Apparatus for measuring the line width of a pattern
    51.
    发明授权
    Apparatus for measuring the line width of a pattern 失效
    用于测量图案的线宽的装置

    公开(公告)号:US4112309A

    公开(公告)日:1978-09-05

    申请号:US740495

    申请日:1976-11-10

    CPC分类号: G01B11/046

    摘要: An apparatus for photoelectrically detecting the position of each of the edges of a line having the opposite edges thereof formed substantially parallel to each other on an a substrate thereby to measure the width of the line, comprises a source of coherent light, means for condensing the coherent light into a tiny light spot which illuminates the line, means for imparting to the tiny light spot a minute oscillation having an amplitude less than the width of the line, means for providing relative movement of the tiny light spot and the line so that diffracted light may be created at each of the edges of the line, a first photoelectric conversion element for receiving chiefly the diffracted light created at one of the edges of the line, a second photoelectric conversion element for receiving chiefly the diffracted light created at the other edge of the line, and a circuit for producing position signals corresponding to the edges of the line from the output signals from the first and second photoelectric conversion elements.

    摘要翻译: 一种用于光电检测具有其相对边缘的线的每个边缘的位置在每个基板上基本上彼此平行的位置的装置,从而测量线的宽度,包括相干光源,用于将 将相干光照射到照亮线的微小光点,用于赋予微小光点具有小于线宽度的微小振荡的装置,用于提供微小光点和线的相对运动的衍射装置 可以在线的每个边缘处产生光,第一光电转换元件,主要用于接收在线的一个边缘处产生的衍射光;第二光电转换元件,主要用于主要在另一边缘处产生的衍射光 以及用于从来自第一和第二秒的输出信号产生对应于线的边缘的位置信号的电路 ond光电转换元件。

    Apparatus and method for pattern exposure and method for adjusting the apparatus
    58.
    发明授权
    Apparatus and method for pattern exposure and method for adjusting the apparatus 有权
    用于图案曝光的装置和方法以及用于调节装置的方法

    公开(公告)号:US06727980B2

    公开(公告)日:2004-04-27

    申请号:US09846304

    申请日:2001-05-02

    IPC分类号: G03B2752

    CPC分类号: G03F7/706 G03F7/70258

    摘要: A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base. The apparatus uses a wide bandwidth light source for the exposure light source that produces exposure light and non-exposure light having wavelengths different from those in the exposure light, and optical adjustments for optical components in at least a portion of the illumination optics are performed by using non-exposure light

    摘要翻译: 用于进行曝光装置的光学调节的方法是基于具有用于产生用于曝光的照明光的光源的曝光装置和用于从曝光光源产生的照明光照射掩模以照射掩模的照明光学器件, 图案在基底上。 该装置使用用于产生具有与曝光光中的波长不同的波长的曝光光和非曝光光的曝光光源的宽带宽光源,并且在照明光学装置的至少一部分中的光学部件的光学调整由 使用非曝光灯

    Slit-scanning type light exposure apparatus
    59.
    发明授权
    Slit-scanning type light exposure apparatus 失效
    狭缝扫描型曝光装置

    公开(公告)号:US5663784A

    公开(公告)日:1997-09-02

    申请号:US409935

    申请日:1995-03-23

    申请人: Akikazu Tanimoto

    发明人: Akikazu Tanimoto

    摘要: A light exposure apparatus used for manufacturing semiconductors, liquid crystal display elements or the like is provided with an illuminating optical system for illuminating a mask formed with a pattern with pulse light from a light source, a mask stage for loading the mask, a substrate stage for loading the photo-sensitive substrate, and a driving system for synchronously scanning the mask stage and a substrate stage. The light exposure apparatus further includes a stop having two edges for limiting the shape of an illuminating area on the mask to a predetermined shape due to an illuminating optical system, an edge position adjusting portion for adjusting a position of one or both edges with respect to a scanning direction, an exposure light energy detecting unit for detecting energy per pulse, a calculating portion for calculating, based on information from the exposure light energy detecting unit, accumulating amounts of exposure light per each of accumulated exposure light amount calculating zones obtained by dividing the illuminating area at predetermined intervals in the scanning direction of the photo-sensitive substrate, and a control portion for controlling the edge position adjusting portion in response to a difference between a predetermined accumulated amount of exposure light and a calculated amount of exposure light.

    摘要翻译: 用于制造半导体,液晶显示元件等的曝光装置设置有用于照射由来自光源的脉冲光形成的图案的掩模的照明光学系统,用于加载掩模的掩模台,衬底台 用于加载感光基板,以及用于同步扫描掩模台和基板台的驱动系统。 曝光装置还包括具有用于将掩模上的照明区域的形状限制为由照明光学系统形成的预定形状的两个边缘的挡块,用于调整一个或两个边缘相对于 扫描方向,用于检测每脉冲能量的曝光光能量检测单元,计算部分,用于根据来自曝光光能检测单元的信息计算每个累积曝光光量计算区域的曝光量的积累量, 在感光基板的扫描方向上的预定间隔的照明区域,以及响应于预定累计曝光量和计算曝光量之间的差异来控制边缘位置调整部分的控制部分。

    Apparatus for removing a thin film layer
    60.
    发明授权
    Apparatus for removing a thin film layer 失效
    用于去除薄膜层的装置

    公开(公告)号:US5597590A

    公开(公告)日:1997-01-28

    申请号:US563349

    申请日:1995-11-28

    IPC分类号: B23K26/08 G03F9/00

    CPC分类号: B23K26/0823 G03F9/70

    摘要: A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

    摘要翻译: 一种方法和装置,其中薄膜层,例如覆盖至少选定的图案的抗蚀剂的抗蚀剂,例如晶片的表面上,例如晶片,相对于每个图案在预定位置处从有限的局部部分移除, 作为响应于能量束的照射的图案的对准标记部分。 基板位于转台上,并且在转台上检测图案的选定部分的位置。 根据所选择的部分的检测位置和图案的设计坐标位置信息,需要去除薄膜层的局部部分的位置通过基于转弯旋转中心的极坐标系来确定 使得根据确定的极坐标值,能量束被照射在局部部分的薄膜层上。