公开(公告)号：US08830202B2

公开(公告)日：2014-09-09

申请号：US12703163

申请日：2010-02-09

申请人： Kuang-Jung Chen

发明人： Kuang-Jung Chen

IPC分类号： G09G5/00 ,  G06F3/044 ,  H01L27/32 ,  G06F3/041

CPC分类号： G06F3/044 ,  G06F3/0412 ,  G06F2203/04111 ,  H01L27/323

摘要： A touch-sensing display apparatus including a touch panel, an environmentally sensitive electronic device and an adhesive layer is provided. The water/oxygen vapor transmission rate of the touch panel is lower than 10−1 g/m2*day, and the touch panel includes a first substrate, a sensing circuit and at least one water/oxygen barrier layer. The first substrate is a first flexible substrate. The sensing circuit and the water/oxygen barrier layer are disposed on the first substrate. The environmentally sensitive electronic device includes a second substrate and a pixel array. The pixel array is disposed on the second substrate and between the first substrate and the second substrate. The adhesive layer is disposed between the touch panel and the environmentally sensitive electronic device. Moreover, a fabricating method of the above-mentioned touch-sensing display apparatus is also provided.

摘要翻译： 提供了包括触摸面板，环境敏感电子设备和粘合剂层的触摸感测显示设备。 触摸面板的水/氧气透过率低于10-1g / m2 *天，触控面板包括第一基板，检测电路和至少一个水/氧阻隔层。 第一衬底是第一柔性衬底。 感测电路和水/氧阻隔层设置在第一基板上。 环境敏感的电子设备包括第二基板和像素阵列。 像素阵列设置在第二基板上并且在第一基板和第二基板之间。 粘合剂层设置在触摸面板和环境敏感的电子设备之间。 此外，还提供了上述触摸感测显示装置的制造方法。

公开(公告)号：US20140024191A1

公开(公告)日：2014-01-23

申请号：US13555240

申请日：2012-07-23

申请人： Kuang-Jung Chen ,  Kangguo Cheng ,  Bruce B. Doris ,  Steven J. Holmes ,  Sen Liu

发明人： Kuang-Jung Chen ,  Kangguo Cheng ,  Bruce B. Doris ,  Steven J. Holmes ,  Sen Liu

IPC分类号： H01L21/31 ,  H01L21/336

CPC分类号： H01L21/0274 ,  H01L21/26586 ,  H01L21/3081 ,  H01L21/76229 ,  H01L21/76283 ,  H01L29/517 ,  H01L29/66575 ,  H01L29/78

摘要： A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.

摘要翻译： 使用单个掩模和混合光致抗蚀剂形成半导体器件的不同结构的方法。 该方法包括：在半导体衬底上施加第一光致抗蚀剂层; 使用光掩模图案化第一光致抗蚀剂层以形成第一图案化光致抗蚀剂层; 使用所述第一图案化的光致抗蚀剂层形成半导体器件的第一结构; 去除第一图案化光致抗蚀剂层; 在所述半导体衬底上施加第二光致抗蚀剂层; 使用光掩模图案化第二光致抗蚀剂层以形成第二图案化光致抗蚀剂层; 使用所述第二图案化的光致抗蚀剂层形成半导体器件的第二结构; 去除第二图案化光致抗蚀剂层; 并且其中所述第一或第二光致抗蚀剂层是包含混合光致抗蚀剂的混合光致抗蚀剂层。

公开(公告)号：US08624134B2

公开(公告)日：2014-01-07

申请号：US12944691

申请日：2010-11-11

申请人： Kuang-Jung Chen

发明人： Kuang-Jung Chen

IPC分类号： H01L23/28

CPC分类号： H01L21/56 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An encapsulation method of an environmental sensitive element is provided. An environmental sensitive element and a first rib are formed on a first substrate. The first rib surrounds the environmentally sensitive element. A getter layer is formed on the environmental sensitive element. A first encapsulation layer is formed to encapsulate the getter layer and the first rib. The first barrier layer is formed to encapsulate the first encapsulation layer located on the first rib. The first rib, a portion of the first encapsulation layer located on the first rib and the first barrier layer form a barrier structure. A second substrate is provided on the first substrate and a filling layer is formed between the first substrate and the second substrate. The second substrate is bonded to the first substrate by the filling layer. The filling layer encapsulates the environmental sensitive element, the first encapsulation layer and the barrier structure.

