利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

176 条记录 (耗时 0.031 秒)

    High holding voltage dual direction ESD clamp
    52.
    发明授权
    High holding voltage dual direction ESD clamp 有权
    高保持电压双向ESD钳位

    公开(公告)号：US07639464B1

    公开(公告)日：2009-12-29

    申请号：US11376492

    申请日：2006-03-15

    申请人： Vladislav Vashchenko ,  Peter J. Hopper

    发明人： Vladislav Vashchenko ,  Peter J. Hopper

    IPC分类号： H02H9/00 ,  H02H3/20

    CPC分类号： H01L27/0266

    摘要： In a dual direction ESD protection structure, first and second NMOS devices are serially connected back-to-back by connecting their drains or their sources using a common floating interconnect, while ensuring that the devices remain isolated from each other.

    摘要翻译： 在双向ESD保护结构中，第一和第二NMOS器件通过使用公共浮动互连连接它们的漏极或其源极而被背对背地串联连接，同时确保器件保持彼此隔离。

    Method of Forming a SiGe DIAC ESD Protection Structure
    54.
    发明申请
    Method of Forming a SiGe DIAC ESD Protection Structure 有权
    形成SiGe DIAC ESD保护结构的方法

    公开(公告)号：US20090162978A1

    公开(公告)日：2009-06-25

    申请号：US12395506

    申请日：2009-02-27

    申请人： Vladislav Vashchenko ,  Peter J. Hopper

    发明人： Vladislav Vashchenko ,  Peter J. Hopper

    IPC分类号： H01L21/332

    CPC分类号： H01L27/0259

    摘要： A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors.

    摘要翻译： 用于交流（DIAC）静电放电（ESD）保护电路的二极管形成在利用非常薄的集电极区域的硅锗（SiGe）合金双极晶体管（HBT）工艺中。 通过利用SiGe晶体管的基极结构和发射极结构，提供一对待保护焊盘的ESD保护。

    Dual direction ESD clamp based on snapback NMOS cell with embedded SCR
    56.
    发明授权
    Dual direction ESD clamp based on snapback NMOS cell with embedded SCR 有权
    基于具有嵌入式SCR的快速恢复NMOS单元的双向ESD钳位

    公开(公告)号：US07394133B1

    公开(公告)日：2008-07-01

    申请号：US11216774

    申请日：2005-08-31

    申请人： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

    发明人： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

    IPC分类号： H01L29/72

    CPC分类号： H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/87

    摘要： In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.

    摘要翻译： 在ESD保护结构中，通过在NMOS器件周围形成n阱隔离环来提供双向ESD保护，使得形成NMOS漏极的p阱通过n阱与下面的p衬底隔离 隔离环。 通过形成n阱隔离环，提供了用于反向ESD保护的嵌入式SCR的p-n-p-n结构。 调整n阱隔离环的宽度及其与NMOS漏极的间隔，以提供所需的SCR参数。

    Imaging cell that has a long integration period and method of operating the imaging cell
    57.
    发明授权
    Imaging cell that has a long integration period and method of operating the imaging cell 有权
    成像细胞具有长的积分期和操作成像细胞的方法

    公开(公告)号：US07218555B2

    公开(公告)日：2007-05-15

    申请号：US11242094

    申请日：2005-10-03

    申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

    发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

    IPC分类号： G11C11/34 ,  H01L29/788

    CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

    摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

    摘要翻译： 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

    High-speed photon detector and method of forming the detector
    58.
    发明授权
    High-speed photon detector and method of forming the detector 有权
    高速光子探测器及形成探测器的方法

    公开(公告)号：US07057174B1

    公开(公告)日：2006-06-06

    申请号：US10355904

    申请日：2003-01-30

    申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

    发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

    IPC分类号： H01L31/00

    CPC分类号： H01L31/08

    摘要： A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed adjacent to the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in the magnetic flux.

    摘要翻译： 能够检测千兆赫兹光信号的光子检测器利用与电感线圈相邻形成的光子材料层。 当脉冲光源被施加到光子材料层时，光子材料产生改变电感器的磁通量的涡流。 然后可以通过检测磁通量的变化来检测信号。