公开(公告)号：US06639630B2

公开(公告)日：2003-10-28

申请号：US09494960

申请日：2000-02-01

申请人： Shigeru Osada ,  Masaki Yamamoto ,  Yoshihiro Sato

发明人： Shigeru Osada ,  Masaki Yamamoto ,  Yoshihiro Sato

IPC分类号： H04N544

CPC分类号： H04N5/44 ,  H03J5/244

摘要： A switch circuit is provided for at least one of a previous stage of a VHF-band frequency converter and a previous stage of a UHF-band frequency converter. Each switch circuit passes a signal when a frequency converter at a subsequent stage of the switch circuit is operating, and does not pass a signal when the frequency converter at the subsequent stage of the switch circuit is not operating.

摘要翻译： 为VHF频带变频器的前一级和UHF频带变频器的前一级中的至少一个提供开关电路。 当开关电路的后续阶段的变频器工作时，每个开关电路通过信号，并且在开关电路的后续阶段的变频器不工作时不通过信号。

公开(公告)号：US06392715B1

公开(公告)日：2002-05-21

申请号：US09133003

申请日：1998-08-12

申请人： Yoshihiro Sato ,  Masaki Yamamoto ,  Hideo Nishi ,  Fumiaki Miyamitsu

发明人： Yoshihiro Sato ,  Masaki Yamamoto ,  Hideo Nishi ,  Fumiaki Miyamitsu

IPC分类号： H04N550

CPC分类号： H03J5/244

摘要： There is provided a UHF/VHF tuner in which complication in structure and increase in manufacturing costs are suppressed and broadcast receiving performance is improved by reducing variation in the reception sensitivity according to frequency when broadcast in the VHF band is received. In a UHF/VHF tuner for receiving both of a broadcast in the UHF band and a broadcast in the VHF band, one mixer and one UHF local oscillator are used for the broadcast in the UHF band, and one mixer, a VHF high-band local oscillator which is switched to be connected when the high band is selected and a VHF low-band local oscillator which is switched to be connected when the low band is selected are used for the broadcast in the VHF band.

摘要翻译： 提供一种UHF / VHF调谐器，其中结构的复杂化和制造成本的增加被抑制，并且通过在接收到VHF频带中的广播时，根据频率减小接收灵敏度的变化来改善广播接收性能。 在用于接收UHF频带的广播和VHF频带的广播的UHF / VHF调谐器中，一个混频器和一个UHF本地振荡器用于UHF频带中的广播，一个混频器，VHF高频带 当选择高频带时被切换为连接的本地振荡器和在选择低频带时切换为连接的VHF低频本地振荡器用于VHF频带中的广播。

公开(公告)号：US09343655B2

公开(公告)日：2016-05-17

申请号：US13279331

申请日：2011-10-24

申请人： Hisao Hori ,  Yoshikazu Abe ,  Yoshihiro Sato

发明人： Hisao Hori ,  Yoshikazu Abe ,  Yoshihiro Sato

IPC分类号： H01L41/09 ,  H01L41/22 ,  H01L41/331 ,  H01L41/08 ,  H01H49/00 ,  H01H57/00 ,  H01L41/047 ,  H01L41/29 ,  H01L41/318 ,  H01L41/332 ,  H03H9/56 ,  H03H9/58 ,  H03H9/60

CPC分类号： H01L41/331 ,  H01H49/00 ,  H01H57/00 ,  H01H2057/006 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/22 ,  H01L41/29 ,  H01L41/318 ,  H01L41/332 ,  H03H9/568 ,  H03H9/584 ,  H03H9/585 ,  H03H9/605 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49147 ,  Y10T29/49155

摘要： To manufacture a switching apparatus that includes a piezoelectric actuator with increased lifespan, provided is a method for manufacturing a bimorph actuator, comprising first piezoelectric element layer formation of forming a first piezoelectric element layer on a substrate; support layer formation of forming a support layer made of an insulator on the first piezoelectric element layer; second piezoelectric element layer formation of forming a second piezoelectric element layer on the support layer; and removal of removing a portion of the substrate to form an actuator that includes the first piezoelectric element layer, the support layer, and the second piezoelectric element layer.

