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51.发明授权Method for producing a semiconductor device by filling hollows with thermally decomposed doped and undoped polysilicon 失效通过用热分解的掺杂和未掺杂的多晶硅填充中空来制造半导体器件的方法
公开(公告)号：US4977104A
公开(公告)日：1990-12-11
申请号：US327538
申请日：1989-03-23
申请人： Kazuyuki Sawada , Hisashi Ogawa , Kohsaku Yano , Tsutomu Fujita
发明人： Kazuyuki Sawada , Hisashi Ogawa , Kohsaku Yano , Tsutomu Fujita
IPC分类号： H01L27/04 , H01L21/205 , H01L21/334 , H01L21/822
CPC分类号： H01L29/66181
摘要： A method is provided for producing a semiconductor device characterized by filling hollows having a high aspect ratio with a semiconductor film doped with impurities as dopants and an undoped semiconductor film, given that the doped polycrystalline Si film produced by thermal decomposition of reactive gases mixed with impurity gases and the undoped polycrystalline Si film produced by thermal decomposition of reactive gases containing no impurity gas have different step coverage characteristics from each other. The method allows uniform distribution of dopants as well as improvement of processing throughput by forming sequentially the two types of semiconductor films in one reaction chamber.
摘要翻译： 提供了一种用于制造半导体器件的方法，其特征在于，将掺杂有杂质的半导体膜作为掺杂剂和未掺杂半导体膜填充具有高纵横比的空穴，假定通过与杂质混合的反应气体的热分解产生的掺杂多晶Si膜 气体和通过不含杂质气体的反应性气体的热分解产生的未掺杂的多晶硅膜具有彼此不同的阶梯覆盖特性。 该方法允许通过在一个反应室中依次形成两种类型的半导体膜来均匀分布掺杂剂以及提高处理量。
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公开(公告)号：US4870429A
公开(公告)日：1989-09-26
申请号：US20743
申请日：1987-03-02
IPC分类号： G11B7/24
CPC分类号： G11B7/24 , Y10S428/913 , Y10S430/146
摘要： An optical disk is provided which comprises two sheets of substrates; or two sheets of substrate and a reinforcing plate or a reinforcing rim; or one sheet of substrate and a reinforcing plate; which are bonded to form an integrated body having a spacer interposed therebetween, said spacer being made of elastomeric foam having a specific gravity of not more than 1.5 and an expansion ratio of not less than 1.5 as the material of the said spacer. This optical disk has a high adaptability of the drive and exhibits a high reliability, i.e. excellent vibration restricting performance, thereby being possible to provide a stable and highly accurate information processing.
摘要翻译： 提供了一种包括两片基片的光盘; 或两片基板和加强板或加强边缘; 或一片基板和加强板; 它们被结合以形成具有间隔件的整体，所述间隔件由弹性体泡沫制成，比重不大于1.5，膨胀比不小于1.5作为所述间隔物的材料。 该光盘具有高的驱动适应性，并具有高的可靠性，即优异的振动限制性能，从而可以提供稳定和高度准确的信息处理。
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公开(公告)号：US4826780A
公开(公告)日：1989-05-02
申请号：US124423
申请日：1987-11-23
申请人： Toyoki Takemoto , Tadao Komeda , Haruyasu Yamada , Tsutomu Fujita
发明人： Toyoki Takemoto , Tadao Komeda , Haruyasu Yamada , Tsutomu Fujita
IPC分类号： H01L21/74 , H01L21/761 , H01L21/8228 , H01L27/02 , H01L27/06 , H01L27/082 , H01L27/092 , H01L21/38
CPC分类号： H01L27/0244 , H01L21/74 , H01L21/761 , H01L21/82285 , H01L27/0623 , H01L27/0826 , H01L27/0922 , Y10S148/009 , Y10S148/151
摘要： In a semiconductor IC, a vertical pnp or npn transistor of a uniform characteristic and a high breakdown voltage is made by forming, for example, a p.sup.- -collector region (39) in an n-type epitaxial region, an n-well base region (41) formed in the p.sup.- -collector region (39) and a p-emitter region (42) formed in the n-well base region (41); and furthermore, for example as shown in FIG. 9, p.sup.- -regions (40) and (49) are formed simultaneously with the p.sup.- -collector region (39) and an n-region (53) is formed simultaneously with the n-well base region (41), thereby constituting IIL of superior characteristics and a high resistance device at the same time as forming of the vertical transistor without substantial increase of manufacturing steps; and in the similar way, by combining the p.sup.- -region and n-region formed in the above-mentioned simultaneous steps with other region formed simultaneously with the forming of the vertical transistor, high h.sub.FE transistor, high speed vertical npn transistor, cross-over devices, p-channel and/or n-channel MOS transistors can be formed within limited manufacturing steps.
