Heat resisting steel, gas turbine using the steel, and components thereof
    51.
    发明申请
    Heat resisting steel, gas turbine using the steel, and components thereof 审中-公开
    耐热钢,使用钢的燃气轮机及其部件

    公开(公告)号:US20090068052A1

    公开(公告)日:2009-03-12

    申请号:US12153552

    申请日:2008-05-21

    IPC分类号: C22C38/52 C22C38/44

    摘要: The invention is of a heat resisting martensitic steel comprising, by weight, 0.05 to 0.30% C, not more than 0.50% Si, not more than 0.60% Mn, 8.0 to 13.0% Cr, 0.5 to 3.0% Ni, 1.0 to 3.0% Mo, 0.1 to 1.5% W, 0.5 to 4% Co, 0.05 to 0.35% V, 0.02 to 0.30% in total of one or two elements selected from the group consisting of Nb and Ta, and 0.02 to 0.10% N, wherein a value of the square of a difference between the Ni amount and the Co amount, and the Ni amount are not more than values determined by a straight line drawn on a point A (1.0, 2.7%) and a point B (2.5, 1.0%) in the orthogonal coordinates shown in the attached drawing of FIG. 2 which represents a relationship between the above square value and the Ni amount, and an amount ratio of Mo/(Mo+0.5W) is not less than 0.5. The heat resisting steel is suitably used in various components of a gas turbine.

    摘要翻译: 本发明是耐热马氏体钢,其含有0.05〜0.30%C,不大于0.50%Si,不大于0.60%Mn,8.0〜13.0%Cr,0.5〜3.0%Ni,1.0〜3.0% Mo,0.1〜1.5%W,0.5〜4%Co,0.05〜0.35%V,0.02〜0.30%,1种或2种选自Nb和Ta的元素和0.02〜0.10%N,其中a Ni量和Co量之间的差的平方值,Ni量不大于通过点A(1.0,2.7%)和点B(2.5,1.0%)绘制的直线所确定的值, )在图1的附图中示出。 2表示上述平方值与Ni量之间的关系,Mo /(Mo + 0.5W)的量比不小于0.5。 耐热钢适用于燃气轮机的各种部件。

    Semiconductor device and manufacturing method thereof
    52.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US20060110935A1

    公开(公告)日:2006-05-25

    申请号:US11283849

    申请日:2005-11-22

    IPC分类号: H01L21/31 H01L21/469

    摘要: A semiconductor device with a fuse 3a to be cut for a circuit modification, of which passivation film coating the uppermost wiring layer is formed in a two-layer structure including a first insulating film 11 with high filling capability and a second insulating film 12 blocking penetration of moisture or impurities. An opening 21 formed in a specific depth through the insulating films on the fuse 3a is coated by a third insulating film 13 with the blocking capability. This prevents the penetration of moisture or impurities, and the corrosion of the fuse 3a.

    摘要翻译: 一种半导体器件,其具有用于电路修改的被切割的熔丝3a,其中涂覆最上面布线层的钝化膜形成为包括具有高填充能力的第一绝缘膜11和第二绝缘膜12阻挡的双层结构 渗透水分或杂质。 通过熔丝3a上的绝缘膜以特定深度形成的开口21由具有阻挡能力的第三绝缘膜13涂覆。 这防止了水分或杂质的渗透,以及熔丝3a的腐蚀。

    Fluid passage change-over apparatus for medical treatment
    53.
    发明授权
    Fluid passage change-over apparatus for medical treatment 失效
    用于医疗的流体通道切换装置

    公开(公告)号:US06589197B1

    公开(公告)日:2003-07-08

    申请号:US09763198

    申请日:2001-02-20

    IPC分类号: A61M3900

    摘要: A medical fluid passage switching apparatus comprising: at least, a rotatable shaft F; a cam C which is rotated in relation to the rotating movement of the shaft F to close and open divided tubes for determining a passage of a fluid; and a housing L having tube accepting holes I and so arranged to enable the holding of the cam C, is provided. More particularly, provided are such a medical fluid passage switching apparatus in a continuous ambulatory peritoneal dialysis (CAPD) system and a tube which is decreased in the diameter and/or thinned in the wall at a region where the cam or a combination of the cam and the clamp is engaged for closing and opening.