摘要翻译： 为了制造包括具有增加的寿命的压电致动器的开关装置，提供了一种制造双压电晶片致动器的方法，包括在基板上形成第一压电元件层的第一压电元件层形成; 在所述第一压电元件层上形成由绝缘体制成的支撑层的支撑层形成; 在所述支撑层上形成第二压电元件层的第二压电元件层形成; 以及去除去除基板的一部分以形成包括第一压电元件层，支撑层和第二压电元件层的致动器。

公开(公告)号：US20130196242A1

公开(公告)日：2013-08-01

申请号：US13824910

申请日：2012-07-11

申请人： Susumu Hatano ,  Yoshio Tamura ,  Yoshihiro Sato ,  Manabu Takahashi ,  Takaaki Fujikawa

发明人： Susumu Hatano ,  Yoshio Tamura ,  Yoshihiro Sato ,  Manabu Takahashi ,  Takaaki Fujikawa

IPC分类号： H01M8/04

CPC分类号： H01M8/04089 ,  F04B17/042 ,  F04B43/04 ,  F04B45/047 ,  H01M8/04228 ,  H01M8/04425 ,  H01M8/04753 ,  H01M8/04776

摘要： A fuel cell system (1) includes a fuel cell (7), an electromagnetic diaphragm pump (8), a flow detector (9), and a controller (20). The controller is configured to set the frequency of the AC voltage (applied AC voltage) applied to the electromagnetic diaphragm pump, control the voltage of the applied AC voltage in the set frequency to cause the flow rate of the gas detected by the flow detector to reach a target flow rate; and the controller is configured to newly set the frequency of the applied AC voltage to a frequency at which the voltage of the applied AC voltage becomes smaller than a predetermined voltage when the voltage of the applied AC voltage becomes equal to or greater than the predetermined voltage.

摘要翻译： 燃料电池系统（1）包括燃料电池（7），电磁隔膜泵（8），流量检测器（9）和控制器（20）。 控制器被配置为设置施加到电磁隔膜泵的交流电压（施加的交流电压）的频率，控制施加的交流电压在设定频率中的电压，以使由流量检测器检测的气体的流量 达到目标流量; 并且所述控制器被配置为当所施加的AC电压的电压变得等于或大于所述预定电压时，将所施加的AC电压的频率重新设置为施加的AC电压的电压变得小于预定电压的频率 。

公开(公告)号：US08409961B2

公开(公告)日：2013-04-02

申请号：US13055154

申请日：2009-07-08

申请人： Takuya Sugawara ,  Yoshihiro Sato

发明人： Takuya Sugawara ,  Yoshihiro Sato

IPC分类号： H01L21/20

CPC分类号： H01L21/76886 ,  H01L21/76849 ,  H01L21/76862 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.

摘要翻译： 氮化钛膜的改变方法包括将形成在半导体衬底上的氮化钛膜暴露于通过激发包含惰性气体或氮气的处理气体而获得的等离子体，并排除氧气，从而提高氮化钛膜的电阻率。

公开(公告)号：US20130032819A1

公开(公告)日：2013-02-07

申请号：US13582229

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/51

CPC分类号： H01L21/28264 ,  C23C16/403 ,  C23C16/4488 ,  H01L21/02178 ,  H01L21/02277 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

摘要翻译： 根据本发明的半导体晶体管包括由有源层形成的GaN基半导体和栅极绝缘膜构成的有源层。 栅极绝缘膜具有包含一种或多种选自Al 2 O 3，HfO 2，ZrO 2，La 2 O 3和Y 2 O 3的化合物的第一绝缘膜和形成在第一绝缘膜上的由SiO 2构成的第二绝缘膜 。

