公开(公告)号：US20100202688A1

公开(公告)日：2010-08-12

申请号：US12694824

申请日：2010-01-27

申请人： Jie Yu ,  Julia Ebling ,  Hartmut Loos

发明人： Jie Yu ,  Julia Ebling ,  Hartmut Loos

IPC分类号： G06K9/34 ,  H04N7/18

CPC分类号： G06T7/215 ,  G06T7/11 ,  G06T7/187 ,  G06T2207/10016 ,  G06T2207/30261

摘要： A device for segmenting an object in an image, in which a surveillance region containing one or more objects is depicted or depictable in image, has an estimating module which is designed to estimate a distance in the surveillance region based on a possible object pixel of object in image, a segmenting module which is designed to segment object containing object pixel according to a segmentation strategy, and a strategy module which is programmed and/or electronically configured to adapt the segmentation strategy to object depending on the estimated distance.

摘要翻译： 用于分割图像中的对象的装置，其中包含一个或多个对象的监视区域在图像中被描绘或可描绘，具有估计模块，其被设计为基于对象的可能对象像素来估计监视区域中的距离 一种分割模块，其被设计为根据分割策略来分割包含对象像素的对象，以及策略模块，其被编程和/或电子地配置为根据所估计的距离来使分割策略适应对象。

公开(公告)号：US20100121566A1

公开(公告)日：2010-05-13

申请号：US12266863

申请日：2008-11-07

申请人： Dhiraj Joshi ,  Jiebo Luo ,  Jie Yu

发明人： Dhiraj Joshi ,  Jiebo Luo ,  Jie Yu

IPC分类号： G01C21/34

CPC分类号： G01C21/3453 ,  G01C21/20 ,  G01C21/26 ,  G01C21/3461 ,  G01C21/3476 ,  G01C21/3641 ,  G01C21/3688 ,  G08G1/096716

摘要： A method of computing at least one photogenic route from a starting location to a destination location, including; computing photogenic values for images in a large collection representing a geographic region that includes the starting location and the destination location; computing a photogenic index for each route segment based on computed photogenic values of images taken along the route segment; computing at least one photogenic route from the starting location to the destination location and presenting the route(s) to a user

摘要翻译： 一种计算从起始位置到目的地位置的至少一个光生路径的方法，包括： 计算代表包括起始位置和目的地位置的地理区域的大集合中的图像的光生值; 基于沿着路线段拍摄的图像的计算的光生值计算每个路线段的光生指数; 计算从起始位置到目的地位置的至少一个光生路线，并将路线呈现给用户

公开(公告)号：US20090052715A1

公开(公告)日：2009-02-26

申请号：US11843694

申请日：2007-08-23

申请人： Bo Zhang ,  Jie Yu ,  Ming Zhang

发明人： Bo Zhang ,  Jie Yu ,  Ming Zhang

IPC分类号： H04R17/02 ,  H04R3/00

CPC分类号： H04R1/406 ,  H04R2499/11

摘要： An electronic device includes a front cover, a circuit board, a plurality of flexible holders, and a plurality of microphones. The front cover includes a plurality of wall portions, a plurality of storage spaces encircled by the wall portions, and a plurality of acoustic openings connecting to the storage spaces. The flexible holders have hollow bodies squeezed into the storage spaces. The microphones are electrically connected to the circuit board and squeezed into the hollow bodies of the flexible holders.