    摘要翻译: 一种医用流体切换装置,其特征在于,至少具有:可旋转轴F; 凸轮C,其相对于轴F的旋转运动旋转,以关闭和打开分开的管,用于确定流体的通过; 并且设置有具有能够保持凸轮C的管接收孔I并被布置成能够保持凸轮C的壳体L. 更具体地,提供了一种在连续不卧床腹膜透析(CAPD)系统中的这种医疗流体通道切换装置和在凸轮或凸轮的组合的区域中壁的直径减小和/或变薄的管 并且夹具被接合以关闭和打开。

    Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer
    54.
    发明授权
    Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer 有权
    包括存储晶体管,选择晶体管和中间扩散层的非易失性半导体存储器件

    公开(公告)号:US06169307A

    公开(公告)日:2001-01-02

    申请号:US09206560

    申请日:1998-12-08

    IPC分类号: G01L29788

    摘要: A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

    摘要翻译: 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上,介于其间的中间扩散层。 存储晶体管包括:栅极绝缘膜,具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间,利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果,可以获得更高的可靠性,并且可以在较低的电压下进行重写。 此外,由于提供了选择晶体管,所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件,实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

    Gas turbine and gas turbine nozzle
    55.
    发明授权
    Gas turbine and gas turbine nozzle 失效
    燃气轮机和燃气轮机喷嘴

    公开(公告)号:US5370497A

    公开(公告)日:1994-12-06

    申请号:US965699

    申请日:1992-10-23

    摘要: A Ni-base superalloy consisting essentially of, by weight: 0.05 to 0.20% C, 20 to 25% Co, 15 to 25% Cr, 1.0 to 3.0% Al, 1.0 to 3.0% Ti, 1.0 to 3.0% Nb, 5 to 10% W, and at least 42.5% Ni, the combination of the [Al+Ti] and tungsten contents being determined as shown in FIG. 5. This superalloy has a high thermal-fatigue resistance, a great high-temperature strength, particularly, a great creep rupture strength, and a good weldability. The superalloy is used to form gas turbine nozzles, which are employed in a gas turbine. Using such a gas turbine, a combined power generating system is built.

    摘要翻译: 一种Ni基超合金,其主要由以重量计:C:0.05〜0.20%,Co:20〜25%,Cr:15〜25%,Al:1.0〜3.0%,Ti:1.0〜3.0%,Nb:1.0〜 10%W和至少42.5%的Ni,[Al + Ti]和钨含量的组合如图6所示确定。 该超合金具有高耐热疲劳性,高温强度,特别是大的蠕变断裂强度和良好的可焊性。 超级合金用于形成用于燃气轮机中的燃气轮机喷嘴。 使用这种燃气轮机,构建组合发电系统。

    Boiler tube
    56.
    发明授权
    Boiler tube 失效
    锅炉管

    公开(公告)号:US4505232A

    公开(公告)日:1985-03-19

    申请号:US593931

    申请日:1984-03-27

    摘要: A boiler tube having a double-tube structure constituted by an inner tube and an outer tube integrated with each other. The inner tube is made of an alloy consisting essentially of, by weight, 0.02 to 0.15% of C, 0.5 to 3.5% of Si, not greater than 2% of Mn, 25 to 40% of Ni, 20.5 to 27% of Cr, 0.5 to 3% of Mo, not greater than 1% of Nb and the balance Fe and having a substantially fully austenite structure. The outer tube is made of an alloy consisting essentially of, by weight, 0.02 to 0.2% of C, not greater than 3.5% of Si, not greater than 2% of Mn, 33 to 45% of Ni, 30 to 40% of Cr and the balance Fe and having a substantially fully austenite structure. The inner tube made of the alloy having the composition specified above exhibits a high resistance to steam oxidation without any reduction in high-temperature strength even at elevated steam temperature, while the outer tube made of the alloy having the composition specified above exhibits a superior resistance to corrosion by coal combustion gas.

    摘要翻译: 一种具有由内管和彼此一体化的外管构成的双管结构的锅炉管。 内管由以下组成的合金制成,该合金主要由C:0.02〜0.15%,Si:0.5〜3.5%,Mn:2%以下,Ni:25〜40%,Cr:20.5〜27% ,0.5〜3%的Mo,不大于1%的Nb,余量为Fe,并具有基本上完全奥氏体的结构。 外管由以下组成的合金制成,该合金主要由以下组成:C:0.02〜0.2%,Si:3.5%以下,Mn:2%以下,Ni:33〜45%,Ni:30〜40% Cr和余量Fe并具有基本上完全奥氏体的结构。 由具有上述组成的合金制成的内管即使在升高的蒸汽温度下也具有高的耐蒸汽氧化性,而不会降低高温强度,而由具有上述组成的合金制成的外管显示出优异的电阻 由煤燃烧气体腐蚀。

    Solid state imaging device including a semiconductor substrate on which a plurality of pixel cells have been formed
    58.
    发明授权
    Solid state imaging device including a semiconductor substrate on which a plurality of pixel cells have been formed 有权
    固态成像装置,包括其上形成有多个像素单元的半导体基板

    公开(公告)号:US07910966B2

    公开(公告)日:2011-03-22

    申请号:US12425029

    申请日:2009-04-16

    IPC分类号: H01L31/062

    摘要: A solid state imaging device including a pixel region where a plurality of pixel cells 10r1, 10g1-10g3, 10b1-10b2 . . . have been formed. When focusing on a red pixel cell whose color filter has the longer transmission peak wavelength and a blue pixel cell whose color filter has the shorter transmission peak wavelength, the distribution of substrate contacts is denser in a region in the vicinity of a photodiode in the red pixel cell than a region in the vicinity of a photodiode in the blue pixel cell.