公开(公告)号：US20130012033A1

公开(公告)日：2013-01-10

申请号：US13636030

申请日：2011-03-09

申请人： Yoshiro Kabe ,  Shuichiro Otao ,  Yoshihiro Sato

发明人： Yoshiro Kabe ,  Shuichiro Otao ,  Yoshihiro Sato

IPC分类号： H01L21/316 ,  C23C16/511

CPC分类号： H01L21/02164 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02236 ,  H01L21/32105

摘要： A silicon oxide film forming method includes forming a silicon oxide film by allowing a plasma of a processing gas to react on a silicon exposed on a surface of a target object to be processed in a processing chamber of a plasma processing apparatus. The processing gas includes an ozone-containing gas having a volume ratio of O3 to a total volume of O2 and O3, ranging 50% or more.

摘要翻译： 氧化硅膜形成方法包括通过使处理气体的等离子体在暴露于待处理对象物体的表面上的硅上在等离子体处理装置的处理室中反应来形成氧化硅膜。 处理气体包括体积比为O 3与O 2和O 3的总体积比为50％以上的含臭氧气体。

公开(公告)号：US08247331B2

公开(公告)日：2012-08-21

申请号：US12521645

申请日：2007-12-20

申请人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

发明人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

IPC分类号： H01L21/318 ,  H01L21/321

CPC分类号： H01L21/28202 ,  H01J37/32192 ,  H01L21/67109 ,  H01L21/67115

摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.

摘要翻译： 一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。 该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

公开(公告)号：US20110182163A1

公开(公告)日：2011-07-28

申请号：US13012103

申请日：2011-01-24

申请人： Wataru SATO ,  Yoshihiro Sato ,  Yusuke Kogure

发明人： Wataru SATO ,  Yoshihiro Sato ,  Yusuke Kogure

IPC分类号： G11B7/12 ,  G11B33/02

CPC分类号： G11B7/127

摘要： The following problem associated with optical pickup devices is solved: the temperature of a laser element is increased by excessive temperature rise in a laser driver circuit and this degrades the quality of writing and reading information to and from an optical disc. In an optical pickup enclosure, there is formed a groove recessed into a U shape, extended from the upper surface thereof opposed to an optical disc to the lower surface of the optical pickup enclosure. An air guide passage through which an air flow is passed is formed of this groove recessed into a U shape and a circuit board fastened to the outer circumferential side of the optical pickup enclosure with a screw. At this time, the laser driver circuit element is attached to the side of the circuit board opposed to the air guide passage. In a radiation cover attached to the upper surface of the optical pickup enclosure and in thermal contact with the laser element, an opening is formed. This opening is substantially identical in shape with the aperture area in the air guide passage and is located in a position corresponding to the opening of the air guide passage in the upper surface of the optical pickup enclosure. Thus the air guide passage continues from the opening in the lower surface of the optical pickup enclosure to the surface opposed to the optical disc.

摘要翻译： 解决了与光学拾取装置相关的以下问题：激光驱动电路中的激光元件的温度过高会升高，从而降低向光盘的写入和读取信息的质量。 在光学拾取器外壳中，形成凹陷成U形的凹槽，其从与光盘相对的上表面延伸到光学拾取器外壳的下表面。 空气流通过的空气引导通道由凹陷成U形的凹槽和用螺钉固定到光学拾取器外壳的外周侧的电路板形成。 此时，激光驱动电路元件被安装在与引导通道相对的电路板侧。 在附接到光学拾取器外壳的上表面并与激光元件热接触的辐射罩中，形成开口。 该开口的形状与空气引导通道中的开口面积基本相同，并且位于与光学拾取器外壳的上表面中的空气引导通道的开口相对应的位置。 因此，空气引导通道从光拾取器外壳的下表面中的开口延伸到与光盘相对的表面。

公开(公告)号：US07977800B2

公开(公告)日：2011-07-12

申请号：US12247518

申请日：2008-10-08

申请人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

发明人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

IPC分类号： H01L21/8234

CPC分类号： H01L23/535 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/11 ,  H01L29/161 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

摘要翻译： 半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。 栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。