公告)号：US20120025856A1

公开(公告)日：2012-02-02

申请号：US13272018

申请日：2011-10-12

申请人： Masakazu Ando ,  Hiroyuki Takahashi ,  Tsuyoshi Yamashita ,  Takashi Hashimoto

发明人： Masakazu Ando ,  Hiroyuki Takahashi ,  Tsuyoshi Yamashita ,  Takashi Hashimoto

IPC分类号： G01R31/00

CPC分类号： G01R31/2874 ,  G01R31/2891 ,  G01R31/31905 ,  H01L2924/0002 ,  H01L2924/00

摘要： Pressing an electronic device (2) to be tested to contact terminals (132a and 132b) while bringing a heater (112) having equal or close temperature change characteristics to those of the electronic device to be tested by a test pattern, transmitting a test pattern to the electronic device to be tested in this state, and controlling a power consumption of a heater so that total power of a power consumption of the electronic device to be tested by the test pattern and a power consumption of the heater becomes a constant value.

摘要翻译： 按照要测试的电子设备（2）接触端子（132a和132b），同时将具有相同或接近的温度变化特性的加热器（112）与被测试的电子设备的测试图案相连， 并且控制加热器的功率消耗，使得由测试图案测试的电子设备的功耗和加热器的功率消耗的总功率变为恒定值。

公开(公告)号：US08036048B2

公开(公告)日：2011-10-11

申请号：US12256653

申请日：2008-10-23

申请人： Hiroyuki Takahashi ,  Hidetaka Natsume

发明人： Hiroyuki Takahashi ,  Hidetaka Natsume

IPC分类号： G11C7/00

CPC分类号： G11C11/4085 ,  G11C5/14 ,  G11C8/08 ,  G11C11/409 ,  G11C11/4091

摘要： A semiconductor integrated circuit according to one aspect of the present invention may includes a plurality of driving circuits to drive a respective plurality of word lines with either a first voltage supplied from a first power supply or a second voltage supplied from a second power supply in accordance with a control signal, and a plurality of gate transistors in each of which a gate is connected to one of the plurality of word lines, and a connection state between a storage node and a bit line is changed based on the voltage provided to the word line connected to the gate. In the semiconductor integrated circuit, a gate oxide film of each of the plurality of gate transistors is thinner than a gate oxide film of each of transistors constituting the plurality of driving circuits.

摘要翻译： 根据本发明的一个方面的半导体集成电路可以包括多个驱动电路，用于根据第一电源提供的第一电压或从第二电源提供的第二电压驱动相应的多个字线 具有控制信号，以及多个栅极晶体管，其中每个栅极连接到多条字线中的一条字线，并且存储节点和位线之间的连接状态基于提供给字的电压而改变 线连接到门。 在半导体集成电路中，多个栅极晶体管的栅极氧化膜比构成多个驱动电路的晶体管的栅极氧化膜薄。

公开(公告)号：US08022518B2

公开(公告)日：2011-09-20

申请号：US12759008

申请日：2010-04-13

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/495

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

摘要翻译： 提供一种具有高散热性和安装连接可靠性的新型半导体器件。 半导体器件包括半导体芯片，用于密封半导体芯片的树脂密封构件，连接到形成在半导体芯片的第一主表面上的第一电极的第一导电构件和连接到形成在半导体芯片上的第二电极的第二导电构件 与半导体芯片的第一主表面相对的第二主表面，第一导电构件从树脂密封构件的第一主表面露出，并且第二导电构件从与第一主表面相对的第二主表面露出 树脂密封构件的侧面和树脂密封构件的侧面。

公开(公告)号：US08019248B2

公开(公告)日：2011-09-13

申请号：US12695302

申请日：2010-01-28

申请人： Hiroyuki Takahashi

发明人： Hiroyuki Takahashi

IPC分类号： G03G21/00

CPC分类号： G03G15/6567 ,  G03G15/235 ,  G03G2215/00561 ,  G03G2215/00708

摘要： An upper conveyance guide is provided at an apparatus main body. A guide surface of a lower conveyance guide is provided facing a guide surface of the upper conveyance guide, and can be drawn out in the direction intersecting the sheet conveyance direction with respect to the apparatus main body. A cleaning unit is provided on the backside in the drawing-out direction of the lower conveyance guide, moves together with the lower conveyance guide when the lower conveyance guide is drawn out from the apparatus main body, and cleans the guide surface of the upper conveyance guide.

