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    Mask and manufacturing method thereof and exposure method
    51.
    发明授权
    Mask and manufacturing method thereof and exposure method 有权
    掩模及其制造方法及曝光方法

    公开(公告)号：US07399558B2

    公开(公告)日：2008-07-15

    申请号：US10896538

    申请日：2004-07-22

    申请人： Kenji Yamazoe ,  Kenji Saitoh

    发明人： Kenji Yamazoe ,  Kenji Saitoh

    IPC分类号： G03F1/00 ,  G03C5/00

    CPC分类号： G03F1/36

    摘要： A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a member to be exposed is projected via a projection optical system, said method comprising a selecting step for selecting one of the following three supplementary patterns, a first supplementary pattern wherein said supplementary pattern is disposed at a position where a line extending in the vertical direction as to the pitch direction from a certain desired pattern hole of said desired pattern, and a line connecting the supplementary pattern hole closest to said certain desired pattern hole in the vertical direction with said certain desired pattern hole, intersect at an angle of 0°, a second supplementary pattern wherein said angle is 0° or more but less than 45°, and a third supplementary pattern wherein said supplementary pattern supplementary pattern is disposed at a position where said is disposed at a position where said angle is 45°.

    摘要翻译： 照射适用于曝光方法的掩模制造方法，其中排列有期望图案和具有小于期望图案的图案的辅助图案的掩模，并且将通过掩模的光穿过待暴露的构件是 通过投影光学系统投影，所述方法包括选择步骤，用于选择以下三个补充图案中的一个：第一补充图案，其中所述辅助图案设置在从垂直方向延伸的关于俯仰方向的线的位置 所述期望图案的特定期望图形孔和将所述特定所需图案孔最靠近所述特定期望图案孔的所述图案孔与所述特定所需图案孔连接的线以0°的角度相交，第二辅助图案，其中所述 辅助图案设置在所述角度为0°以上且小于45°的位置 °和第三辅助图案，其中所述辅助图案设置在所述角度为45°的位置。

    Exposure method and apparatus
    54.
    发明申请
    Exposure method and apparatus 失效

    公开(公告)号：US20060033900A1

    公开(公告)日：2006-02-16

    申请号：US11255559

    申请日：2005-10-21

    申请人： Kenji Saitoh ,  Miyoko Kawashima

    发明人： Kenji Saitoh ,  Miyoko Kawashima

    IPC分类号： G03C5/00 ,  G03B27/42 ,  G03F1/00

    CPC分类号： G03F1/30 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70283 ,  G03F7/70433

    摘要： There is provided an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern, a part of the desired pattern to be resolved by effects of the dummy pattern being thicker than the dummy pattern's line width, illuminating the phase shift mask by using illumination light having a peak near or on an optical axis in an intensity distribution to transfer the desired pattern onto the exposure plane by projecting light having passed through the phase shift mask onto the exposure plane.

    Mask and manufacturing method thereof and exposure method
    55.
    发明申请
    Mask and manufacturing method thereof and exposure method 有权
    掩模及其制造方法及曝光方法

    公开(公告)号：US20050037267A1

    公开(公告)日：2005-02-17

    申请号：US10896538

    申请日：2004-07-22

    申请人： Kenji Yamazoe ,  Kenji Saitoh

    发明人： Kenji Yamazoe ,  Kenji Saitoh

    IPC分类号： G03C5/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/82 ,  H01L21/822 ,  H01L27/04

    CPC分类号： G03F1/36

    摘要： A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a member to be exposed is projected via a projection optical system, said method comprising a selecting step for selecting one of the following three supplementary patterns, a first supplementary pattern wherein said supplementary pattern is disposed at a position where a line extending in the vertical direction as to the pitch direction from a certain desired pattern hole of said desired pattern, and a line connecting the supplementary pattern hole closest to said certain desired pattern hole in the vertical direction with said certain desired pattern hole, intersect at an angle of 0°, a second supplementary pattern wherein said supplementary pattern is disposed at a position where said angle is 0° or more but less than 45°, and a third supplementary pattern wherein said supplementary pattern is disposed at a position where said angle is 45°.

