摘要:
A data processor which includes a first processor for executing a first instruction set and a second processor for executing a second instruction set different from the first instruction set. When the first processor executes a predetermined instruction of the first instruction set the second processor executes an instruction of the second instructions set. The first processor may be a reduced instruction set computer (RISC) type processor, the second processor may be a very long instruction word (VLIW) type processor, the first instruction set may be a RISC instruction set and the second instruction set may be a VLIW instruction set. The predetermined instruction of the RISC instruction set executed by the first processor may be a branch instruction causing a branch to a specific address space at which VLIW instructions are stored. Thereafter, the VLIW instructions at the specific address space are executed by the VLIW type processor.
摘要:
In an image displaying field where there is a tendency which will increase the data to be handled in accordance with the high integration of a display device, a CRT controller according to the present invention improves the superposed display and the responsiveness of the display and drawing operations by dividing a unit clock into a predetermined number to function with high speed and a multifunction display. When image data are to be inputted to or outputted from a refresh memory corresponding to a display frame, the memory content and the display address are assigned at a ratio of 1:n to effect the processings in parallel. As a result, the time period utilized by the display cycle of the prior art can be assigned to the drawing operation so that the processing can be speeded up while making it easier than the prior art to effect the superposed display of letters, symbols and drawings. The resultant effect is that it is unnecessary to increase the number of refresh memories corresponding to the displayed frame and that the external parts can be simplified to contribute to the improvement in the reliability.
摘要:
A graphic data generating apparatus includes a data processor, a graphic memory, and a graphic processor. The data processor outputs instructions to the graphic processor for processing graphic data. The instructions include a drawing instruction for transferring graphic data stored in a predetermined location in the graphic memory to another predetermined location in the graphic memory. The graphic memory stores pixel data defining the graphic data and each of the pixel data having a plurality of bits. The graphic processor performing read out of word data having a plurality of pixel data at a word position of the graphic memory specified by a source memory address, selecting pixel data specified by a source pixel address in the readout word and writing the selected pixel data in the graphic memory at a pixel position specified by a destination pixel address of word data specified by the destination memory address.
摘要:
An instruction is constituted by a plurality of words, minimum necessary information necessary for effective address calculation of an operand is stored in a leading word and a word or words containing an operation specification field (operation words) are arranged to continue the first word. According to this system, the operation word can be decoded concurrently with the address calculation of the operand or the operand fetch operation. Therefore, there is no need to secure a time exclusively for decoding the operation word and the execution speed of the instruction requiring the operand can be improved.
摘要:
A semiconductor integrated circuit is provided for performing an arithmetic operation using an arithmetic operation circuit. The integrated circuit includes a read bus for connecting the arithmetic operation circuit with a plurality of registers which store input data and/or output data of said arithmetic operation circuit. A precharge and sense circuit connects said arithmetic operation circuit to said read bus. The precharge and sense circuit includes a precharge circuit to precharge the read bus to a first level before the read operation, and a sense circuit to detect that the level of the read bus has discharged to a second, lower level after the read operation begins. In this way, the integrated circuit can detect very slight potential variations on said read bus.
摘要:
In a semiconductor integrated circuit, drain-source paths of an NMOS transistor and a PMOS transistor are connected between the base and emitter of a bipolar transistor, and control signals are applied to gates of the NMOS transistor and the PMOS transistor so as to keep the NMOS transistor and the PMOS transistor at OFF condition when the bipolar transistor is operating and so as to keep the NMOS transistor and the PMOS transistor at ON condition when the bipolar transistor is in the quiescent state.
摘要:
A dynamic logic circuit is provided which is arranged to realize high speed operation. At least one bipolar transistor is provided having a collector, a base and an emitter, with the collector-emitter current path connected between the output of the dynamic logic circuit and a first potential. A precharging device is coupled between a second potential and the output of the dynamic logic circuit to precharge the output according to at least one clock signal which periodically changes its state. Further, at least two field-effect transistors are provided, wherein one assumes an on or off state opposite to that of the precharging means in response to the clock signal while the other operates in response to at least one input signal. The two field-effect transistors have their source-drain current paths connected between the output of the dynamic logic circuit and the base of the bipolar transistor.
摘要:
A semiconductor memory is provided including a plurality of row lines, memory cells driven by selecting a row line, sense amplifiers connected to the memory cells via column lines, and a column line voltage setting circuit for setting a predetermined voltage on the column lines. The predetermined voltage is defined by a voltage necessary to activate semiconductor switch elements constituting the column line voltage setting circuit, and is made nearly equal to the threshold voltage of the sense amplifiers. Thus, a high-speed, low power consumption semiconductor memory can be realized.
摘要:
The invention relates to a digital data processor based upon the pipeline control system, which is particularly effective when the time required for reading a microprogram is relatively short. A microcycle is based upon the time required for reading the microprogram, and the operations on the data is executed in a pipeline system by dividing it up according to the determined microcycle. This is done by providing a destination latch register on the output side of the arithmetic unit. The invention further deals with the processors in which the destination latch register is provided on the input side of the arithmetic unit, or when the destination latch register is incorporated within the arithmetic unit, and a circuit setup for avoiding any contention for a register that may develop when executing a current instruction and the next instruction is provided in accordance with an added microprogram.
摘要:
An input/output control device stores variable-length data in a memory device at a high storage efficiency and without reducing the speed of data processing. The data stored in a memory are read out in the form of data of a fixed word length and then processed, the data having been processed are stored in another memory in the form of data of the fixed word length. The data stored in another memory are subjected to data organization to be outputted in the form of data of a given word length. Each of the memories is divided into a plurality of regions, and each region stores therein data of the same word length, respectively.