摘要翻译： 提供了一种环境敏感元件的封装方法。 在第一基板上形成环境敏感元件和第一肋条。 第一个肋围绕环境敏感元件。 在环境敏感元件上形成吸气剂层。 形成第一封装层以封装吸气剂层和第一肋。 形成第一阻挡层以封装位于第一肋上的第一封装层。 第一肋，位于第一肋上的第一包封层的一部分和第一阻挡层形成阻挡结构。 在第一基板上设置第二基板，在第一基板和第二基板之间形成填充层。 第二基板通过填充层与第一基板结合。 填充层封装环境敏感元件，第一封装层和屏障结构。

公开(公告)号：US08236126B2

公开(公告)日：2012-08-07

申请号：US12860945

申请日：2010-08-23

申请人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Ping-I Shih ,  Kung-Yu Cheng ,  Jian-Lin Wu

发明人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Ping-I Shih ,  Kung-Yu Cheng ,  Jian-Lin Wu

IPC分类号： B32B38/10

CPC分类号： B32B37/26 ,  B32B37/185 ,  B32B37/187 ,  B32B2037/1253 ,  B32B2037/268 ,  B32B2038/1891 ,  B32B2457/206 ,  H01L51/524 ,  H01L2251/5338 ,  H01L2924/16235 ,  Y10T156/1052

摘要： An encapsulation method of an environmentally sensitive electronic element is provided. A first substrate is provided, wherein at least one first alignment mark and a plurality of environmentally sensitive electronic elements are formed on the first substrate. A second substrate is provided, wherein at least one second alignment mark and a plurality of limiting cavities are formed on the second substrate. A plurality of cover lids is respectively disposed in the limiting cavities. An adhesive is formed on the cover lids. The first substrate and the second substrate are laminated together with the first alignment mark and the second alignment mark as reference, so that the environmentally sensitive electronic elements are sealed in the adhesive and located between the first substrate and the second substrate. The second substrate and the cover lids are separated from each other.

摘要翻译： 提供了一种对环境敏感的电子元件的封装方法。 提供了第一衬底，其中在第一衬底上形成至少一个第一对准标记和多个对环境敏感的电子元件。 提供了第二基板，其中在第二基板上形成至少一个第二对准标记和多个限制腔。 多个盖盖分别设置在限制腔中。 在盖盖上形成粘合剂。 将第一基板和第二基板与第一对准标记和第二对准标记作为参考层压在一起，使得环境敏感的电子元件被密封在粘合剂中并且位于第一基板和第二基板之间。 第二基板和盖盖彼此分离。

公开(公告)号：US20120012246A1

公开(公告)日：2012-01-19

申请号：US12860945

申请日：2010-08-23

申请人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Ping-I Shih ,  Kung-Yu Cheng ,  Jian-Lin Wu

发明人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Ping-I Shih ,  Kung-Yu Cheng ,  Jian-Lin Wu

IPC分类号： B32B38/10

CPC分类号： B32B37/26 ,  B32B37/185 ,  B32B37/187 ,  B32B2037/1253 ,  B32B2037/268 ,  B32B2038/1891 ,  B32B2457/206 ,  H01L51/524 ,  H01L2251/5338 ,  H01L2924/16235 ,  Y10T156/1052

摘要： An encapsulation method of an environmentally sensitive electronic element is provided. A first substrate is provided, wherein at least one first alignment mark and a plurality of environmentally sensitive electronic elements are formed on the first substrate. A second substrate is provided, wherein at least one second alignment mark and a plurality of limiting cavities are formed on the second substrate. A plurality of cover lids is respectively disposed in the limiting cavities. An adhesive is formed on the cover lids. The first substrate and the second substrate are laminated together with the first alignment mark and the second alignment mark as reference, so that the environmentally sensitive electronic elements are sealed in the adhesive and located between the first substrate and the second substrate. The second substrate and the cover lids are separated from each other.