摘要翻译： 电子设备包括前盖，电路板，多个柔性保持器和多个麦克风。 前盖包括多个壁部，由壁部包围的多个存放空间，以及连接到存放空间的多个声学开口。 柔性支架具有挤压入储存空间的中空体。 麦克风电连接到电路板并挤压到柔性保持器的中空体中。

公开(公告)号：US20070134261A1

公开(公告)日：2007-06-14

申请号：US11400411

申请日：2006-04-07

申请人： Robert Hancock ,  B. Finlay ,  Monisha Gough Scott ,  Dawn Bowdish ,  Carrie Rosenberger ,  Jon-Paul Steven Powers ,  Jie Yu ,  Neeloffer Mookherjee

发明人： Robert Hancock ,  B. Finlay ,  Monisha Gough Scott ,  Dawn Bowdish ,  Carrie Rosenberger ,  Jon-Paul Steven Powers ,  Jie Yu ,  Neeloffer Mookherjee

IPC分类号： A61K39/02 ,  C12Q1/68

CPC分类号： A61K38/10 ,  A61K38/1709 ,  A61K38/193 ,  C07K7/08 ,  C07K14/4723 ,  C07K14/521 ,  C07K14/7158 ,  C12Q1/6883 ,  C12Q2600/106 ,  C12Q2600/136 ,  C12Q2600/158 ,  G01N33/5047 ,  G01N33/505 ,  G01N33/564 ,  G01N2500/00 ,  G01N2800/26 ,  A61K2300/00

摘要： The present invention provides a method of identifying agents that enhance innate immunity in a subject. The invention further provides a method of selectively supressing sepsis by suppressing expression of a proinflammatory gene while maintaining expression of an anti-inflammatory gene. Also provided are methods of identifying a polynucleotide or pattern of polynucleotides regulated by one or more sepsis or inflammatory inducing agents and inhibited by a peptide is described, methods of identifying a pattern of polynucleotide expression for inhibition of an inflammatory or septic response, and compounds and agents identified by the methods of the invention.

摘要翻译： 本发明提供一种识别增强受试者中先天免疫力的药剂的方法。 本发明还提供了通过抑制促炎基因的表达同时保持抗炎基因的表达来选择性抑制败血症的方法。 还提供了鉴定由一种或多种败血症或炎性诱导剂调节并被肽抑制的多核苷酸的多核苷酸或图案的方法，描述了鉴定抑制炎性或败血病应答的多核苷酸表达模式的方法，以及化合物和 通过本发明的方法鉴定的试剂。

公开(公告)号：US07050254B1

公开(公告)日：2006-05-23

申请号：US11056201

申请日：2005-02-11

申请人： Jie Yu ,  Hasnorhafiza Husni ,  Jian Chen ,  Hong Wan Tham

发明人： Jie Yu ,  Hasnorhafiza Husni ,  Jian Chen ,  Hong Wan Tham

IPC分类号： G11B5/02

CPC分类号： G11B5/40 ,  G11B25/043 ,  G11B33/144

摘要： Disclosed is a disk drive that provides for internal disk drive temperature estimation. The disk drive includes an actuator, a head attached to the actuator, a disk to store data, a preamplifier connected to the head to amplify read and write signals, and a processor for controlling operations in the disk drive including moving the actuator such that the head is moved to read data from and write data to the disk. The processor under the control of a program is further utilized to calculate a junction temperature (JTemp) based on a breakthrough voltage of the preamplifier, apply a filter to the calculated JTemp to compensate for temperature noise, and to estimate an internal disk drive temperature based upon the filtered JTemp.

摘要翻译： 公开了一种提供内部盘驱动器温度估计的磁盘驱动器。 磁盘驱动器包括致动器，连接到致动器的磁头，用于存储数据的磁盘，连接到磁头的放大器以放大读取和写入信号的前置放大器，以及用于控制磁盘驱动器中的操作的处理器，包括移动致动器， 磁头被移动以从数据读取数据并将数据写入磁盘。 在程序控制下的处理器进一步用于基于前置放大器的穿越电压来计算结温（J Temp ），将滤波器应用于计算出的温度以补偿温度噪声，并根据过滤的温度来估计内部磁盘驱动器的温度。

公开(公告)号：US06294480B1

公开(公告)日：2001-09-25

申请号：US09443427

申请日：1999-11-19

申请人： Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Minghui Fan ,  Chiew Wah Yap

发明人： Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Minghui Fan ,  Chiew Wah Yap

IPC分类号： H01L2131

CPC分类号： H01L29/6653 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/6659

摘要： A method for forming an L-shaped spacer using a sacrificial organic top coating. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiment, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer.