摘要翻译： 在输送装置主体上设有上输送引导件。 下部输送引导件的引导表面设置成面向上部输送引导件的引导表面，并且可以相对于装置主体沿与纸张输送方向相交的方向被拉出。 在下部输送引导件的拉出方向的背面设置有清洁单元，当下部输送引导件从设备主体抽出时，与下部输送引导件一起移动，并且清洁上部输送器的引导表面 指南。

公开(公告)号：US08012305B2

公开(公告)日：2011-09-06

申请号：US12196670

申请日：2008-08-22

申请人： Hiroyuki Takahashi

发明人： Hiroyuki Takahashi

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.

摘要翻译： 描述了用于等离子体处理系统的排气组件，由此在处理空间和室排气口之间的排气组件中形成二次等离子体，以便减少对真空泵系统的等离子体泄漏，或提高处理等离子体的均匀性 ， 或两者。 排气组件包括与接地电极组合的动力排气板用于形成围绕在等离子体处理系统中处理的衬底的周边边缘的次级等离子体。

公开(公告)号：US20110096596A1

公开(公告)日：2011-04-28

申请号：US12912309

申请日：2010-10-26

申请人： Hiroyuki Takahashi ,  Naoki Ookuma

发明人： Hiroyuki Takahashi ,  Naoki Ookuma

IPC分类号： G11C11/34

CPC分类号： G11C5/147 ,  G11C11/4074 ,  G11C11/4094

摘要： A semiconductor memory device includes: a memory cell array provided with a plurality of memory cells in a matrix; and a power supply circuit configured to supply an intermediate voltage between a power supply voltage and a ground voltage to each of the plurality of memory cells. The power supply circuit includes: a first intermediate voltage generating circuit configured to generate a first intermediate voltage between the power supply voltage and the ground voltage; a second intermediate voltage generating circuit configured to generate a second intermediate voltage between the power supply voltage and the ground voltage; a first output node to which the first intermediate voltage is supplied; a second output node to which the second intermediate voltage is supplied; and a connection control circuit provided between the first output node and the second output node. The first intermediate voltage generating circuit supplies the first intermediate voltage in response to a first control signal, and the second intermediate voltage generating circuit stops its operation in response to the first control signal. The connection control circuit connects the first output node and the second output node when the second intermediate voltage generating circuit stops its operation.

摘要翻译： 半导体存储器件包括：以矩阵形式设置有多个存储单元的存储单元阵列; 以及电源电路，被配置为向所述多个存储单元中的每一个提供电源电压和接地电压之间的中间电压。 电源电路包括：第一中间电压产生电路，被配置为在电源电压和接地电压之间产生第一中间电压; 第二中间电压产生电路，被配置为在电源电压和接地电压之间产生第二中间电压; 提供第一中间电压的第一输出节点; 提供第二中间电压的第二输出节点; 以及连接控制电路，设置在第一输出节点和第二输出节点之间。 第一中间电压产生电路响应于第一控制信号提供第一中间电压，并且第二中间电压产生电路响应于第一控制信号停止其操作。 当第二中间电压产生电路停止工作时，连接控制电路连接第一输出节点和第二输出节点。

公开(公告)号：US07877161B2

公开(公告)日：2011-01-25

申请号：US10736983

申请日：2003-12-17

申请人： Masayuki Tomoyasu ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

发明人： Masayuki Tomoyasu ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

IPC分类号： G06F19/00 ,  H01L21/302

CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/67248 ,  H01L22/20

摘要： A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

摘要翻译： 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

公开(公告)号：US20100302894A1

公开(公告)日：2010-12-02

申请号：US12773404

申请日：2010-05-04

申请人： Hiroyuki Takahashi ,  Masahiro Yoshida ,  Noriaki Takeda

发明人： Hiroyuki Takahashi ,  Masahiro Yoshida ,  Noriaki Takeda

IPC分类号： G11C8/08 ,  G11C5/14

CPC分类号： G11C13/0028 ,  G11C8/08 ,  G11C8/10

摘要： A first exemplary aspect of the present invention is a word line selection circuit where address decode signals composed of a power supply voltage and a first voltage lower than a ground voltage are input, and that a word line selection signal composed of the first voltage and a second voltage higher than the power supply voltage is output not via a level shift circuit according to the address decode signals.

摘要翻译： 本发明的第一示例性方面是字线选择电路，其中输入由电源电压和低于地电压的第一电压组成的地址解码信号，并且由第一电压和第一电压组成的字线选择信号 高于电源电压的第二电压不是通过根据地址解码信号的电平移位电路输出的。