DATA TRANSFER APPARATUS AND DATA TRANSFER METHOD
    52.
    发明申请
    DATA TRANSFER APPARATUS AND DATA TRANSFER METHOD 有权
    数据传输设备和数据传输方法

    公开(公告)号:US20120290746A1

    公开(公告)日:2012-11-15

    申请号:US13465712

    申请日:2012-05-07

    IPC分类号: G06F13/38

    CPC分类号: G06F13/4027

    摘要: A packet accompanying data valid information is transferred at high efficiency within an integrated circuit or between integrated circuits. A character indicating data enable information is provided and an identifier indicating a data enable character is assigned onto the packet. When the data enable information is valid in series, the data enable characters are eliminated from the packet to be transferred.

    摘要翻译: 伴随数据有效信息的包在集成电路内或集成电路之间以高效率传送。 提供指示数据使能信息的字符,并且将指示数据使能字符的标识符分配给分组。 当数据使能信息串联有效时,数据使能字符从要传输的数据包中消除。

    DIGITAL CAMERA
    53.
    发明申请

    公开(公告)号:US20120081600A1

    公开(公告)日:2012-04-05

    申请号:US13323862

    申请日:2011-12-13

    IPC分类号: H04N5/225

    CPC分类号: G03B17/02

    摘要: A digital camera of the present invention has: an optical housing having a bending optical system for reflecting photographic object light entering along a first optical axis to a second optical axis direction perpendicular to the first optical axis to form an image on an image pickup device; a camera main body having a containing portion for containing the optical housing slidably only in the second optical axis direction and having support portions for supporting the optical housing provided on each of both sides surfaces of the containing portion across the second optical axis of the bending optical system; and a shock absorbing unit provided between an inner surface of the containing portion of the camera main body in which the support portions are not provided and an outer surface of the optical housing facing thereto.

    Etching endpoint determination method
    55.
    发明授权
    Etching endpoint determination method 有权
    蚀刻端点测定方法

    公开(公告)号:US08083960B2

    公开(公告)日:2011-12-27

    申请号:US12189883

    申请日:2008-08-12

    IPC分类号: H01L21/302

    CPC分类号: H01J37/32963 H01J37/32935

    摘要: A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.

    摘要翻译: 精确地检测在蚀刻终点附近发生的发光强度的微观变化,从而快速确定蚀刻的终点。 一种蚀刻终点确定方法,用于确定将处理气体引入真空室的等离子体蚀刻装置中的蚀刻处理的终点,通过向引入的处理气体供给高频能量来产生等离子体,并使用所产生的等离子体进行等离子体处理 在存储在所述室中的工件上包括:对由所述真空室中产生的等离子体发射的光进行预设波长的光的采样的步骤,获取特定波长的采样光的发光强度作为时序数据, 并基于获取的时间序列数据计算回归线; 以及在第一步骤获得的回归线和时间序列数据之间计算时基方向上的距离的步骤。 基于在第二步骤获得的时基方向上的距离来确定蚀刻处理的终点。

    COMMUNICATION APPARATUS, CONTROL METHOD FOR COMMUNICATION APPARATUS, AND COMPUTER PROGRAM
    56.
    发明申请
    COMMUNICATION APPARATUS, CONTROL METHOD FOR COMMUNICATION APPARATUS, AND COMPUTER PROGRAM 有权
    通信设备,通信设备的控制方法和计算机程序

    公开(公告)号:US20100309909A1

    公开(公告)日:2010-12-09

    申请号:US12771993

    申请日:2010-04-30

    申请人: Daisuke Shiraishi

    发明人: Daisuke Shiraishi

    IPC分类号: H04L12/56

    摘要: A communication apparatus for performing connection type communication includes a first memory configured to store pieces of communication endpoint information relating to communication endpoints of connection, and a moving device configured to move, among the pieces of communication endpoint information stored in the first memory, communication endpoint information of connection set in a disconnection wait state, from the first memory to a second memory.