摘要翻译： 一种使用牺牲有机顶涂层形成L形间隔件的方法。 提供其上具有栅极结构的半导体结构。 在栅极结构上形成衬里氧化物层。 介电间隔层形成在衬垫氧化物层上。 在优选实施例中，电介质间隔层包括氮化硅层或氮氧化硅层。 在电介质间隔层上形成牺牲有机层。 牺牲有机层和电介质间隔层被各向异性蚀刻以形成包括三角形牺牲有机结构和L形介电间隔物的间隔物。 去除三角形牺牲有机结构留下L形介电隔离物。

公开(公告)号：US06228713B1

公开(公告)日：2001-05-08

申请号：US09342035

申请日：1999-06-28

申请人： Yelehanka Ramachandramurthy Pradeep ,  Vijay Kumar Chhagan ,  Jie Yu ,  Mei Sheng Zhou

发明人： Yelehanka Ramachandramurthy Pradeep ,  Vijay Kumar Chhagan ,  Jie Yu ,  Mei Sheng Zhou

IPC分类号： H01H21336

CPC分类号： H01L27/11521 ,  H01L21/76224

摘要： A method to make a self-aligned floating gate in a memory device. The method patterns the floating gate (FG) using the trench etch for the shallow trench isolation (STI). Because the floating gate (FG) is adjacent to the raised STI, sharp corners are eliminated between the FG and CG thereby increasing the effectiveness of the intergate dielectric layer. The method includes: forming an first dielectric layer (gate oxide) and a polysilicon layer over a substrate, etching through the first dielectric oxide layer and the polysilicon layer and into the substrate to form a trench. The remaining first dielectric layer and polysilicon layer function as a tunnel dielectric layer and a floating gate. The trench is filled with an isolation layer. The masking layer is removed. An intergate dielectric layer and a control gate are formed over the floating gate and the isolation layer.

摘要翻译： 一种在存储器件中制作自对准浮动栅极的方法。 该方法使用用于浅沟槽隔离（STI）的沟槽蚀刻对浮栅（FG）进行图案化。 因为浮动栅极（FG）与凸起的STI相邻，所以在FG和CG之间消除了尖角，从而增加了栅间电介质层的有效性。 该方法包括：在衬底上形成第一介质层（栅极氧化物）和多晶硅层，蚀刻通过第一电介质氧化物层和多晶硅层并进入衬底以形成沟槽。 剩余的第一电介质层和多晶硅层用作隧道电介质层和浮栅。 沟槽填充有隔离层。 去除掩模层。 在浮栅和隔离层上形成隔间电介质层和控制栅极。

公开(公告)号：US06211008B1

公开(公告)日：2001-04-03

申请号：US09528241

申请日：2000-03-17

申请人： Jie Yu ,  Yelehanka Ramachandramurthy Pradeep ,  Henry Gerung ,  Jun Qian

发明人： Jie Yu ,  Yelehanka Ramachandramurthy Pradeep ,  Henry Gerung ,  Jun Qian

IPC分类号： H01L218242

CPC分类号： H01L28/91

摘要： A method for fabricating a high-density high-capacity capacitor is described. A dielectric layer is provided overlying a semiconductor substrate. A sacrificial layer is deposited overlying the dielectric layer and patterned to form a pattern having a large surface area within a small area on the substrate. In one alternative, spacers are formed on sidewalls of the patterned sacrificial layer. Thereafter, the sacrificial layer is removed. A bottom capacitor plate layer is conformally deposited overlying the spacers. In a second alternative, a bottom capacitor plate layer is deposited overlying the patterned sacrificial layer and etched to leave spacers on sidewalls of the patterned sacrificial layer. Thereafter, the sacrificial layer is removed. In both alternatives, a capacitor dielectric layer is deposited overlying the bottom capacitor plate layer. A top capacitor plate layer is deposited overlying the capacitor dielectric layer and patterned to complete fabrication of a high-density high-capacity capacitor.