    摘要翻译： 照射适用于曝光方法的掩模制造方法，其中排列有期望图案和具有小于期望图案的图案的辅助图案的掩模，并且将通过掩模的光穿过待暴露的构件是 通过投影光学系统投影，所述方法包括选择步骤，用于选择以下三个补充图案中的一个：第一补充图案，其中所述辅助图案设置在从垂直方向延伸的关于俯仰方向的线的位置 所述期望图案的特定期望图形孔和将所述特定所需图案孔最靠近所述特定期望图案孔的所述图案孔与所述特定所需图案孔连接的线以0°的角度相交，第二辅助图案，其中所述 辅助图案设置在所述角度为0°以上且小于45°的位置 °和第三辅助图案，其中所述辅助图案设置在所述角度为45°的位置。

    Method of manufacturing non-volatile semiconductor memory having erasing gate
    56.
    发明授权
    Method of manufacturing non-volatile semiconductor memory having erasing gate 失效
    制造具有擦除栅极的非易失性半导体存储器的方法

    公开(公告)号：US5846861A

    公开(公告)日：1998-12-08

    申请号：US740507

    申请日：1996-10-30

    申请人： Kenji Saitoh

    发明人： Kenji Saitoh

    IPC分类号： H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11543

    摘要： In a method of manufacturing non-volatile semi-conductor memory including a memory cell transistor and a peripheral transistor, a floating gate and a control gate of the memory cell transistor is formed on a semiconductor substrate and a gate electrode of the peripheral transistor is formed on the semiconductor substrate. The control gate and gate electrode are covered with first and second insulating layers, respectively. A conductive layer is deposited to cover the first and second insulating layers. The conductive layer is etched back until the first and second insulating layers are exposed. An erasing gate of the memory cell transistor is formed by leaving the conductive layer on the insulating layer. A first mask layer on the second insulating layer and a second mask layer on the erasing gate is formed. The conductive layer remaining in the regions outside the masks is removed.

    摘要翻译： 在制造包括存储单元晶体管和外围晶体管的非易失性半导体存储器的方法中，在半导体衬底上形成存储单元晶体管的浮置栅极和控制栅极，并且形成外围晶体管的栅电极 在半导体衬底上。 控制栅极和栅电极分别被第一绝缘层和第二绝缘层覆盖。 沉积导电层以覆盖第一和第二绝缘层。 将导电层回蚀刻直到暴露第一​​和第二绝缘层。 通过在绝缘层上留下导电层来形成存储单元晶体管的擦除栅极。 形成第二绝缘层上的第一掩模层和擦除栅极上的第二掩模层。 残留在掩模外的区域中的导电层被去除。

    Non-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another group
    58.
    发明授权
    Non-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another group 失效
    具有存储单元组的非易失性半导体存储器件，其作为用于替换另一组的冗余存储单元组

    公开(公告)号：US5523976A

    公开(公告)日：1996-06-04

    申请号：US388453

    申请日：1995-02-14

    申请人： Takeshi Okazawa ,  Kenji Saitoh

    发明人： Takeshi Okazawa ,  Kenji Saitoh

    IPC分类号： G11C17/00 ,  G11C16/04 ,  G11C16/06 ,  G11C29/00 ,  G11C29/04 ,  H01L21/8247 ,  H01L27/115 ,  G11C7/00

    CPC分类号： G11C29/808 ,  G11C29/82

    摘要： A plurality of semiconductor memory cells are arranged in the form of a matrix and capable of electrically erasing and re-programming. Each of word lines is provided commonly to the memory cells in each row of the matrix and commonly connected to the gates of these memory cells, and each of bit lines is provided commonly to the memory cells in each column of the matrix and commonly connected to the drains of these memory cells. Each of common source lines is commonly connected to the sources of the memory cells in each pair of adjacent rows of the matrix. A memory cell group in a predetermined row or row pair of the matrix is operative as a redundant memory cell group for replacement of the other group.