摘要翻译： 提供了一种对环境敏感的电子元件的封装方法。 提供了第一衬底，其中在第一衬底上形成至少一个第一对准标记和多个对环境敏感的电子元件。 提供了第二基板，其中在第二基板上形成至少一个第二对准标记和多个限制腔。 多个盖盖分别设置在限制腔中。 在盖盖上形成粘合剂。 将第一基板和第二基板与第一对准标记和第二对准标记作为参考层压在一起，使得环境敏感的电子元件被密封在粘合剂中并且位于第一基板和第二基板之间。 第二基板和盖盖彼此分离。

公开(公告)号：US20110204523A1

公开(公告)日：2011-08-25

申请号：US12708877

申请日：2010-02-19

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L23/522 ,  G03F7/20

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

摘要翻译： 一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上， 第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。

公开(公告)号：US20100265206A1

公开(公告)日：2010-10-21

申请号：US12699065

申请日：2010-02-03

申请人： Kuang-Jung Chen

发明人： Kuang-Jung Chen

IPC分类号： G06F3/045 ,  H01J9/00

CPC分类号： G06F3/0412 ,  G06F3/044 ,  G06F2203/04111 ,  H01L27/323

摘要： A touch-sensing display apparatus and a fabricating method thereof are provided. The touch-sensing display apparatus includes a substrate, an organic light emitting diode (OLED) display layer, and a touch structure. The OLED display layer is between the substrate and the touch structure apparatus and directly contacts with the touch structure. The touch structure includes a first water/oxygen barrier layer, an electromagnetic interference (EMI) shielding layer, a sensing circuit layer, and a second water/oxygen barrier layer. The first water/oxygen barrier layer is located on the OLED display layer. The EMI shielding layer is located on the first water/oxygen barrier layer. The sensing circuit layer is located on the EMI shielding layer. The second water/oxygen barrier layer is located on the sensing circuit layer.

摘要翻译： 提供了一种触摸感测显示装置及其制造方法。 触摸感测显示装置包括衬底，有机发光二极管（OLED）显示层和触摸结构。 OLED显示层位于基板和触摸结构装置之间，并且与触摸结构直接接触。 触摸结构包括第一水/氧阻隔层，电磁干扰（EMI）屏蔽层，感测电路层和第二水/氧阻挡层。 第一水/氧阻挡层位于OLED显示层上。 EMI屏蔽层位于第一水/氧阻隔层上。 感测电路层位于EMI屏蔽层上。 第二水/氧阻挡层位于感测电路层上。

公开(公告)号：US20060105269A1

公开(公告)日：2006-05-18

申请号：US10988137

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

发明人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

IPC分类号： G03C1/76

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.

摘要翻译： 公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基 ，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基 或半或全氟取代或未取代的脂族基团; n表示1以上的整数， 和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。 还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。

公开(公告)号：US20060105266A1

公开(公告)日：2006-05-18

申请号：US10987530

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

发明人： Mahmoud Khojasteh ,  Kuang-Jung Chen ,  Pushkara Varanasi

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/40

摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.

摘要翻译： 使用具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物可获得可在193nm辐射（以及可能的其它辐射）下成像的酸催化的正性抗蚀剂组合物，其包含优选连接于萘酯基团的低活化能部分。 抗蚀剂允许具有低活化能的丙烯酸酯/甲基丙烯酸酯聚合物的性能益处用于成像，从而能够提高分辨率和降低曝光后烘烤灵敏度。 抗蚀剂聚合物还优选含有包含氟代醇部分的单体单元和包含内酯部分的单体单元。

公开(公告)号：US06770419B2

公开(公告)日：2004-08-03

申请号：US10241937

申请日：2002-09-11

申请人： Mahmoud M. Khojasteh ,  Ranee W. Kwong ,  Kuang-Jung Chen ,  Pushkara Rao Varanasi ,  Robert D. Allen ,  Phillip Brock ,  Frances Houle ,  Ratnam Sooriyakumaran

发明人： Mahmoud M. Khojasteh ,  Ranee W. Kwong ,  Kuang-Jung Chen ,  Pushkara Rao Varanasi ,  Robert D. Allen ,  Phillip Brock ,  Frances Houle ,  Ratnam Sooriyakumaran

IPC分类号： G03C173

CPC分类号： G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

摘要： The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.