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100 条记录 (耗时 0.049 秒)

    Metal CMP process on one or more polishing stations using slurries with oxidizers
    51.
    发明申请
    Metal CMP process on one or more polishing stations using slurries with oxidizers 审中-公开
    使用具有氧化剂的浆料在一个或多个抛光站上进行金属CMP处理

    公开(公告)号：US20060219663A1

    公开(公告)日：2006-10-05

    申请号：US11338146

    申请日：2006-01-23

    申请人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    发明人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

    摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

    Contact assembly cleaning in an electrochemical mechanical processing apparatus
    52.
    发明申请
    Contact assembly cleaning in an electrochemical mechanical processing apparatus 审中-公开
    在电化学机械处理设备中接触组件清洁

    公开(公告)号：US20070084729A1

    公开(公告)日：2007-04-19

    申请号：US11251581

    申请日：2005-10-14

    申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Ricardo Martinez ,  Yan Wang ,  Jose Salas-Vernis

    发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Ricardo Martinez ,  Yan Wang ,  Jose Salas-Vernis

    IPC分类号： C25D21/06

    CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/16 ,  B24B53/017

    摘要： Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.

    摘要翻译： 本发明的实施例通常提供一种用于清洁电化学机械平面化装置中的电接触的方法和装置。 在一个实施例中，用于在电加工设备中清洁接触组件的方法包括以下步骤：从接触组件排出电解液并将冲洗流体流动到接触组件中。 在另一个实施例中，用于清洁电加工设备中的接触组件的方法包括以下步骤：防止流体在接触组件的界面和设置在其外部的垫片之间通过，将冲洗流体流动到接触组件中并排出流出的流体 的接触组件。

    Edge bead removal by an electro polishing process
    53.
    发明申请
    Edge bead removal by an electro polishing process 有权
    通过电抛光工艺去除边缘珠

    公开(公告)号：US20050161341A1

    公开(公告)日：2005-07-28

    申请号：US11087878

    申请日：2005-03-22

    申请人： Alain Duboust ,  Antoine Manens ,  Liang-Yuh Chen

    发明人： Alain Duboust ,  Antoine Manens ,  Liang-Yuh Chen

    IPC分类号： B23H5/02 ,  B23H5/08 ,  B24B37/04

    CPC分类号： B24B37/042 ,  B23H5/08 ,  B24B37/046

    摘要： A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.

    摘要翻译： 公开了一种用于使用构造成电抛光衬底边缘的电极沿着衬底的边缘去除沉积的导电层的方法和装置。 基板边缘的电抛光可以在基板表面的电化学机械处理（Ecmp）期间同时发生。 在一个实施例中，电源在衬底和至少两个电极之间施加偏压。 电极以足够的电位形成靠近衬底边缘的第一电极区域，以电抛光衬底边缘，从而从衬底边缘去除导电层。 具有比第一电极区域低的电位的第二电极区在处理期间靠近衬底面对准以使得衬底面的Ecmp能够被抑制。

    Methods and apparatus for polishing a substrate
    59.
    发明申请
    Methods and apparatus for polishing a substrate 审中-公开
    抛光基材的方法和设备

    公开(公告)号：US20050092620A1

    公开(公告)日：2005-05-05

    申请号：US10957199

    申请日：2004-10-01

    申请人： Rashid Mavliev ,  Alain Duboust ,  Stan Tsai

    发明人： Rashid Mavliev ,  Alain Duboust ,  Stan Tsai

    IPC分类号： B23H5/08 ,  B24B37/04 ,  B24B57/02 ,  C25F3/02 ,  H01L21/321 ,  B23H3/00

    CPC分类号： B24B37/345 ,  B23H5/08 ,  B24B37/042 ,  B24B57/02 ,  C25F3/02 ,  H01L21/32125

    摘要： Polishing compositions and methods for removing conductive material and barrier layer materials from a substrate surface are provided. Generally, variable amounts of abrasive particles are used for removing conductive material and barrier layer materials. In one aspect, a process is provided including providing an polishing composition between the first electrode and the substrate, wherein the polishing composition comprises a first concentration of abrasive particles, applying a bias between the first electrode and the second electrode, providing relative motion between the substrate and the polishing article, removing conductive layer material from the substrate, introducing abrasive particles to the polishing composition to form a second concentration of abrasive particles greater than a first concentration of abrasive particles, and removing barrier layer material from the substrate. The abrasive particles may be incrementally introduced or pulsed during a polishing process.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡层材料的方法。 通常，可用量的磨料颗粒用于去除导电材料和阻挡层材料。 在一个方面，提供了一种方法，包括在第一电极和衬底之间提供抛光组合物，其中抛光组合物包含第一浓度的磨料颗粒，在第一电极和第二电极之间施加偏压， 衬底和抛光制品，从衬底移除导电层材料，将磨料颗粒引入抛光组合物以形成大于第一浓度的磨料颗粒的第二浓度的磨料颗粒，以及从衬底去除阻挡层材料。 研磨颗粒可以在抛光过程中递增地引入或脉冲。

    Method for electrochemically polishing a conductive material on a substrate
    60.
    发明申请
    Method for electrochemically polishing a conductive material on a substrate 审中-公开
    在基板上电化学研磨导电材料的方法

    公开(公告)号：US20070187258A1

    公开(公告)日：2007-08-16

    申请号：US11355769

    申请日：2006-02-15

    申请人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： B23H5/00

    CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

    摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

    摘要翻译： 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。