公开(公告)号：US06924213B2

公开(公告)日：2005-08-02

申请号：US10252393

申请日：2002-09-24

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

摘要翻译： 在通过退火结晶的硅膜上转移图案后，通过强烈射线的辐射短时间对硅膜进行退火。 特别是在通过退火的结晶工艺中，掺杂促进结晶的元素如镍掺杂。 通过退火而未结晶的区域也通过强烈射线的辐射而结晶，形成冷凝的硅膜。 在掺杂促进结晶的金属元素之后，通过在含有卤化物的气氛中退火而结晶化的硅膜上发射强光，进行短时间的光退火。 在硅膜的表面通过加热或通过在卤化气氛中辐射强射线而被氧化并且在硅膜上形成氧化物膜之后，然后蚀刻氧化膜。 结果，硅膜中的镍被去除。

公开(公告)号：US20050146667A1

公开(公告)日：2005-07-07

申请号：US11073752

申请日：2005-03-08

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： G02B5/00 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/786

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/121 ,  G02F2201/40

摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided therebetween. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.

摘要翻译： 提供一种用于有源矩阵型液晶显示器的像素的辅助电容器，而不会降低开口率。 用于公共电极的透明导电膜形成在由透明导电膜构成的像素电极之下，其间设置有绝缘膜。 此外，用于公共电极的透明导电膜保持固定电位，形成为覆盖栅极总线和源极总线，并且被配置为使得每个总线上的信号不被施加到像素电极。 像素电极被设置成使得其所有边缘与栅极总线和源极总线重叠。 结果，每条总线作为黑矩阵。 此外，像素电极与用于公共电极的透明导电膜重叠形成存储电容器。

公开(公告)号：US06881615B2

公开(公告)日：2005-04-19

申请号：US09978696

申请日：2001-10-18

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L31/20 ,  H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

公开(公告)号：US06777763B1

公开(公告)日：2004-08-17

申请号：US09190618

申请日：1998-11-12

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2976

CPC分类号： H01L27/1296 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78618

摘要： In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.

摘要翻译： 在薄膜晶体管（TFT）中，在栅电极上形成掩模，并且使用相对低的电压在栅电极的两侧形成多孔阳极氧化物。 在栅电极和多孔阳极氧化物之间以及使用较高电压的栅电极上形成阻挡阳极氧化物。 使用阻挡阳极氧化物作为掩模蚀刻栅极绝缘膜。 在蚀刻阻挡阳极氧化物之后，选择性地蚀刻多孔阳极氧化物，以获得其上形成有栅极绝缘膜的有源层的区域和不形成栅极绝缘膜的有源层的另一区域。 与活性层的其他区域的浓度相比，包含氧，氮和碳中的至少一种的元素以高浓度被引入活性层的区域。 此外，将N型或P型杂质引入有源层。 因此，在沟道形成区域的两侧形成高电阻杂质区域。

公开(公告)号：US06730549B1

公开(公告)日：2004-05-04

申请号：US09222185

申请日：1998-12-29

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L21336

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

摘要翻译： 公开了一种半导体器件。 半导体器件具有作为有源层区域的晶体硅膜。 结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。 制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

公开(公告)号：US06509212B1

公开(公告)日：2003-01-21

申请号：US09236620

申请日：1999-01-26

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： G02F1/13454 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S148/092

摘要： A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. Also, in a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. On the other hand, the linear laser light to be scanned is irradiated to the remaining circuit region.

公开(公告)号：US06475839B2

公开(公告)日：2002-11-05

申请号：US09779826

申请日：2001-02-09

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成第一绝缘膜，在绝缘膜上形成栅电极，将第一绝缘膜图案化为第二绝缘膜，以使半导体层的一部分露出 而第二绝缘膜具有延伸超过栅电极的侧边缘的延伸，并且使用栅极电极和栅极绝缘膜的延伸作为掩模来执行用于形成杂质区域的离子引入。 离子引入的条件是变化的，以便控制加入杂质的半导体层的区域和其中杂质的浓度。

公开(公告)号：US06358784B1

公开(公告)日：2002-03-19

申请号：US09145543

申请日：1998-09-02

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21331

CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。

公开(公告)号：US06323071B1

公开(公告)日：2001-11-27

申请号：US09233146

申请日：1999-01-19

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管 晶体管，然后通过其热结晶。

公开(公告)号：US06300659B1

公开(公告)日：2001-10-09

申请号：US09459339

申请日：1999-12-13

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.

摘要翻译： 提供具有优异的可靠性和特性的晶体硅有源层的薄膜晶体管（TFT）以及廉价地制造这种TFT的方法。 在具有至少两个低密度杂质区域和与沟道形成区域相邻的源极/漏极的TFT中，在源极/漏极中包括引起非晶硅​​结晶的催化剂元件，并且所述催化剂元件的密度在 沟道形成区域和低浓度杂质区域之间的界面小于源极/漏极中的界面。