公开(公告)号：US07280394B2

公开(公告)日：2007-10-09

申请号：US10863972

申请日：2004-06-09

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/34 ,  G11C11/50 ,  H01L27/20 ,  H01L29/82

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的漏极的场效应器件。 在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。 源区域连接到相应的终端。 栅极结构设置在沟道区域上并连接到相应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。 纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US07859385B2

公开(公告)日：2010-12-28

申请号：US12111442

申请日：2008-04-29

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Jonathan W. Ward

IPC分类号： H01C10/00

CPC分类号： H01C7/06 ,  H01C7/003 ,  H01C7/005 ,  H01C7/006 ,  H01C10/306 ,  H01C17/0652 ,  H01C17/232 ,  H01C17/283 ,  H01L28/22

摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。

公开(公告)号：US07782652B2

公开(公告)日：2010-08-24

申请号：US12246009

申请日：2008-10-06

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.

摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

公开(公告)号：US07777222B2

公开(公告)日：2010-08-17

申请号：US12548131

申请日：2009-08-26

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L41/00 ,  H03H9/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/725 ,  Y10S977/733 ,  Y10S977/755 ,  Y10S977/938 ,  Y10T29/49105

摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.

摘要翻译： 纳米管器件结构和制造方法。 制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

公开(公告)号：US07709880B2

公开(公告)日：2010-05-04

申请号：US11742290

申请日：2007-04-30

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L29/78

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US20100005645A1

公开(公告)日：2010-01-14

申请号：US12550975

申请日：2009-08-31

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01S4/00

CPC分类号： G11C11/412 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/943 ,  Y10T29/49002

摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.

摘要翻译： 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。 电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。 在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。 电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

公开(公告)号：US07542334B2

公开(公告)日：2009-06-02

申请号：US11971476

申请日：2008-01-09

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/41

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： A nanotube-based switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.

摘要翻译： 一种基于纳米管的开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

公开(公告)号：US07541842B2

公开(公告)日：2009-06-02

申请号：US11602795

申请日：2006-11-21

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H03K19/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/94 ,  Y10T29/49002

摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

摘要翻译： 基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。 控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。 通道至少包括所述纳米管通道元件。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。 在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。 在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。 在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

公开(公告)号：US20080186756A1

公开(公告)日：2008-08-07

申请号：US11971476

申请日：2008-01-09

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.

摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

公开(公告)号：US07301802B2

公开(公告)日：2007-11-27

申请号：US10864681

申请日：2004-06-09

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Frank Guo

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Frank Guo

IPC分类号： G11C11/50 ,  G11C11/52

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.