公开(公告)号：US20120211163A1

公开(公告)日：2012-08-23

申请号：US13457082

申请日：2012-04-26

申请人： Hiroyuki KOBAYASHI ,  Masaru Izawa

发明人： Hiroyuki KOBAYASHI ,  Masaru Izawa

IPC分类号： C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/335 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68785 ,  Y10S156/915

摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

摘要翻译： 灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于 客观物品的直径。

公开(公告)号：US08142567B2

公开(公告)日：2012-03-27

申请号：US12392127

申请日：2009-02-25

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412

摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.

摘要翻译： 真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的构件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜 涡轮分子泵的旋转叶片在构件的外周上的方向。

公开(公告)号：US20110132541A1

公开(公告)日：2011-06-09

申请号：US12696552

申请日：2010-01-29

申请人： Takumi TANDOU ,  Masaru Izawa

发明人： Takumi TANDOU ,  Masaru Izawa

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A wafer stage includes a first evaporator where a refrigerant circulates. The first evaporator makes up a cooling cycle with a compressor, first condenser, expansion valve, second evaporator, refrigerant thermometer, and refrigerant flowmeter. The first condenser is supplied with a heat exchange medium. The temperature of a coolant supplied to the second evaporator is measured by an inlet refrigerant thermometer and outlet refrigerant thermometer, while the flow rate of the coolant is monitored and adjusted by a flow-rate adjuster. The temperature difference in the coolant between being at the inlet and at the outlet and flow rate can be measured. Upon complete evaporation of the refrigerant in the second evaporator, the dryness of the refrigerant discharged from the wafer stage is calculated from the amount of heat absorbed from (exchanged with) the coolant, the circulation amount of the refrigerant and the refrigerant temperature to control the rotational speed of the compressor.

摘要翻译： 晶片台包括制冷剂循环的第一蒸发器。 第一蒸发器与压缩机，第一冷凝器，膨胀阀，第二蒸发器，制冷剂温度计和制冷剂流量计构成冷却循环。 第一冷凝器配有热交换介质。 通过入口制冷剂温度计和出口制冷剂温度计测量供应到第二蒸发器的冷却剂的温度，同时通过流速调节器监测和调节冷却剂的流量。 可以测量在入口和出口处的冷却剂的温度差和流量。 在第二蒸发器中制冷剂完全蒸发时，从冷却剂的吸收热量，制冷剂的循环量和制冷剂的温度来计算从晶片台排出的制冷剂的干度，以控制 压缩机的转速。

公开(公告)号：US20100326094A1

公开(公告)日：2010-12-30

申请号：US12538986

申请日：2009-08-11

申请人： Takumi TANDOU ,  Masaru Izawa

发明人： Takumi TANDOU ,  Masaru Izawa

IPC分类号： F25B45/00 ,  H01L21/3065 ,  F25B19/00

CPC分类号： H01J37/32091 ,  F25B45/00 ,  F25B2500/06 ,  H01J2237/2001

摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.

摘要翻译： 在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。 在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护 。 在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂 再次。

公开(公告)号：US07723235B2

公开(公告)日：2010-05-25

申请号：US11571853

申请日：2005-06-10

申请人： Masaru Kurihara ,  Masaru Izawa

发明人： Masaru Kurihara ,  Masaru Izawa

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/28035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76885 ,  H01L29/6659 ,  H01L29/7833

摘要： After a polycrystalline silicon film (5) is formed on a semiconductor substrate via an insulating film for a gate insulating film (step S1), an organic antireflection film (21) is formed on the polycrystalline silicon film (5) (step S2), and a resist pattern (22) is formed on the antireflection film (21) (step S3). Then, a passivation film (23) is deposited on the antireflection film (21) so as to cover the resist pattern (22) by plasma using fluorocarbon gas while a bias voltage is being applied to the semiconductor substrate (step S4). Then, the passivation film (23) and the antireflection film (21) are etched by plasma using gas containing oxygen gas (step S5). Thereafter, the polycrystalline silicon film (5) is etched using the resist pattern (22) with reduced line edge roughness as an etching mask to form a gate electrode (step S6).

摘要翻译： 在通过栅极绝缘膜用绝缘膜在半导体基板上形成多晶硅膜（5）（步骤S1）之后，在多晶硅膜（5）上形成有机防反射膜（21）（步骤S2） 并且在防反射膜（21）上形成抗蚀剂图案（22）（步骤S3）。 然后，在防反射膜（21）上沉积钝化膜（23），以便在对半导体衬底施加偏置电压的同时使用碳氟化合物气体通过等离子体覆盖抗蚀剂图案（步骤S4）。 然后，使用含氧气体的等离子体蚀刻钝化膜（23）和防反射膜（21）（步骤S5）。 此后，使用具有减小的线边缘粗糙度的抗蚀剂图案（22）蚀刻多晶硅膜（5）作为蚀刻掩模以形成栅电极（步骤S6）。

公开(公告)号：US20100025369A1

公开(公告)日：2010-02-04

申请号：US12202642

申请日：2008-09-02

申请人： Nobuyuki NEGISHI ,  Masaru Izawa ,  Kenji Maeda

发明人： Nobuyuki NEGISHI ,  Masaru Izawa ,  Kenji Maeda

IPC分类号： G01L11/02

CPC分类号： H01J37/32642 ,  H01J37/32935 ,  H01J37/3299

摘要： To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber 1, workpiece mounting means 5, high frequency electric power introducing means 4 and radio-frequency bias electric power introducing means 7 and processes a surface of a workpiece 6 using a plasma that is converted from a gas introduced into the vacuum chamber 1 by the action of a high frequency electric power introduced by the high frequency electric power introducing means 4. The plasma processing apparatus further includes an annular member 11 surrounding the workpiece 6 mounted on the workpiece mounting means 5, and a pair of tubes having an aspect ratio of 3 or higher and disposed on a side wall of the vacuum chamber 1 to face each other. Each tube is vacuum-sealed at a tip end thereof with a glass material. One of the tubes has a light source 15 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material, and the other tube has light receiving means 16 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material. The light receiving means 16 receives light passing across the surface of the annular member 11.

