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158 条记录 (耗时 0.026 秒)

    Semiconductor device and manufacturing method thereof
    1.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07755145B2

    公开(公告)日：2010-07-13

    申请号：US12028258

    申请日：2008-02-08

    申请人： Yoshihiro Sato ,  Kazuhiko Yamamoto

    发明人： Yoshihiro Sato ,  Kazuhiko Yamamoto

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/7843

    摘要： A semiconductor device includes an n-type MIS (Metal Insulator Semiconductor) transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate insulating film, a first fully silicided (FUSI) gate electrode formed on the first gate insulating film and made of a first metal silicide film, and a first sidewall insulating film. The p-type MIS transistor includes a second gate insulating film, a second fully silicided (FUSI) gate electrode formed on the second gate insulating film and made of a second metal silicide film, and a second sidewall insulating film. A top surface of the first FUSI gate electrode is located lower than a top surface of the second FUSI gate electrode.

    摘要翻译： 半导体器件包括n型MIS（金属绝缘体半导体）晶体管和p型MIS晶体管。 n型MIS晶体管包括第一栅极绝缘膜，形成在第一栅极绝缘膜上并由第一金属硅化物膜制成的第一完全硅化（FUSI）栅电极和第一侧壁绝缘膜。 p型MIS晶体管包括第二栅极绝缘膜，形成在第二栅极绝缘膜上并由第二金属硅化物膜制成的第二完全硅化（FUSI）栅电极和第二侧壁绝缘膜。 第一FUSI栅电极的顶表面位于比第二FUSI栅电极的顶表面更低的位置。

    FUEL CELL SYSTEM
    3.
    发明申请
    FUEL CELL SYSTEM 审中-公开
    燃油电池系统

    公开(公告)号：US20130196242A1

    公开(公告)日：2013-08-01

    申请号：US13824910

    申请日：2012-07-11

    申请人： Susumu Hatano ,  Yoshio Tamura ,  Yoshihiro Sato ,  Manabu Takahashi ,  Takaaki Fujikawa

    发明人： Susumu Hatano ,  Yoshio Tamura ,  Yoshihiro Sato ,  Manabu Takahashi ,  Takaaki Fujikawa

    IPC分类号： H01M8/04

    CPC分类号： H01M8/04089 ,  F04B17/042 ,  F04B43/04 ,  F04B45/047 ,  H01M8/04228 ,  H01M8/04425 ,  H01M8/04753 ,  H01M8/04776

    摘要： A fuel cell system (1) includes a fuel cell (7), an electromagnetic diaphragm pump (8), a flow detector (9), and a controller (20). The controller is configured to set the frequency of the AC voltage (applied AC voltage) applied to the electromagnetic diaphragm pump, control the voltage of the applied AC voltage in the set frequency to cause the flow rate of the gas detected by the flow detector to reach a target flow rate; and the controller is configured to newly set the frequency of the applied AC voltage to a frequency at which the voltage of the applied AC voltage becomes smaller than a predetermined voltage when the voltage of the applied AC voltage becomes equal to or greater than the predetermined voltage.

    摘要翻译： 燃料电池系统（1）包括燃料电池（7），电磁隔膜泵（8），流量检测器（9）和控制器（20）。 控制器被配置为设置施加到电磁隔膜泵的交流电压（施加的交流电压）的频率，控制施加的交流电压在设定频率中的电压，以使由流量检测器检测的气体的流量 达到目标流量; 并且所述控制器被配置为当所施加的AC电压的电压变得等于或大于所述预定电压时，将所施加的AC电压的频率重新设置为施加的AC电压的电压变得小于预定电压的频率 。

    Method for forming insulating film and method for manufacturing semiconductor device
    7.
    发明授权
    Method for forming insulating film and method for manufacturing semiconductor device 失效
    绝缘膜的形成方法及半导体装置的制造方法

    公开(公告)号：US08247331B2

    公开(公告)日：2012-08-21

    申请号：US12521645

    申请日：2007-12-20

    申请人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

    发明人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

    IPC分类号： H01L21/318 ,  H01L21/321

    CPC分类号： H01L21/28202 ,  H01J37/32192 ,  H01L21/67109 ,  H01L21/67115

    摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.

    摘要翻译： 一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。 该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

    OPTICAL PICKUP DEVICE
    8.
    发明申请
    OPTICAL PICKUP DEVICE 审中-公开
    光学拾取器件

    公开(公告)号：US20110182163A1

    公开(公告)日：2011-07-28

    申请号：US13012103

    申请日：2011-01-24

    申请人： Wataru SATO ,  Yoshihiro Sato ,  Yusuke Kogure

    发明人： Wataru SATO ,  Yoshihiro Sato ,  Yusuke Kogure

    IPC分类号： G11B7/12 ,  G11B33/02

    CPC分类号： G11B7/127

    摘要： The following problem associated with optical pickup devices is solved: the temperature of a laser element is increased by excessive temperature rise in a laser driver circuit and this degrades the quality of writing and reading information to and from an optical disc. In an optical pickup enclosure, there is formed a groove recessed into a U shape, extended from the upper surface thereof opposed to an optical disc to the lower surface of the optical pickup enclosure. An air guide passage through which an air flow is passed is formed of this groove recessed into a U shape and a circuit board fastened to the outer circumferential side of the optical pickup enclosure with a screw. At this time, the laser driver circuit element is attached to the side of the circuit board opposed to the air guide passage. In a radiation cover attached to the upper surface of the optical pickup enclosure and in thermal contact with the laser element, an opening is formed. This opening is substantially identical in shape with the aperture area in the air guide passage and is located in a position corresponding to the opening of the air guide passage in the upper surface of the optical pickup enclosure. Thus the air guide passage continues from the opening in the lower surface of the optical pickup enclosure to the surface opposed to the optical disc.

    摘要翻译： 解决了与光学拾取装置相关的以下问题：激光驱动电路中的激光元件的温度过高会升高，从而降低向光盘的写入和读取信息的质量。 在光学拾取器外壳中，形成凹陷成U形的凹槽，其从与光盘相对的上表面延伸到光学拾取器外壳的下表面。 空气流通过的空气引导通道由凹陷成U形的凹槽和用螺钉固定到光学拾取器外壳的外周侧的电路板形成。 此时，激光驱动电路元件被安装在与引导通道相对的电路板侧。 在附接到光学拾取器外壳的上表面并与激光元件热接触的辐射罩中，形成开口。 该开口的形状与空气引导通道中的开口面积基本相同，并且位于与光学拾取器外壳的上表面中的空气引导通道的开口相对应的位置。 因此，空气引导通道从光拾取器外壳的下表面中的开口延伸到与光盘相对的表面。

    Semiconductor device and fabrication method for the same
    9.
    发明授权
    Semiconductor device and fabrication method for the same 有权
    半导体器件及其制造方法相同

    公开(公告)号：US07977800B2

    公开(公告)日：2011-07-12

    申请号：US12247518

    申请日：2008-10-08

    申请人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

    发明人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

    IPC分类号： H01L21/8234

    CPC分类号： H01L23/535 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/11 ,  H01L29/161 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

    摘要翻译： 半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。 栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。