摘要翻译： 对高密度大容量电容器的制造方法进行说明。 提供覆盖在半导体衬底上的电介质层。 牺牲层沉积在电介质层上并被图案化以形成在衬底上的小区域内具有大表面积的图案。 在一个替代方案中，间隔物形成在图案化牺牲层的侧壁上。 此后，除去牺牲层。 底部电容器平板层被共形地沉积在隔离物上。 在第二替代方案中，沉积底部电容器板层，覆盖图案化的牺牲层并被蚀刻以在图案化牺牲层的侧壁上留下间隔物。 此后，除去牺牲层。 在两种替代方案中，电容器电介质层沉积在底部电容器板层上。 沉积在电容器电介质层上的顶部电容器平板层被图案化以完成高密度大容量电容器的制造。

公开(公告)号：US6156598A

公开(公告)日：2000-12-05

申请号：US460113

申请日：1999-12-13

申请人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Ying Keung Leung

发明人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Ying Keung Leung

IPC分类号： H01L21/265 ,  H01L21/311 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/66598 ,  H01L21/2652 ,  H01L21/31144 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6659

摘要： A method for forming an L-shaped spacer using a sacrificial organic top coating, then using the L-shaped spacer to simultaneously implant lightly doped source and drain extensions through the L-shaped spacer while implanting source and drain regions beyond the L-shaped spacer. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiments, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer. Impurity ions are implanted into the surface of the semiconductor structure forming lightly doped source and drain extensions where the ions are implanted through the L-shaped spacer, and forming source and drain regions beyond the L-shaped spacer where the ions are implanted without passing through the L-shaped spacer.

摘要翻译： 使用牺牲有机顶涂层形成L形间隔物的方法，然后使用L形间隔物同时将轻掺杂的源极和漏极延伸部注入L型间隔物，同时将源极和漏极区域注入超过L形间隔物 。 提供其上具有栅极结构的半导体结构。 在栅极结构上形成衬里氧化物层。 介电间隔层形成在衬垫氧化物层上。 在优选实施例中，电介质间隔层包括氮化硅层或氮氧化硅层。 在电介质间隔层上形成牺牲有机层。 牺牲有机层和电介质间隔层被各向异性蚀刻以形成包括三角形牺牲有机结构和L形介电间隔物的间隔物。 去除三角形牺牲有机结构留下L形介电隔离物。 将杂质离子注入到形成轻掺杂源极和漏极延伸部分的半导体结构的表面中，其中离子通过L形间隔物注入，并且形成超过L形间隔物的源极和漏极区域，其中离子被注入而不通过 L形间隔物。

公开(公告)号：US10772368B2

公开(公告)日：2020-09-15

申请号：US15619596

申请日：2017-06-12

申请人： Jie Yu ,  Zhihui Wang ,  Meng Nie ,  Weibin Xu ,  Haitao Li

发明人： Jie Yu ,  Zhihui Wang ,  Meng Nie ,  Weibin Xu ,  Haitao Li

IPC分类号： A41D19/04 ,  A41D19/00 ,  B29C35/02 ,  B29C41/04 ,  B29C41/38 ,  B29C41/08 ,  B29L31/48 ,  B29C41/46

摘要： The method comprises of placing the palm side of a glove mold facing up, and raising the fingers portion of glove mold up, in such a way that the glove mold is tilting up at 15°-45° in relative to horizontal position. The first pouring process is carried out by pouring silica gel liquid on the fingers portion of glove mold. Then adjust the glove mold to horizontal position, and rotate the glove mold by using its length as axis. Continue pouring silica gel liquid on the glove mold surface to carry out second pouring process. Let the silica gel liquid to be coated on the whole glove mold surface forming a semi-finished glove. Upon completion, let the glove mold to go through a dripping procedure for dripping treatment. After the dripping treatment, carry out vulcanization and cooling to obtain the corresponding silica gel glove.