    摘要翻译: 一种固态成像装置,包括多个像素单元10r1,10g1-10g3,10b1-10b2的像素区域。 。 。 已经形成。 当滤色器具有较长透射峰值波长的红色像素单元和滤色器具有较短透射峰值波长的蓝色像素单元时,基板触点的分布在红色光电二极管附近的区域中更为密集 像素单元比蓝色像素单元中的光电二极管附近的区域。

    SOLID STATE IMAGING DEVICE INCLUDING A SEMICONDUCTOR SUBSTRATE ON WHICH A PLURALITY OF PIXEL CELLS HAVE BEEN FORMED
    59.
    发明申请
    SOLID STATE IMAGING DEVICE INCLUDING A SEMICONDUCTOR SUBSTRATE ON WHICH A PLURALITY OF PIXEL CELLS HAVE BEEN FORMED 有权
    固体状态成像装置,包括形成多个像素电池的半导体基板

    公开(公告)号:US20090294815A1

    公开(公告)日:2009-12-03

    申请号:US12425029

    申请日:2009-04-16

    IPC分类号: H01L31/112 H01L31/0232

    摘要: A solid state imaging device including a pixel region where a plurality of pixel cells 10r1, 10g1-10g3, 10b1-10b2 . . . have been formed. When focusing on a red pixel cell whose color filter has the longer transmission peak wavelength and a blue pixel cell whose color filter has the shorter transmission peak wavelength, the distribution of substrate contacts is denser in a region in the vicinity of a photodiode in the red pixel cell than a region in the vicinity of a photodiode in the blue pixel cell.

    摘要翻译: 一种固态成像装置,包括多个像素单元10r1,10g1-10g3,10b1-10b2的像素区域。 。 。 已经形成。 当滤色器具有较长透射峰值波长的红色像素单元和滤色器具有较短透射峰值波长的蓝色像素单元时,基板触点的分布在红色光电二极管附近的区域中更为密集 像素单元比蓝色像素单元中的光电二极管附近的区域。

    Ni-based superalloy having high oxidation resistance and gas turbine part
    60.
    发明授权
    Ni-based superalloy having high oxidation resistance and gas turbine part 有权
    具有高抗氧化性的Ni基超级合金和燃气轮机部件

    公开(公告)号:US07169241B2

    公开(公告)日:2007-01-30

    申请号:US10804065

    申请日:2004-03-19

    IPC分类号: C22C19/05

    CPC分类号: C22C19/056 C22C19/057

    摘要: A Ni-based alloy hardened with the γ′ phase, which is able to exhibit not only superior strength at high temperatures, but also excellent hot corrosion resistance and oxidation resistance at high temperatures in spite of containing no Re or reducing the amount of Re. The Ni-based superalloy contains, by weight, C: 0.01 to 0.5%, B: 0.01 to 0.04%, Hf: 0.1 to 2.5%, Co: 0.8 to 15%, Ta: more than 0% but less than 8.5%, Cr: 1.5 to 16%, Mo: more than 0% but less than 1.0%, W: 5 to 14%, Ti: 0.1 to 4.75%, Al: 2.5 to 7%, Nb: more than 0% but less than 4%, V: 0 to less than 1.0%, Zr: 0 to less than 0.1%, Re: 0 to less than 9%, at least one of platinum group elements: 0 to less than 0.5% in total, at least one of rare earth elements: 0 to less than 0.1% in total, and the rest being Ni except for unavoidable impurities.

    摘要翻译: 用γ-相硬化的Ni基合金,不仅在高温下不仅表现出优异的强度,而且在高温下也表现出优异的耐热腐蚀性和抗氧化性,尽管不含Re或减少Re的量。 Ni基超合金含有C:0.01〜0.5%,B:0.01〜0.04%,Hf:0.1〜2.5%,Co:0.8〜15%,Ta:0%以上且小于8.5% Cr:1.5〜16%,Mo:大于0%但小于1.0%,W:5〜14%,Ti:0.1〜4.75%,Al:2.5〜7%,Nb:大于0% %,V:0〜小于1.0%,Zr:0〜小于0.1%,Re:0〜小于9%,铂族元素中的至少一种:0〜小于0.5% 稀土元素总计为0〜小于0.1%,其余为Ni,不含不可避免的杂质。