公开(公告)号：US20060034118A1

公开(公告)日：2006-02-16

申请号：US11202318

申请日：2005-08-12

申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

IPC分类号： G11C11/00

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

摘要： The magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer which is provided between the second ferromagnetic layer and the third ferromagnetic layer and which transmits a change of magnetization direction of the third ferromagnetic layer to the second ferromagnetic layer; and a tunnel barrier layer provided between the first ferromagnetic layer and the second ferromagnetic layer.

摘要翻译： 磁阻效应元件包括：用作磁化固定层的第一铁磁层; 包含设置在第一铁磁层的一侧上的第二铁磁层的无磁化层，第三铁磁层，其形成在第二铁磁层与第一铁磁层相反的一侧上，并具有面积大于 第二铁磁层的磁化方向可由外部磁场变化的中间层，以及设置在第二铁磁层与第三铁磁层之间并将第三铁磁性层的磁化方向的变化向第 第二铁磁层; 以及设置在第一铁磁层和第二铁磁层之间的隧道势垒层。

公开(公告)号：US20050170218A1

公开(公告)日：2005-08-04

申请号：US11069991

申请日：2005-03-03

申请人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama

发明人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  B32B1/00 ,  G11B5/64

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.

摘要翻译： 隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿 通过绝缘膜。 磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。

公开(公告)号：US20050020011A1

公开(公告)日：2005-01-27

申请号：US10702574

申请日：2003-11-07

申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

IPC分类号： H01L27/105 ,  C23F4/00 ,  G11C11/00 ,  G11C11/02 ,  H01F10/32 ,  H01F41/30 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/119 ,  H01L43/08 ,  H01L43/12

CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

公开(公告)号：US06685052B1

公开(公告)日：2004-02-03

申请号：US09684676

申请日：2000-10-11

申请人： Akira Nemoto ,  Shigeki Takahashi ,  Nihei Kaishita ,  Mitsuhiro Namura

发明人： Akira Nemoto ,  Shigeki Takahashi ,  Nihei Kaishita ,  Mitsuhiro Namura

IPC分类号： B23Q712

CPC分类号： B65G47/1428 ,  H05K13/022

摘要： A feed lever is lowered, correspondingly to the load input of a chip mounter. A rotary drum is intermittently moved through a conversion mechanism, intermittently in one direction. Chip components placed in a component accommodation chamber are aligned and discharged. When a rotation resistance larger than a predetermined value acts, a belt is slid, and breaking of a chip component is prevented.

摘要翻译： 相应于芯片安装机的负载输入，进给杆下降。 旋转滚筒在一个方向间歇地间歇地移动通过转换机构。 放置在部件容纳室中的芯片部件对齐并排出。 当大于预定值的旋转阻力作用时，皮带滑动，并且防止了切屑部件的断裂。

公开(公告)号：US06605836B2

公开(公告)日：2003-08-12

申请号：US10097571

申请日：2002-03-15

申请人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

发明人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

IPC分类号： H01L31119

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/398 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01L43/08 ,  Y10S428/90 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49052 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/32

摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.

摘要翻译： 用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。 磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。 端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。 平面形状可以具有其磁畴稳定并且开关磁场减小的S形。 磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

公开(公告)号：US06603173B1

公开(公告)日：2003-08-05

申请号：US09391236

申请日：1999-09-07

申请人： Yoshifumi Okabe ,  Yoshihiko Ozeki ,  Shigeki Takahashi ,  Norihito Tokura

发明人： Yoshifumi Okabe ,  Yoshihiko Ozeki ,  Shigeki Takahashi ,  Norihito Tokura

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/4236

摘要： A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses a p-type base layer at a sidewall of a rectangular U-groove as a channel portion. Each of the p-type base layer of each unit cell is connected each others Accordingly, it can restrain an impurity concentration of a corner portion (a portion positioned at a corner) of the rectangular p-type base layer from being decreased. Therefore, it can reduce the difference in distance from the end portion of the p-type base layer to the end portion of the depletion layer. As a result, it can improve the surge withstand voltage when a surge voltage is input from an inductance load L.

摘要翻译： 一种垂直功率MOSFET，其可以提高抗电压耐受电压和抵抗来自电感负载L的浪涌电压的浪涌耐受电压。垂直功率MOSFET具有多个单元电池。 单位电池由在矩形U形槽的侧壁处使用p型基底层作为沟道部分的MOSFET形成。 每个单电池的p型基极层彼此连接。因此，能够抑制矩形p型基极层的角部（位于角部的部分）的杂质浓度降低。 因此，可以减少与p型基底层的端部到耗尽层的端部的距离的差异。 因此，当从电感负载L输入浪涌电压时，可以提高浪涌耐受电压。

公开(公告)号：US06513644B1

公开(公告)日：2003-02-04

申请号：US09109407

申请日：1998-07-02

申请人： Shigeki Takahashi ,  Nihei Kaishita

发明人： Shigeki Takahashi ,  Nihei Kaishita

IPC分类号： B65G4714

CPC分类号： H05K13/003

摘要： A subject part-aligning apparatus has a simple structure and causes less damage to chip parts, and operates well even if a chip discharge passage thereof is clogged or overflows with the chip parts. The apparatus has a part-holding chamber for accommodating a number of chip parts. An arc-shaped chute groove is formed in the inner surface of the bottom of the part-holding chamber to orient the chip parts in a given direction and to slidably guide the chips. A gate port is formed at the lower end of the chute groove to permit the chip parts sliding downward in a given orientation along the chute groove to pass in series (e.g., one by one). The discharge passage is formed to be tangential to the chute groove to align the passed chip parts in a line and to discharge the chip parts. A rotary impeller having blades is mounted in the part-holding chamber. The blades urge any chip part halted in an abnormal orientation in the gate port toward a direction opposite to the direction in which the chips are discharged.