    摘要翻译： 多个半导体存储单元以矩阵的形式布置，并且能够电擦除和重新编程。 每个字线被共同地提供给矩阵的每一行中的存储器单元，并且通常连接到这些存储器单元的栅极，并且每个位线被共同地提供给矩阵的每列中的存储器单元，并且通常连接到 这些记忆单元的下水道。 每个公共源极线通常连接到矩阵的每对相邻行中的存储器单元的源极。 矩阵的预定行或行对中的存储单元组可用作用于替换另一组的冗余存储单元组。

    Position detecting system
    59.
    发明授权
    Position detecting system 失效
    位置检测系统

    公开(公告)号：US5455679A

    公开(公告)日：1995-10-03

    申请号：US384221

    申请日：1995-02-06

    申请人： Sakae Houryu ,  Kenji Saitoh

    发明人： Sakae Houryu ,  Kenji Saitoh

    IPC分类号： G03F9/00 ,  G01B11/27 ,  G01N21/86

    CPC分类号： G03F9/70

    摘要： A position detecting system includes a light source for producing a light beam for irradiating a reference mark formed on an object which is relatively displaceable relative to the light beam, a detector for detecting a light quantity distribution of the light from the reference mark, and a circuit for comparing a first light quantity distribution at a first position with a second light quantity distribution at a second position spaced from the first position by a predetermined distance, and for determining a reference position of the object on the basis of the comparison.

    摘要翻译： 位置检测系统包括：光源，用于产生用于照射形成在物体上的参考标记的光束，所述参考标记相对于所述光束相对移位;检测器，用于检测来自所述参考标记的光的光量分布;以及 电路，用于将第一位置处的第一光量分布与在与第一位置隔开预定距离的第二位置处的第二光量分布进行比较，并且用于基于比较来确定对象的参考位置。

    Position detecting method and apparatus including Fraunhofer diffraction detector
    60.
    发明授权
    Position detecting method and apparatus including Fraunhofer diffraction detector 失效
    位置检测方法和装置，包括弗劳恩霍夫衍射检测器

    公开(公告)号：US5325176A

    公开(公告)日：1994-06-28

    申请号：US875601

    申请日：1992-04-28

    申请人： Shigeyuki Suda ,  Kenji Saitoh ,  Masakazu Matsugu ,  Naoto Abe ,  Minoru Yoshii ,  Ryo Kuroda

    发明人： Shigeyuki Suda ,  Kenji Saitoh ,  Masakazu Matsugu ,  Naoto Abe ,  Minoru Yoshii ,  Ryo Kuroda

    IPC分类号： G03F9/00 ,  G01B11/02

    CPC分类号： G03F9/7076

    摘要： A device usable with a first object and a second object at least one of which is provided with a diffraction grating, for detecting the position of the second object relative to the first object, is disclosed. The device includes a light source for projecting a position detecting beam upon the first object; a beam detecting portion for receiving the position detecting beam after it is directed from the first object and being incident on the second object, the beam detecting portion receiving the position detecting beam to detect the position of the second object relative to the first object; wherein at least one diffraction grating is disposed in the path of the position detecting beam to be received by the beam detecting portion, which diffraction grating is effective to diffract the position detecting beam at least twice and wherein the beam detecting portion is disposed at a site effective not to receive unwanted diffraction light produced from the or at least one diffraction grating.

    摘要翻译： 公开了一种可用于第一物体和第二物体的装置，其中至少一个具有用于检测第二物体相对于第一物体的位置的衍射光栅。 该装置包括用于将位置检测光束投射到第一物体上的光源; 光束检测部分，用于在从第一物体引导之后接收位置检测光束并入射到第二物体上，光束检测部分接收位置检测光束以检测第二物体相对于第一物体的位置; 其中至少一个衍射光栅设置在所述位置检测光束的路径中，以由所述光束检测部分接收，所述衍射光栅有效地将所述位置检测光束衍射至少两次，并且其中所述光束检测部分设置在位置 有效地不接收由该至少一个衍射光栅产生的不想要的衍射光。