公开(公告)号：US06717845B2

公开(公告)日：2004-04-06

申请号：US10345253

申请日：2003-01-16

申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

IPC分类号： G11C1115

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

公开(公告)号：US5032528A

公开(公告)日：1991-07-16

申请号：US538764

申请日：1990-06-15

申请人： Yoshiaki Asao ,  Shizuo Sawada

发明人： Yoshiaki Asao ,  Shizuo Sawada

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/31662 ,  H01L21/76802

摘要： Regions having different impurity concentrations are formed in the main surface region of the semiconductor substrate. Accordingly, when the substrate is oxidized, oxide films having different thickness are formed. More specifically, the oxide film is formed more deeply on the surface region of the substrate having a high impurity concentration in which ions are injected than on the surface region in which no ions are injected. In the etching step, since the thinner oxide film is removed while the thicker oxide film remains, the surface of the region under the thinner oxide film is exposed, and thus a contact hole is formed. If, in the step of forming a contact hole, a portion of the thinner oxide film is covered by a resist pattern, only the regiion of the oxide film which is not masked by the resist pattern is etched and the substrate surface thereunder is exposed, and thus a contact hole is formed.

公开(公告)号：US09035402B2

公开(公告)日：2015-05-19

申请号：US13963710

申请日：2013-08-09

申请人： Yoshiaki Asao ,  Hideaki Harakawa

发明人： Yoshiaki Asao ,  Hideaki Harakawa

IPC分类号： H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  H01L43/08

摘要： According to one embodiment, a semiconductor memory device comprises a cell transistor includes a first gate electrode buried in a semiconductor substrate and a first diffusion layer and a second diffusion layer formed to sandwich the first gate electrode, a first lower electrode formed on the first diffusion layer, a magnetoresistive element formed on the first lower electrode to store data according to a change in a magnetization state and connected to a bit line located above, a second lower electrode formed on the second diffusion layer, and a first contact formed on the second lower electrode and connected to a source line located above. A contact area between the second lower electrode and the second diffusion layer is larger than a contact area between the first contact and the second lower electrode.

摘要翻译： 根据一个实施例，一种半导体存储器件包括：单元晶体管，包括埋在半导体衬底中的第一栅电极和形成为夹着第一栅电极的第一扩散层和第二扩散层;形成在第一扩散层上的第一下电极 层，形成在所述第一下电极上以根据磁化状态的变化存储数据并连接到位于上方的位线的磁阻元件，形成在所述第二扩散层上的第二下电极，以及形成在所述第二扩散层上的第一触点 下电极并连接到位于上方的源极线。 第二下部电极和第二扩散层之间的接触面积大于第一接触部和第二下部电极的接触面积。

公开(公告)号：US08724377B2

公开(公告)日：2014-05-13

申请号：US13423700

申请日：2012-03-19

申请人： Takaya Yamanaka ,  Susumu Shuto ,  Yoshiaki Asao

发明人： Takaya Yamanaka ,  Susumu Shuto ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/12

摘要： According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.

摘要翻译： 根据一个实施例，存储器件包括：第一信号线; 第二信号线; 晶体管 第一存储区; 和第二存储器区域。 晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。 第一存储区具有第一磁隧道结元件。 当电流沿一个方向流动时，其磁化方向变得平行，并且当另一个方向上的电流时，磁化方向变得反平行。 第二存储器区域具有第二磁性隧道结元件。 当电流沿一个方向流动时，其磁化方向变得平行，并且当电流在另一个第一方向上流动时，其磁化方向变得反平行。

公开(公告)号：US20120281461A1

公开(公告)日：2012-11-08

申请号：US13419258

申请日：2012-03-13

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/16

CPC分类号： G11C5/063 ,  G11C11/161 ,  G11C11/1659

摘要： A memory includes MTJ elements. Active areas are separated to correspond to cell transistors, respectively, and extend in a first direction substantially orthogonal to an extending direction of gates of the cell transistors. The active areas are arranged in the first direction and constitute a plurality of active area columns. Two active area columns adjacent in a second direction are arranged to be half-pitch staggered in the first direction. As viewed from above surfaces of the active areas, each MTJ element is arranged to overlap with one end of each of the active areas. The first and second wirings extend while being folded back in a direction inclined with respect to the first and second directions in order to overlap with the MTJ elements alternately in the adjacent active area columns.