摘要翻译： 对象零件调整装置具有简单的结构，对芯片部件造成的损坏较小，即使其芯片排出通道堵塞或芯片部件溢出，也能够良好地运行。 该装置具有容纳多个芯片部件的部分保持室。 在所述部件保持室的底部的内表面中形成弧形斜槽，以沿着给定方向定位所述芯片部件，并且可滑动地引导所述芯片。 门槽口形成在斜槽槽的下端，以允许芯片部件沿着斜槽沿给定方向向下滑动以串联（例如一个接一个地）通过。 排出通道形成为与滑槽相切，以使经过的芯片部分在一条线上对准并排出芯片部件。 具有叶片的旋转叶轮安装在部分保持室中。 叶片促使任何芯片部分在门口中朝向与芯片排出方向相反的方向以异常方向停止。

公开(公告)号：US06380841B2

公开(公告)日：2002-04-30

申请号：US09754427

申请日：2001-01-04

申请人： Fumitoshi Masuda ,  Shigeki Takahashi ,  Toru Ogata ,  Tomohisa Ogawa ,  Minoru Yamaguchi ,  Yutaka Kitamura

发明人： Fumitoshi Masuda ,  Shigeki Takahashi ,  Toru Ogata ,  Tomohisa Ogawa ,  Minoru Yamaguchi ,  Yutaka Kitamura

IPC分类号： H01C1032

CPC分类号： H01C10/32

摘要： A variable resistor is constructed to reliably seal the space between a rotor and a substrate without insert-molding the substrate into a case, and to be produced at a very low cost. This variable resistor includes a hollow square-prism shaped case which is open at the top and the bottom, a substrate which is fitted into the lower opening of the case, and on the top surface of which a collector electrode and an arcuate resistor are provided, a rotor rotatably fitted into the upper opening of the case, a slider mounted on the bottom surface of the rotor and making sliding contact with the collector electrode and the resistor, an annular packing member disposed between the rotor and the substrate for sealing the space therebetween, terminals mounted on the substrate and electrically connected to the resistor and the collector electrode, and a metallic cover.

公开(公告)号：US06318592B1

公开(公告)日：2001-11-20

申请号：US09705841

申请日：2000-11-06

申请人： Shigeki Takahashi ,  Nihei Kaishita ,  Akira Nemoto

发明人： Shigeki Takahashi ,  Nihei Kaishita ,  Akira Nemoto

IPC分类号： B65G5900

CPC分类号： B65G47/1407 ,  B65G25/06 ,  B65G27/12 ,  H05K13/028

摘要： A component carrying device has a simple constitution, and is capable of lining up components and carrying them in one direction with high reliability. The device comprises a guide groove for lining up components into one line and guiding them; a carrying member, provided on the bottom face of the guide groove, which can move forward and backward along the direction of the groove; and driving means, for driving the carrying member forward and backward at a higher speed when moving backward than when moving forward. The speed of the carrying member when moving forward is a speed at which a predetermined sustained frictional force acts between the carrying member and the components, which are mounted on the top face of the carrying member; and the speed of the carrying member when moving backward is a speed at which the frictional force between the carrying member and the components mounted on its top face, substantially breaks, so that the components are carried forward by the difference in frictional force.

公开(公告)号：US06318541B1

公开(公告)日：2001-11-20

申请号：US09287635

申请日：1999-04-07

申请人： Shigeki Takahashi ,  Nihei Kaishita ,  Akira Nemoto

发明人： Shigeki Takahashi ,  Nihei Kaishita ,  Akira Nemoto

IPC分类号： B65G2504

CPC分类号： B65G47/1407 ,  B65G25/06 ,  B65G27/12 ,  H05K13/028

摘要： A component carrying device has a simple constitution, and is capable of lining up components and carrying them in one direction with high reliability. The device comprises a guide groove for lining up components into one line and guiding them; a carrying member, provided on the bottom face of the guide groove, which can move forward and backward along the direction of the groove; and driving means, for driving the carrying member forward and backward at a higher speed when moving backward than when moving forward. The speed of the carrying member when moving forward is a speed at which a predetermined sustained frictional force acts between the carrying member and the components, which are mounted on the top face of the carrying member; and the speed of the carrying member when moving backward is a speed at which the frictional force between the carrying member and the components mounted on its top face, substantially breaks, so that the components are carried forward by the difference in frictional force.

摘要翻译： 部件承载装置具有简单的结构，并且能够以高可靠性在一个方向上排列组件并携带它们。 该装置包括用于将部件排列成一条线并引导它们的引导槽; 一个承载构件，设置在引导槽的底面上，该承载构件能够沿着槽的方向前后移动; 以及驱动装置，用于当向后移动时以比向前移动时以更高的速度向前和向后驱动承载构件。 承载构件向前移动的速度是在承载构件和安装在承载构件的顶面上的构件之间作用预定的持续摩擦力的速度; 并且当向后移动时承载构件的速度是承载构件和安装在其顶面上的部件之间的摩擦力基本上断裂的速度，使得通过摩擦力的差异将部件向前延伸。