公开(公告)号：US07771673B2

公开(公告)日：2010-08-10

申请号：US10561841

申请日：2004-06-25

申请人： Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Takeshi Sakuma ,  Tatsuhiko Hatano ,  Yoshihiro Sato ,  Junichi Suzuki

发明人： Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Takeshi Sakuma ,  Tatsuhiko Hatano ,  Yoshihiro Sato ,  Junichi Suzuki

IPC分类号： B01J19/08

CPC分类号： F01N3/0892 ,  B01D53/32 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0835 ,  B01J2219/0875 ,  B01J2219/0894 ,  B01J2219/2453 ,  B01J2219/2487 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2437

摘要： A plasma generating electrode of the present invention includes a pair of unit electrodes 2, each of the pair of unit electrodes 2 including a plate-like ceramic body 19 and a conductive film 12 disposed inside the ceramic body 19 and including a plurality of protrusions 13 on a front surface, the pair of unit electrodes 2 constituting a basic unit 1 by being hierarchically layered at intervals corresponding to thickness of the protrusion 13 in a state that a plurality of spaces which are open on each end in the arrangement direction of the protrusion are formed, the basic units 1 constituting an electrode unit in which the basic units 1 are hierarchically layered at intervals corresponding to the thickness of the protrusion 13, and the plasma generating electrode being capable of generating plasma in the three-dimensionally arranged spaces V upon application of voltage between the unit electrodes 2 constituting the electrode unit. Therefore, the plasma generating electrode is capable of generating uniform and stable plasma and exhibiting excellent heat resistance.

摘要翻译： 本发明的等离子体产生电极包括一对单位电极2，每对单元电极2包括板状陶瓷体19和布置在陶瓷体19内部的导电膜12，并且包括多个突起13 在前表面上，构成基本单元1的一对单元电极2通过以与突起13的厚度相对应的间隔对应于在突起的排列方向上的每个端部开口的多个空间的状态而分层地层叠 构成电极单元的基本单元1，其中基本单元1以对应于突起13的厚度的间隔分层地层叠，并且等离子体产生电极能够在三维布置的空间V中产生等离子体 在构成电极单元的单位电极2之间施加电压。 因此，等离子体产生电极能够产生均匀且稳定的等离子体并且表现出优异的耐热性。

公开(公告)号：US07755145B2

公开(公告)日：2010-07-13

申请号：US12028258

申请日：2008-02-08

申请人： Yoshihiro Sato ,  Kazuhiko Yamamoto

发明人： Yoshihiro Sato ,  Kazuhiko Yamamoto

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/7843

摘要： A semiconductor device includes an n-type MIS (Metal Insulator Semiconductor) transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate insulating film, a first fully silicided (FUSI) gate electrode formed on the first gate insulating film and made of a first metal silicide film, and a first sidewall insulating film. The p-type MIS transistor includes a second gate insulating film, a second fully silicided (FUSI) gate electrode formed on the second gate insulating film and made of a second metal silicide film, and a second sidewall insulating film. A top surface of the first FUSI gate electrode is located lower than a top surface of the second FUSI gate electrode.

摘要翻译： 半导体器件包括n型MIS（金属绝缘体半导体）晶体管和p型MIS晶体管。 n型MIS晶体管包括第一栅极绝缘膜，形成在第一栅极绝缘膜上并由第一金属硅化物膜制成的第一完全硅化（FUSI）栅电极和第一侧壁绝缘膜。 p型MIS晶体管包括第二栅极绝缘膜，形成在第二栅极绝缘膜上并由第二金属硅化物膜制成的第二完全硅化（FUSI）栅电极和第二侧壁绝缘膜。 第一FUSI栅电极的顶表面位于比第二FUSI栅电极的顶表面更低的位置。

公开(公告)号：US20080213656A1

公开(公告)日：2008-09-04

申请号：US11722918

申请日：2005-12-26

申请人： Takayoshi Yamasaki ,  Hiroaki Sato ,  Toshiaki Ueda ,  Tomonori Watanabe ,  Yoichi Miyajima ,  Masayuki Ishii ,  Shoichi Shintani ,  Yoshihiro Sato

发明人： Takayoshi Yamasaki ,  Hiroaki Sato ,  Toshiaki Ueda ,  Tomonori Watanabe ,  Yoichi Miyajima ,  Masayuki Ishii ,  Shoichi Shintani ,  Yoshihiro Sato

IPC分类号： H01M2/30 ,  H02J7/00

CPC分类号： H01M2/1061 ,  H01M2/30 ,  H01M2/342 ,  H01M10/46

摘要： In a battery (2) including a battery cell formed in a flattened substantially parallelepiped shape and a terminal contacting section (222) electrically connected to the battery cell, at one end in the longitudinal direction of a face of the battery opposing to the face on which the terminal contacting section (222) is provided, a projecting portion (26) which projects in the longitudinal direction of the face is provided. Meanwhile, another projecting portion (27) which projects in the longitudinal direction of the face is provided at the other end. The projecting portions (26, 27) may have projecting lengths different from each other or may have projecting lengths and projecting thicknesses different from each other. A charging apparatus into which the battery (2) is to be installed includes an accommodating section (40) for the battery (2) which in turn includes projection accommodating portions (46 and 47) configured to individually accommodate the projecting portions (26 and 27). The accommodating section (40) includes a space for accommodating a battery (2D, 2E) wherein the battery cell has a rectangular principal face and another space for accommodating another battery (2) wherein the battery cell has a substantially square principal face, and charging terminals serve as charging terminals not only for the battery (2) but also for the battery (2D, 2E).