摘要翻译： 监视在晶片处理期间消耗的聚焦环的厚度。 等离子体处理装置包括真空室1，工件安装装置5，高频电力引入装置4和射频偏置电力引入装置7，并使用从引入的气体转换的等离子体处理工件6的表面 通过高频电力引入装置4引入的高频电力进入真空室1.等离子体处理装置还包括环绕安装在工件安装装置5上的工件6的环形构件11和一对 的长径比为3或更高并且设置在真空室1的侧壁上以彼此面对的管。 每个管在其末端用玻璃材料进行真空密封。 其中一个管具有面向玻璃材料的气氛侧的真空室的内部设置的光源15，另一个管具有光接收装置16，该接收装置16面对真空室的大气侧的内部 玻璃材料。 光接收装置16接收穿过环形构件11的表面的光。

公开(公告)号：US20090181545A1

公开(公告)日：2009-07-16

申请号：US12400697

申请日：2009-03-09

申请人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

发明人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

IPC分类号： H01L21/3065

CPC分类号： H01J37/32935 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： A resist damage free dry-etching process is proposed. A time duration defined until bias electric power is applied is controlled according to a plasma ignition detection signal. Wafer back-side gas pressure for a certain constant time after starting of an etching process operation is set to be lower than that as to a main etching condition. Within the time duration defined after starting of the etching process operation up to a certain constant time, CxFy gas having a lower C/F ratio than that of the main etching condition is employed, or a flow rate of the CxFy gas is lowered. The above-described parameter values are controlled every wafer according to an amount of radicals contained in the plasma being monitored. A unit for preheating a wafer is installed in a wafer transporting system.

摘要翻译： 提出了一种抗蚀损坏自由干蚀刻工艺。 根据等离子体点火检测信号控制施加偏压电力之前定义的持续时间。 在开始蚀刻处理操作之后，将一定时间的晶片后侧气体压力设定为低于主蚀刻条件。 在蚀刻处理操作开始定义的持续时间之前，采用比主蚀刻条件低C / F比的CxFy气体，或者降低CxFy气体的流量。 根据被监测的等离子体中所含的自由基的量，每个晶片控制上述参数值。 用于预热晶片的单元安装在晶片传送系统中。

公开(公告)号：US20090060702A1

公开(公告)日：2009-03-05

申请号：US12035780

申请日：2008-02-22

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa

IPC分类号： H01L21/673

CPC分类号： H01L21/67748 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67196

摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.

摘要翻译： 在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置， 处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为 供给到处理室的气体是供给至运送室的气体的流量的两倍以上。

公开(公告)号：US20080149590A1

公开(公告)日：2008-06-26

申请号：US11942849

申请日：2007-11-20

申请人： Kenji Maeda ,  Makoto Satake ,  Masaru Izawa

发明人： Kenji Maeda ,  Makoto Satake ,  Masaru Izawa

IPC分类号： C23F1/04 ,  C23F1/08

CPC分类号： H01L21/67069 ,  B82Y10/00 ,  C03C15/00 ,  G11B5/743 ,  G11B5/82 ,  G11B5/8404 ,  G11B5/855 ,  H01J2237/20 ,  H01L21/6875 ,  H01L21/68771 ,  H01L21/68785

摘要： A substrate holder that forms a concavo-convex pattern on recording layers of both of front and back sides of a magnetic recording media is provided. The substrate holder includes an insulator member having a concave portion that holds the etching substrate and a through-hole formed just below the concave portion, and a conductive member having a convex portion that is engaged with the through-hole. A gap is defined between a front side of the convex portion and the bottom surface of the substrate in a state where the etching substrate is mounted on the concave portion, and a thickness of the gap is equal to or higher than 0.5 mm and equal to or lower than 1 mm, and a thickness of the insulator member is equal to or higher than 1 mm and equal to or lower than 15 mm.

摘要翻译： 提供了一种在磁记录介质的前后两面的记录层上形成凹凸图案的基板保持件。 基板保持器包括绝缘体构件，其具有保持蚀刻基板的凹部和形成在凹部下方的通孔，以及具有与通孔配合的凸部的导电构件。 在蚀刻基板安装在凹部上的状态下，在凸部的前侧和基板的底面之间限定间隙，并且间隙的厚度等于或大于等于或等于0.5mm 或小于1mm，并且绝缘体构件的厚度等于或大于1mm且等于或小于15mm。

公开(公告)号：US20080023448A1

公开(公告)日：2008-01-31

申请号：US11512118

申请日：2006-08-30

申请人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Seiichiro Kanno ,  Masaru Izawa

发明人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Seiichiro Kanno ,  Masaru Izawa

IPC分类号： B23K9/00

CPC分类号： H01L21/67248 ,  H01J2237/2001 ,  H01L21/67109

摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.

摘要翻译： 提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。 等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。