摘要翻译： 在半导体IC中，通过在n型外延区域中形成例如p型集电极区域（39），形成具有均匀特性和高击穿电压的垂直pnp或npn晶体管，n阱基极 形成在p型集电极区域（39）中的区域（41）和形成在n阱基极区域（41）中的p型发射极区域（42）。 此外，例如如图1所示。 如图9所示，p-区域（40）和（49）与p-集电极区域（39）同时形成，并且与n-阱基区域（41）同时形成n区域（53），从而构成 IIL具有优越的特性和高电阻器件，同时形成垂直晶体管而不大幅度增加制造步骤; 并且以类似的方式，通过将在上述同步步骤中形成的p区域和n区域与形成垂直晶体管，高hFE晶体管，高速垂直npn晶体管， 可以在有限的制造步骤中形成器件，p沟道和/或n沟道MOS晶体管。
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54.发明授权Method for making semiconductor device utilizing molecular beam epitaxy to form the emitter layers 失效制造半导体器件利用分子束外延形成发射极层的方法
公开(公告)号：US4563807A
公开(公告)日：1986-01-14
申请号：US596592
申请日：1984-04-04
IPC分类号： H01L21/20 , H01L21/203 , H01L21/285 , H01L21/331 , H01L29/73 , H01L29/732 , H01L21/225
CPC分类号： H01L29/7325 , H01L21/02532 , H01L21/02576 , H01L21/02631 , H01L21/28525 , Y10S148/123 , Y10S148/124 , Y10S148/169
摘要： Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h.sub.FE and enabling a shallow emitter junction.
摘要翻译： 诸如双极晶体管的半导体器件通过分子束外延制造，其中发射极层（27）和多晶硅的覆盖接触区域（28）在硅衬底（23 + 26）上连续生长而不破坏高真空，因此 消除多晶硅层（28）下的自然氧化膜的不利界面和不利的供体 - 受体补偿，同时实现良好控制的hFE并实现浅发射极结。
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公开(公告)号：US4484211A
公开(公告)日：1984-11-20
申请号：US542555
申请日：1983-10-17
IPC分类号： H01L29/06 , H01L29/732 , H01L27/04 , H01L29/04 , H01L29/72
CPC分类号： H01L29/7325 , H01L29/0649
摘要： A semiconductor integrated circuit device in which the side surfaces of an emitter of an oxide isolated bipolar transistor are surrounded with insulating compounds or regions so that the capacitance between the emitter and base is lowered and a base is formed by the self-alignment so that the influence of an active base between an external base and the emitter can be made negligible. Thus the base resistance and parasitic capacitance are lowered.
摘要翻译： 一种半导体集成电路器件，其中氧化物隔离双极晶体管的发射极的侧表面被绝缘化合物或区域包围，使得发射极和基极之间的电容降低，并且通过自对准形成基极， 活性碱在外部碱基和发光体之间的影响可以忽略不计。 因此，基极电阻和寄生电容降低。
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公开(公告)号：US4442456A
公开(公告)日：1984-04-10
申请号：US265809
申请日：1981-05-21
CPC分类号： H04N5/2253 , H01L27/14618 , H01L27/14643 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/14 , H01L2924/15787 , H01L2924/16195
摘要： An accommodation portion of a solid-state imaging device having a recessed shape in section is so formed in a package such that the center thereof is deviated from the center of the package. A light-receiving element having a light-receiving portion as well as a circuit portion for driving the light-receiving portion that are formed on the same plane, is so disposed in the accommodation portion such that the center of the light-receiving portion is in agreement with the center of the package. The outer diameter of the imaging device can be reduced, and the imaging center can be brought into agreement with the center of the light-receiving portion.