摘要翻译： 在包括形成为平坦的平行六面体形状的电池单体的电池（2）和电连接到电池单元的端子接触部分（222）中，在电池的与面对面相对的面的纵向方向上的一端 设置有端子接触部分（222），在面部的纵向方向上突出的突出部分（26）。 同时，在另一端设置有在面的纵向突出的另一突出部分（27）。 突出部分（26,27）可以具有彼此不同的突出长度，或者可以具有彼此不同的突出长度和突出厚度。 要安装电池（2）的充电装置包括用于电池（2）的容纳部分（40），所述容纳部分又包括突出容纳部分（46和47），其被构造成分别容纳突出部分（26和27） ）。 容纳部分（40）包括用于容纳电池（1,2D，2E）的空间，其中电池单元具有矩形主面和用于容纳另一电池（2）的另一空间，其中电池单元具有基本上正方形的主面， 并且充电端子不仅用作电池（2），而且用作电池（2D，2E）的充电端子。

公开(公告)号：US20080073733A1

公开(公告)日：2008-03-27

申请号：US11819192

申请日：2007-06-26

申请人： Chiaki Kudo ,  Yoshihiro Sato

发明人： Chiaki Kudo ,  Yoshihiro Sato

IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L29/76

CPC分类号： H01L21/823443 ,  H01L21/28097 ,  H01L21/823425 ,  H01L21/823456 ,  H01L21/823468 ,  H01L29/4975 ,  H01L29/665

摘要： A semiconductor device includes a MIS transistor having a gate electrode which is fully silicided with metal. The edge parts of the gate electrode are lower in height than the other part thereof. Sidewall spacers are formed to cover the side and top surfaces of the edge parts of the gate electrode.

摘要翻译： 半导体器件包括具有完全用金属硅化的栅电极的MIS晶体管。 栅电极的边缘部分的高度低于其他部分。 形成侧壁间隔件以覆盖栅电极的边缘部分的侧表面和顶表面。

公开(公告)号：US07343690B2

公开(公告)日：2008-03-18

申请号：US10579495

申请日：2004-11-16

申请人： Yoshihiro Sato ,  Tadayoshi Yasui ,  Akihiro Mizutani

发明人： Yoshihiro Sato ,  Tadayoshi Yasui ,  Akihiro Mizutani

IPC分类号： G01B5/207

CPC分类号： G01B7/287 ,  B01D2273/18 ,  G01B5/207

摘要： A shape-measuring device 1 measures the shape of a object to be measured 1 in which segments are arranged and bonded in rows while relatively moving the object 1 in one direction. The shape-measuring device includes rollers 31 provided corresponding to the rows of segments and displaced to follow unevenness of an end face 1a of the object while being rotated on the end face 1a due to the relative movement, detection means 35 provided corresponding to each roller 31 and detecting the amount of displacement of each roller 31, and calculation means 37 for calculating shape data of the object 1 based on the amount of displacement of the roller 31 detected by the detection means 35. The shape-measuring device 1 can accurately and promptly measure the shape of the object such as a DPF in which segments are bonded in rows.

摘要翻译： 形状测量装置1测量在将物体1沿一个方向相对移动的同时以行排列并结合的被测量物体1的形状。 形状测量装置包括对应于这些行段设置的辊31，并且随着相对移动而在端面1a上旋转的同时移动以跟随物体的端面1a的不平坦，检测装置35对应于 每个辊31并检测每个辊31的位移量，以及用于根据由检测装置35检测到的辊31的位移量来计算物体1的形状数据的计算装置37。 形状测量装置1可以精确地并且快速地测量诸如DPF的物体的形状，其中段被结合成行。

公开(公告)号：US20080023774A1

公开(公告)日：2008-01-31

申请号：US11806881

申请日：2007-06-05

申请人： Yoshihiro Sato ,  Hisashi Ogawa

发明人： Yoshihiro Sato ,  Hisashi Ogawa

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L21/823481 ,  H01L21/28097 ,  H01L21/28123 ,  H01L21/823475 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region of the semiconductor substrate; a fully silicided first gate line formed on the active region; a fully silicided second gate line formed on the isolation region; a first sidewall formed on a side of the first gate line; a second sidewall formed on a side of the second gate line. The length between the top and bottom surfaces of the first sidewall is different from that between the top and bottom surfaces of the second sidewall.

