摘要:
An apparatus for photoelectrically detecting the position of each of the edges of a line having the opposite edges thereof formed substantially parallel to each other on an a substrate thereby to measure the width of the line, comprises a source of coherent light, means for condensing the coherent light into a tiny light spot which illuminates the line, means for imparting to the tiny light spot a minute oscillation having an amplitude less than the width of the line, means for providing relative movement of the tiny light spot and the line so that diffracted light may be created at each of the edges of the line, a first photoelectric conversion element for receiving chiefly the diffracted light created at one of the edges of the line, a second photoelectric conversion element for receiving chiefly the diffracted light created at the other edge of the line, and a circuit for producing position signals corresponding to the edges of the line from the output signals from the first and second photoelectric conversion elements.
摘要:
An exposure apparatus includes an optical element via which a patterned beam is projected onto a substrate through exposure liquid filled in a space between the optical element and the substrate. The apparatus also includes a member having a flow passage in which exposure liquid flows, the flow passage being in fluidic communication with the space. The apparatus also includes a cleaning system which cleans the member.
摘要:
A cleaning tool is loaded onto an exposure apparatus, which exposes a substrate with exposure light, and cleans a member inside the exposure apparatus. The cleaning tool comprises: a base member; and a cleaning member that is disposed on the base member and permeated with a cleaning liquid.
摘要:
An exposure apparatus includes an optical element via which a patterned beam is projected onto a substrate through exposure liquid filled in a space between the optical element and the substrate. The apparatus also includes a member having a surface and movable to a position at which the surface of the member faces the optical element. The apparatus also includes a cleaning system which cleans the surface of the member.
摘要:
There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.
摘要:
There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.
摘要:
A lens cleaning module is provided for a lithography system having an exposure apparatus including an objective lens. The system includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module coupling with the lithography system is provided for cleaning the objective lens in a non-manual cleaning process.
摘要:
A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base. The apparatus uses a wide bandwidth light source for the exposure light source that produces exposure light and non-exposure light having wavelengths different from those in the exposure light, and optical adjustments for optical components in at least a portion of the illumination optics are performed by using non-exposure light
摘要:
A light exposure apparatus used for manufacturing semiconductors, liquid crystal display elements or the like is provided with an illuminating optical system for illuminating a mask formed with a pattern with pulse light from a light source, a mask stage for loading the mask, a substrate stage for loading the photo-sensitive substrate, and a driving system for synchronously scanning the mask stage and a substrate stage. The light exposure apparatus further includes a stop having two edges for limiting the shape of an illuminating area on the mask to a predetermined shape due to an illuminating optical system, an edge position adjusting portion for adjusting a position of one or both edges with respect to a scanning direction, an exposure light energy detecting unit for detecting energy per pulse, a calculating portion for calculating, based on information from the exposure light energy detecting unit, accumulating amounts of exposure light per each of accumulated exposure light amount calculating zones obtained by dividing the illuminating area at predetermined intervals in the scanning direction of the photo-sensitive substrate, and a control portion for controlling the edge position adjusting portion in response to a difference between a predetermined accumulated amount of exposure light and a calculated amount of exposure light.
摘要:
A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.