-
1.发明申请Wet developable bottom antireflective coating composition and method for use thereof 失效湿可显影底部抗反射涂料组合物及其使用方法公开(公告)号：US20070243484A1
公开(公告)日：2007-10-18
申请号：US11405879
申请日：2006-04-18
申请人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Margaret Lawson , Wenjie Li , Kaushal Patel , Pushkara Varanasi
发明人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Margaret Lawson , Wenjie Li , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译： 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。
-
公开(公告)号：US20070231736A1
公开(公告)日：2007-10-04
申请号：US11391187
申请日：2006-03-28
申请人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Wenjie Li , Kaushal Patel , Pushkara Varanasi
发明人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Wenjie Li , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a photoresist composition. The antireflective coating composition of the present invention comprises a polymer, which includes at least one monomer unit containing a lactone moiety and at least one monomer unit containing an absorbing moiety. The inventive antireflective coating composition is preferably organic solvent-strippable, insoluble in an aqueous alkaline developer for the photoresist composition after exposure to an imaging radiation, and inert to contact reactions with the photoresist composition. The present invention also discloses a method of forming patterned material features on a substrate using the compositions of the invention.
摘要翻译： 本发明公开了一种用于在基材表面和光致抗蚀剂组合物之间施加的抗反射涂料组合物。 本发明的抗反射涂料组合物包括聚合物，其包含至少一个含有内酯部分的单体单元和至少一个含有吸收部分的单体单元。 本发明的抗反射涂料组合物优选是有机溶剂可剥离的，在暴露于成像辐射之后不溶于用于光致抗蚀剂组合物的水性碱性显影剂，并且与光致抗蚀剂组合物的接触反应惰性。 本发明还公开了使用本发明的组合物在衬底上形成图案化材料特征的方法。
-
3.发明申请公开(公告)号：US20060105269A1
公开(公告)日：2006-05-18
申请号：US10988137
申请日：2004-11-12
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.
摘要翻译： 公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基 ，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基 或半或全氟取代或未取代的脂族基团; n表示1以上的整数， 和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。 还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。
-
公开(公告)号：US20060105266A1
公开(公告)日：2006-05-18
申请号：US10987530
申请日：2004-11-12
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/40
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
摘要翻译： 使用具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物可获得可在193nm辐射（以及可能的其它辐射）下成像的酸催化的正性抗蚀剂组合物，其包含优选连接于萘酯基团的低活化能部分。 抗蚀剂允许具有低活化能的丙烯酸酯/甲基丙烯酸酯聚合物的性能益处用于成像，从而能够提高分辨率和降低曝光后烘烤灵敏度。 抗蚀剂聚合物还优选含有包含氟代醇部分的单体单元和包含内酯部分的单体单元。
-
公开(公告)号：US20060105267A1
公开(公告)日：2006-05-18
申请号：US10987540
申请日：2004-11-12
IPC分类号： G03C1/76
CPC分类号： G03F7/40 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
摘要翻译： 使用具有包含萘酚酯基的丙烯酸酯/甲基丙烯酸酯单体单元的聚合物获得可用193nm辐射成像的酸催化正性抗蚀剂组合物。 抗蚀剂可任选地含有具有含氟官能团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物。 包含含有萘酚酯基团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物的抗蚀剂具有改进的工艺窗口，与常规含氟193nm抗蚀剂相比，包括改进的耐蚀刻性和降低的溶胀。
-
公开(公告)号：US20050019704A1
公开(公告)日：2005-01-27
申请号：US10920762
申请日：2004-08-18
申请人： Mahmoud Khojasteh , Timothy Hughes , Ranee Kwong , Pushkara Varanasi , William Brunsvold , Margaret Lawson , Robert Allen , David Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud Khojasteh , Timothy Hughes , Ranee Kwong , Pushkara Varanasi , William Brunsvold , Margaret Lawson , Robert Allen , David Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： C08F30/08 , C08F32/00 , C08F230/08 , C08K5/41 , C08K5/54 , C08L43/04 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/09 , G11B5/31 , H01L21/027 , G03F7/00
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
-
公开(公告)号：US07129016B2
公开(公告)日：2006-10-31
申请号：US10987540
申请日：2004-11-12
CPC分类号： G03F7/40 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
-
公开(公告)号：US07183036B2
公开(公告)日：2007-02-27
申请号：US10987530
申请日：2004-11-12
CPC分类号： G03F7/0392 , G03F7/40
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
摘要翻译： 使用具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物可获得可在193nm辐射（以及可能的其它辐射）下成像的酸催化的正性抗蚀剂组合物，其包含优选连接于萘酯基团的低活化能部分。 抗蚀剂允许具有低活化能的丙烯酸酯/甲基丙烯酸酯聚合物的性能益处用于成像，从而能够提高分辨率和降低曝光后烘烤灵敏度。 抗蚀剂聚合物还优选含有包含氟代醇部分的单体单元和包含内酯部分的单体单元。
-
公开(公告)号：US08563408B2
公开(公告)日：2013-10-22
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
-
10.发明授权公开(公告)号：US08455420B2
公开(公告)日：2013-06-04
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
-
-
-
-
-
-
-
-
-
搜索结果
44 条记录 (耗时 0.021 秒)