    摘要翻译: 用于执行连接型通信的通信装置包括:第一存储器,被配置为存储与连接的通信端点相关的通信端点信息;以及移动设备,被配置为在存储在第一存储器中的通信端点信息之间移动通信端点 在断开等待状态下设置的从第一存储器到第二存储器的连接信息。

    Plasma Processing Method
    57.
    发明申请
    Plasma Processing Method 审中-公开
    等离子体处理方法

    公开(公告)号:US20100297783A1

    公开(公告)日:2010-11-25

    申请号:US12849233

    申请日:2010-08-03

    IPC分类号: H01L21/302

    摘要: A method for performing a plasma process using a plasma processing apparatus which includes a vacuum process chamber, an exhaust device, a mass flow controller supplying a process gas, a stage electrode which receives and holds a workpiece by adsorption, a transfer device, and a high-frequency electrical source. The method includes a first step of performing the plasma process for the workpiece in the vacuum process chamber by a corresponding recipe of predetermined recipes, a second step of acquiring apparatus parameters showing the condition of the plasma processing apparatus when a specific recipe of the predetermined recipes is executed to diagnose whether the condition of the plasma processing apparatus is good or not based on the acquired apparatus parameters.

    摘要翻译: 一种使用等离子体处理装置进行等离子体处理的方法,所述等离子体处理装置包括真空处理室,排气装置,供给处理气体的质量流量控制器,通过吸附接收和保持工件的载物台电极,转印装置和 高频电源。 该方法包括:通过预定配方的相应配方对真空处理室中的工件进行等离子体处理的第一步骤;获取当预定配方的特定配方时显示等离子体处理装置的状态的装置参数的第二步骤 被执行以基于所获取的装置参数来诊断等离子体处理装置的状况是否良好。

    Communication apparatus
    58.
    发明授权
    Communication apparatus 有权
    通讯设备

    公开(公告)号:US07720979B2

    公开(公告)日:2010-05-18

    申请号:US11952217

    申请日:2007-12-07

    IPC分类号: G06F15/16

    摘要: A processor transfers control information set for each connection from a second memory to a first memory, and updates the control information stored in the first memory in accordance with processing of the connection. The processor selects control information updated in the first memory, and transfers the selected control information from the first memory to the second memory.

    摘要翻译: 处理器将针对每个连接的控制信息从第二存储器传送到第一存储器,并且根据连接的处理来更新存储在第一存储器中的控制信息。 处理器选择在第一存储器中更新的控制信息,并将所选择的控制信息从第一存储器传送到第二存储器。

    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus
    59.
    发明申请
    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效
    蚀刻装置,自偏压测定方法以及蚀刻装置的监视方法

    公开(公告)号:US20070217118A1

    公开(公告)日:2007-09-20

    申请号:US11506791

    申请日:2006-08-21

    IPC分类号: H01T23/00

    CPC分类号: H01L21/6833 H02N13/00

    摘要: The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.

    摘要翻译: 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法,该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10,用于将冷却气体12供应到样品2的后表面的机构13和14,并且控制 其压力,以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置,其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时,基于样品2的背面压力控制获取静电卡盘的力,并且将样品的静电卡盘与静电卡盘电压的相对力对应于 基于高频时样品的背面压力控制状态获取静电卡盘的力 y偏压功率不会被施加到正在处理的样品,并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。

    Plasma processing apparatus
    60.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号:US20060260746A1

    公开(公告)日:2006-11-23

    申请号:US11199234

    申请日:2005-08-09

    IPC分类号: H01L21/306

    摘要: There is provided a preventive maintenance technique capable of diagnosing apparatus conditions without causing serious decrease in uptime ratio. A plasma process apparatus is composed of a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device evacuating the vacuum process chamber, a mass flow controller supplying a process gas into the vacuum process chamber, a stage electrode receiving a workpiece and holding it by adsorption, a high-frequency electrical source applying a high-frequency electrical power to the supplied process gas to generate plasma, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

    摘要翻译: 提供了能够诊断装置条件而不引起正常运行时间比例严重降低的预防性维护技术。 等离子体处理装置由等离子体处理主框架和控制等离子体处理主框架的装置控制器构成。 等离子体处理主框架具有真空处理室,抽真空处理室的排气装置,向真空处理室供给工艺气体的质量流量控制器,接收工件并通过吸附保持其的阶段电极,高频 电源向所提供的处理气体施加高频电力以产生等离子体;以及传送装置,将工件放置在平台电极上并且执行被处理的工件。 设备控制器按照预定的步骤控制等离子体处理主框架,并且设置有诊断装置,该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数,当上述特定配方 执行配方,由此基于所获取的装置参数来诊断等离子体处理主框架的状态。