摘要翻译： 内存包括MTJ元素。 有源区域分别对应于单元晶体管，并且在与单元晶体管的栅极的延伸方向基本正交的第一方向上延伸。 有源区域沿第一方向布置并且构成多个有效区域列。 在第二方向相邻的两个有效区列被布置为在第一方向上半间距交错。 从有源区域的上表面观察，每个MTJ元件被布置成与每个有源区域的一端重叠。 第一和第二布线在相对于第一和第二方向倾斜的方向被折回的同时延伸，以便在相邻的有效区域列中交替地与MTJ元件重叠。

公开(公告)号：US08164147B2

公开(公告)日：2012-04-24

申请号：US12022473

申请日：2008-01-30

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： H01L29/82

CPC分类号： H01L27/228

摘要： A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line, and running in a first direction in which the first bit line and the second bit line run, a first magnetoresistive effect element connected to the first bit line, a second magnetoresistive effect element connected to the second bit line, a first transistor connected in series with the first magnetoresistive effect element, and a second transistor connected in series with the second magnetoresistive effect element. A first cell having the first magnetoresistive effect element and the first transistor and a second cell having the second magnetoresistive effect element and the second transistor are connected together to the source line.

摘要翻译： 磁性随机存取存储器包括第一位线和第二位线，对于具有与第一位线相邻的第一位线和第二位线的组形成的源极线，并且沿第一方向运行，其中， 第一位线和第二位线运行，连接到第一位线的第一磁阻效应元件，连接到第二位线的第二磁阻效应元件，与第一磁阻效应元件串联连接的第一晶体管， 晶体管与第二磁阻效应元件串联连接。 具有第一磁阻效应元件和第一晶体管的第一单元和具有第二磁阻效应元件和第二晶体管的第二单元连接在源极线上。

公开(公告)号：US08009456B2

公开(公告)日：2011-08-30

申请号：US12350477

申请日：2009-01-08

申请人： Naoharu Shimomura ,  Yoshiaki Asao

发明人： Naoharu Shimomura ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/0028 ,  G11C13/003 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/74

摘要： A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.

摘要翻译： 电阻变化型存储器包括第一，第二和第三驱动线，电阻改变元件，其一端连接到第三驱动线，第一二极管，具有连接到第一驱动线的阳极和连接到第一驱动线的另一端的阴极 电阻变化元件，具有连接到第一电阻变化元件的另一端的阳极和连接到第二驱动线的阴极的第二二极管，以及向电阻变化元件提供写入电流的驱动器/沉降片。 写控制电路被布置成使得当第一数据被写入时，使写入电流在从第一驱动线到第三驱动线的方向上流动，并且当写入第二数据时，使写入电流流入 从第三驱动线到第二驱动线的方向。

公开(公告)号：US20110068401A1

公开(公告)日：2011-03-24

申请号：US12881415

申请日：2010-09-14

申请人： Takashi Izumida ,  Nobutoshi Aoki ,  Masaki Kondo ,  Yoshiaki Asao ,  Satoshi Inaba

发明人： Takashi Izumida ,  Nobutoshi Aoki ,  Masaki Kondo ,  Yoshiaki Asao ,  Satoshi Inaba

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L29/66795

摘要： A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region in which an impurity concentration of lower portions of side surfaces facing each other in sides forming the first distance is higher than an impurity concentration of lower portions of side surfaces facing each other in sides forming the second distance.

摘要翻译： 实施例的半导体器件包括基板和形成在基板上的多个翅片。 多个翅片被布置成使得比第一距离窄的第一距离和第二距离被重复。 另外，多个散热片包括半导体区域，其中在形成第一距离的侧面中彼此面对的侧面的下部的杂质浓度高于形成第一距离的侧面彼此相对的侧表面的下部的杂质浓度 第二距离。

公开(公告)号：US20090250735A1

公开(公告)日：2009-10-08

申请号：US12408553

申请日：2009-03-20

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： H01L27/115

CPC分类号： H01L27/228 ,  G11C11/1655 ,  G11C11/1659 ,  G11C13/00 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/24

摘要： A semiconductor memory according to an embodiment of the present invention including first and second adjacent bit lines extending in a first direction and provided in the same interconnect layer, an active provided in a memory cell array, a first and second adjacent word lines extending in a second direction intersecting the first direction, a cell group having two transistor provided in the active region and two resistive storage element, wherein the active region has a striped structure, and extends from one end of the memory cell array to the other.

摘要翻译： 根据本发明的实施例的半导体存储器包括在第一方向上延伸并且设置在相同的互连层中的第一和第二相邻位线，设置在存储单元阵列中的有源，第一和第二相邻字线 与第一方向相交的第二方向，具有设置在有源区中的两个晶体管的单元组和两个电阻存储元件，其中有源区具有条纹结构，并且从存储单元阵列的一端延伸到另一个。

公开(公告)号：US07333359B2

公开(公告)日：2008-02-19

申请号：US10419873

申请日：2003-04-22

申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11C11/00

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/06 ,  H01F10/3254

摘要： A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.

摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且写字线的侧表面和下表面涂覆有硬磁材料和轭材料。 硬磁材料被通过写入字线的剩余电流磁化，并且通过剩余磁化来校正MTJ元件的特性。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向相交的Y方向上延伸，并且数据选择线的表面的一部分涂覆有轭材料。