公开(公告)号：US06338899B1

公开(公告)日：2002-01-15

申请号：US09332440

申请日：1999-06-14

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B566

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US08605391B2

公开(公告)日：2013-12-10

申请号：US13531276

申请日：2012-06-22

申请人： Katsuhiko Koui ,  Shuichi Murakami ,  Mariko Kitazaki ,  Yusuke Tomoda ,  Norihito Fujita

发明人： Katsuhiko Koui ,  Shuichi Murakami ,  Mariko Kitazaki ,  Yusuke Tomoda ,  Norihito Fujita

IPC分类号： G11B5/33

CPC分类号： G11B5/1278 ,  G11B5/3146 ,  G11B5/746 ,  G11B2005/0024

摘要： According to one embodiment, a magnetic head has a main magnetic pole, a write-shield constituting the main magnetic pole and a magnetic circuit, and a spin torque oscillation element provided between the main magnetic pole and the write-shield. The spin torque oscillation element is provided with a first oscillation layer, a nonmagnetic spin sink layer, a second oscillation layer, a nonmagnetic intermediate layer, and a spin injection layer provided in sequence from the write-shield side to the main magnetic pole side. The nonmagnetic spin sink layer is formed of at least one element selected from the group consisting of Ru, Rh, Ta, W, Cr, Ir, Mo, Re, Nb, Pt, and Pd.

摘要翻译： 根据一个实施例，磁头具有主磁极，构成主磁极的写屏蔽和磁路，以及设置在主磁极和写屏蔽之间的自旋扭矩振荡元件。 旋转扭矩振荡元件设置有从写入屏蔽侧到主磁极侧依次设置的第一振荡层，非磁性自旋沉积层，第二振荡层，非磁性中间层和自旋注入层。 非磁性自旋沉积层由选自Ru，Rh，Ta，W，Cr，Ir，Mo，Re，Nb，Pt和Pd中的至少一种元素形成。

公开(公告)号：US20130082787A1

公开(公告)日：2013-04-04

申请号：US13200844

申请日：2011-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

摘要翻译： 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

公开(公告)号：US08325442B2

公开(公告)日：2012-12-04

申请号：US12591055

申请日：2009-11-05

申请人： Katsuhiko Koui ,  Mariko Shimizu ,  Kenichiro Yamada

发明人： Katsuhiko Koui ,  Mariko Shimizu ,  Kenichiro Yamada

IPC分类号： G11B5/33

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B2005/0002 ,  G11B2005/0024

摘要： A spin torque oscillator includes a first magnetic layer, a second magnetic layer and a first nonmagnetic layer. The first magnetic layer includes a magnetic film of a magnetic material with a body-centered cubic (bcc) structure and an oriented {110} plane of the body-centered cubic structure, the oriented {110} plane being oriented substantially parallel to a principal plane of the magnetic film. The first nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer. In addition, a magnetic moment in the magnetic film precesses around an axis substantially parallel to the principal plane. Furthermore, a magnetic field is applied in a direction substantially perpendicular to the principal plane, and a current is passed perpendicularly to the principal plane.

摘要翻译： 自旋转矩振荡器包括第一磁性层，第二磁性层和第一非磁性层。 第一磁性层包括具有体心立方（bcc）结构的磁性材料和体心立方结构的取向{110}面的磁性膜，取向{110}面取向为基本平行于主体 磁膜的平面。 第一非磁性层设置在第一磁性层和第二磁性层之间。 此外，磁性膜中的磁矩围绕基本平行于主平面的轴线进行。 此外，在基本上垂直于主平面的方向上施加磁场，并且电流垂直于主平面通过。

公开(公告)号：US07898774B2

公开(公告)日：2011-03-01

申请号：US11980678

申请日：2007-10-31

申请人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/305

摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。

公开(公告)号：US07738220B1

公开(公告)日：2010-06-15

申请号：US11779034

申请日：2007-07-17

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

公开(公告)号：US07375405B2

公开(公告)日：2008-05-20

申请号：US11079322

申请日：2005-03-15

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： H01L29/82 ,  H01L43/00 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 包含自旋阀膜的磁阻效应（MR）装置，以及包含MR装置的磁头，磁头组件和磁记录/再现系统，其中自由层的磁化方向与磁化强度成一定角度 当施加的磁场为零时，其中第二铁磁层的方向。 钉扎磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 构成构成被钉扎磁性层的一对强磁性膜中的任一个的磁化方向被保持，并且非磁性高电导率层与第一铁磁层相邻的第一铁磁层相邻的一侧设置在与第一铁磁层接触的一侧相反的一侧 具有非磁性间隔层。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US20070259213A1

公开(公告)日：2007-11-08

申请号：US11741900

申请日：2007-04-30

申请人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

发明人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  G11B5/3906 ,  H01L43/12 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

摘要翻译： 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。

公开(公告)号：US07130164B2

公开(公告)日：2006-10-31

申请号：US11061513

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US20060164764A1

公开(公告)日：2006-07-27

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.