摘要翻译： 半导体器件包括：形成在半导体衬底中的隔离区; 由半导体衬底的隔离区包围的有源区; 形成在有源区上的完全硅化的第一栅极线; 形成在隔离区上的完全硅化的第二栅极线; 第一侧壁，形成在所述第一栅极线的一侧上; 形成在第二栅极线的一侧上的第二侧壁。 第一侧壁的顶表面和底表面之间的长度不同于第二侧壁的顶表面和底表面之间的长度。

公开(公告)号：US07145930B2

公开(公告)日：2006-12-05

申请号：US10867731

申请日：2004-06-16

申请人： Yukio Honkawa ,  Takahiro Ono ,  Satoshi Hattori ,  Yoshihiro Sato

发明人： Yukio Honkawa ,  Takahiro Ono ,  Satoshi Hattori ,  Yoshihiro Sato

IPC分类号： H01S5/00

CPC分类号： H01L21/02392 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/32308 ,  H01S2304/04

摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

公开(公告)号：US06813538B2

公开(公告)日：2004-11-02

申请号：US10128124

申请日：2002-04-23

申请人： Daisuke Higuchi ,  Yasuhiro Obara ,  Yoshihiro Sato

发明人： Daisuke Higuchi ,  Yasuhiro Obara ,  Yoshihiro Sato

IPC分类号： G06F1900

CPC分类号： B23K11/241 ,  B23K9/0953 ,  B23K9/0956 ,  B23K9/1056 ,  B23K11/252

摘要： A welding system is capable of shortening length of connection lines and of effectively utilizing devices as a whole. The system includes a welding controller provided with an I/O interface, a controller unit provided with a programmable logic controller and connected to the I/O interface of the welding controller through a field bus interface serving as a communication link, a welding machine and general-purpose peripheral equipment. The welding controller controls the welding machine and the general-purpose peripheral equipment upon receipt of instructions from the programmable logic controller through the field bus interface.

摘要翻译： 一种焊接系统能够缩短连接线的长度并有效地利用整体装置。 该系统包括具有I / O接口的焊接控制器，具有可编程逻辑控制器的控制器单元，并通过用作通信链路的现场总线接口连接到焊接控制器的I / O接口，焊接机和 通用外围设备。 焊接控制器通过现场总线接口接收到来自可编程逻辑控制器的指令时，控制焊机和通用外围设备。

公开(公告)号：US06639630B2

公开(公告)日：2003-10-28

申请号：US09494960

申请日：2000-02-01

申请人： Shigeru Osada ,  Masaki Yamamoto ,  Yoshihiro Sato

发明人： Shigeru Osada ,  Masaki Yamamoto ,  Yoshihiro Sato

IPC分类号： H04N544

CPC分类号： H04N5/44 ,  H03J5/244

摘要： A switch circuit is provided for at least one of a previous stage of a VHF-band frequency converter and a previous stage of a UHF-band frequency converter. Each switch circuit passes a signal when a frequency converter at a subsequent stage of the switch circuit is operating, and does not pass a signal when the frequency converter at the subsequent stage of the switch circuit is not operating.

摘要翻译： 为VHF频带变频器的前一级和UHF频带变频器的前一级中的至少一个提供开关电路。 当开关电路的后续阶段的变频器工作时，每个开关电路通过信号，并且在开关电路的后续阶段的变频器不工作时不通过信号。

公开(公告)号：US06510122B1

公开(公告)日：2003-01-21

申请号：US09210544

申请日：1998-12-14

申请人： Yoshiaki Yamauchi ,  Hisahiro Miki ,  Shigeki Mori ,  Shinobu Yoshida ,  Takashi Kouno ,  Yoshihiro Sato ,  Kuniyuki Kimura

发明人： Yoshiaki Yamauchi ,  Hisahiro Miki ,  Shigeki Mori ,  Shinobu Yoshida ,  Takashi Kouno ,  Yoshihiro Sato ,  Kuniyuki Kimura

IPC分类号： G11B1702

CPC分类号： G11B17/028 ,  G11B17/0285 ,  G11B33/08

摘要： Disk storage devices have exhibited an increase in rotational vibrations which attend high speed rotation due to weight unbalance of a disk. Accordingly, an unbalance correcting mechanism, provided with correcting balls to correct the aforesaid unbalance, meets a problem that the correcting balls are made unstable at the time of low speed rotation to generate vibrations and noises. A disk drive device is provided with an unbalance correcting mechanism comprising an annular-shaped groove provided in a turntable on a spindle motor and a plurality of correcting balls received in the groove, and in which a sliding resistance member is provided on a bottom surface of the annular-shaped groove to suppress a sliding resistance of the correcting balls on the sliding resistance member, and a correcting ball motion auxiliary member is provided on an inner peripheral side wall of the groove (toward an axis of rotation).

摘要翻译： 磁盘存储设备已经表现出由于盘的重量不平衡而引起高速旋转的旋转振动的增加。 因此，设置有用于校正上述不平衡的校正球的不平衡校正机构遇到了在低速旋转时校正球变得不稳定以产生振动和噪声的问题。 磁盘驱动装置设置有不平衡校正机构，该不平衡校正机构包括设置在主轴电动机的转台上的环形槽和容纳在槽中的多个校正球，并且其中滑动阻力构件设置在 在所述凹槽（朝向旋转轴线）的内周侧壁上设置有抑制所述滑动阻力构件上的所述校正球的滑动阻力的环形槽和校正球运动辅助构件。