摘要翻译： 具有凹形形状的固态成像装置的容纳部分形成为包装体，使得其中心偏离包装的中心。 具有光接收部分的光接收元件以及用于驱动形成在同一平面上的光接收部分的电路部分设置在容纳部分中，使得光接收部分的中心为 与中心的包裹一致。 可以减小成像装置的外径，并且可以使成像中心与光接收部分的中心一致。
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公开(公告)号：US4428256A
公开(公告)日：1984-01-31
申请号：US279218
申请日：1981-06-30
申请人： Jinsei Ida , Yoshio Hagimoto , Tsutomu Fujita
发明人： Jinsei Ida , Yoshio Hagimoto , Tsutomu Fujita
CPC分类号： B23Q16/065 , B23Q3/157 , B23Q2003/1558 , Y10T29/5107 , Y10T74/1441
摘要： An apparatus for driving an index table which includes a first shaft, an index table rotatably mounted on the first shaft having grooves therein forming a Geneva gear and a mechanism for driving the table in rotation including a drive motor, a second shaft driven by the motor, a crank mounted on the second shaft, and a Geneva pin mounted on the crank. The grooves have force bearing walls which include straight portions and sector portions. The Geneva pin is engaged in the grooves in the table to effect stepwise rotation of the table to equispaced, predetermined angular positions. The second shaft and the grooves are spaced from each other such that the distance from the axis of the second shaft to the circumferential surface of the pin is less than the distance from the axis of the shaft to the straight portions of the force bearing walls of the grooves. The sector portions of the force bearing walls of the grooves are recessed such that the distance from the axis of the second shaft to the circumferential surface of the pin is equal to the distance from the axis of the second shaft to the sector portions of the force bearing walls of the grooves. Thus the circumferential surface of the pin transfers from bearing against the walls of the straight portion to bearing against the walls of the recessed sector portion prior to the index table finishing rotation to one of the predetermined angular positions. The index table thereafter completes rotation to the predetermined angular position powered solely by its inertia.
摘要翻译： 一种用于驱动分度台的装置，包括第一轴，可旋转地安装在第一轴上的分度表，其中具有凹槽的索引台形成了日内瓦齿轮;以及用于驱动旋转台的机构，包括驱动马达，由马达驱动的第二轴 ，安装在第二轴上的曲柄和安装在曲柄上的日内瓦销。 凹槽具有包含直线部分和扇形部分的力轴承壁。 日内瓦销接合在桌子中的凹槽中，以使桌子逐步旋转到等间隔的预定角度位置。 第二轴和槽彼此间隔开，使得从第二轴的轴线到销的圆周表面的距离小于从轴的轴线到力的支承壁的直线部分的距离 凹槽。 槽的受力壁的扇形部分凹陷，使得从第二轴的轴线到销的圆周表面的距离等于从第二轴的轴线到力的扇形部分的距离 沟槽的轴承壁。 因此，在分度台完成旋转到预定角度位置之一之前，销的圆周表面从轴承转移抵靠直线部分的壁，以抵靠凹陷扇形部分的壁。 然后，索引表完成旋转到仅由其惯性驱动的预定角度位置。
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公开(公告)号：US4242373A
公开(公告)日：1980-12-30
申请号：US910344
申请日：1978-05-30
申请人： Kiyoshi Watanabe , Kazuo Sunahara , Tsutomu Fujita
发明人： Kiyoshi Watanabe , Kazuo Sunahara , Tsutomu Fujita
摘要： A method for forming a thin film of cerium oxide as a blocking layer which constitutes a portion of a photoelectric film of a blocking type image pickup tube is disclosed. A substrate deposition rate in a vacuum deposition process is established in a range between 0.01 to 0.6 A/sec to prevent the deposition of particles which result in black or white spots in a picture image. It is more effective to select a particle size of 5 .mu. or more for the primary particles to be deposited.
摘要翻译： 公开了一种形成作为阻挡层的氧化铈薄膜的方法，该阻挡层构成了封闭型图像拾取管的光电膜的一部分。 在真空沉积工艺中的衬底沉积速率建立在0.01至0.6A / sec的范围内，以防止在图像中产生黑色或白色斑点的颗粒沉积。 对于要沉积的一次颗粒选择5μm或更大的粒径是更有效的。
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公开(公告)号：US4043748A
公开(公告)日：1977-08-23
申请号：US715716
申请日：1976-08-19
CPC分类号： C23C14/243
摘要： The evaporation boat comprises superposed upper and lower sheets. The upper sheet includes a upwardly convexed central section and a pair of side sections bent back toward the central section and the lower sheet includes a downwardly convexed central section and a pair of side sections bent inwardly toward the upper sheet. The upper and lower sheets are superposed each other such that the central sections of the upper and lower sheets define a substantially closed chamber for accomodating source material to be evaporated, that slit shaped vapor passages are formed between the upper and lower sheets or the opposite sides of the chamber and that any straight line drawn between any point on the surface of the source material and any point in the passages intersects the inner wall of the upper or lower sheets.
摘要翻译： 蒸发舟包括叠加的上下板。 上片包括向上凸起的中心部分和朝向中心部分向后弯曲的一对侧部，并且下片包括向下凸出的中心部分和朝向上片向内弯曲的一对侧部。 上下板叠合，使得上板和下板的中心部分限定了用于容纳要蒸发的源材料的基本上封闭的室，在上板和下板或相对侧之间形成狭缝形蒸汽通道 并且在源材料表面上的任何点和通道中的任何点之间绘制的任何直线与上部或下部片材的内壁相交。
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