公开(公告)号：US20090288602A1

公开(公告)日：2009-11-26

申请号：US12087071

申请日：2007-03-20

申请人： Kouji Satake ,  Satoshi Sakai ,  Atsuhiro Iyomasa ,  Toshiya Watanabe ,  Hideo Yamakoshi ,  Toshiaki Monaka

发明人： Kouji Satake ,  Satoshi Sakai ,  Atsuhiro Iyomasa ,  Toshiya Watanabe ,  Hideo Yamakoshi ,  Toshiaki Monaka

IPC分类号： C23C16/54

CPC分类号： H01J37/32541 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/509 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/466

摘要： An electrode and a vacuum processing apparatus are provided that are capable of improving the film deposition rate and the uniformity of the distribution of the deposited film. The electrode includes a plurality of electrodes (17A, 17B) extending from positions arranged at a predetermined interval along a surface of a substrate to be processed (3). Buffer chambers (25) each extend along and between two of the plurality of electrodes (17A, 17B). A plurality of first gas injection holes (27) are arranged in the direction in which the electrodes (17A, 17B) extend and which supply a reactant gas into the buffer chamber (25). A second gas injection hole (23) has a slit form extending in the direction in which the electrodes (17A, 17B) extend, and which supplies the reactant gas from the buffer chamber (25) toward the substrate to be processed (3).

摘要翻译： 提供了能够提高成膜速度和沉积膜的分布均匀性的电极和真空处理装置。 电极包括沿着待处理基板（3）的表面以预定间隔布置的位置延伸的多个电极（17A，17B）。 缓冲室（25）各自沿着多个电极（17A，17B）中的两个延伸。 多个第一气体喷射孔（27）沿电极（17A，17B）延伸的方向排列，并将反应气体供应到缓冲室（25）中。 第二气体注入孔（23）具有沿电极（17A，17B）延伸的方向延伸的狭缝形状，并且将缓冲室（25）的反应气体朝向待处理基板（3）供给。

公开(公告)号：US20090027300A1

公开(公告)日：2009-01-29

申请号：US11816393

申请日：2006-02-15

申请人： Toshio Kudo ,  Kazuyuki Kashihara ,  Katsunori Hosotani ,  Satoshi Sakai

发明人： Toshio Kudo ,  Kazuyuki Kashihara ,  Katsunori Hosotani ,  Satoshi Sakai

IPC分类号： H01Q15/14

CPC分类号： H05K9/0003 ,  H01Q15/0013 ,  H05K9/0005 ,  H05K9/0094

摘要： An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

摘要翻译： 电磁屏幕（1）包括多个天线（4），每个天线反射具有特定频率的电磁波。 多个天线（4）被布置成构成图案。 每个天线（4）具有三个段状的第一元件部分（4a）和三个段状的第二元件部分（4b）。 三个第一元件部分（4a）从天线（4）的中心径向延伸大致相同的长度，使得三个第一元件部分（4a）中的任何两个彼此形成120°的角度。 每个第二元件部分（4b）连接到第一元件部分（4a）中对应的一个的外边缘。

公开(公告)号：US07440206B2

公开(公告)日：2008-10-21

申请号：US11682800

申请日：2007-03-06

申请人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： G02B7/00

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： An optical properties restoration apparatus improves reliability and longevity of optical properties of an optical system, lying upon a vacuum boundary, by preventing, suppressing, or improving degradation of optical properties. The apparatus includes creating the near vacuum zone to excite an oxidation reaction of carbon, generating a flow of an oxygen atom-containing gas such as water gas or oxide gas in the near vacuum zone, and supplying active energy in the near vacuum zone to cause a carbon oxidation reaction between the oxygen atom-containing gas and the carbon. The near vacuum zone faces the lighting surfaces of the optical system and a lower limit value for a partial pressure of the gases containing oxygen atoms that is supplied to the near vacuum zone is set to a level over a speed of the carbon buildup that deposits on the lighting surfaces of the optical system.

摘要翻译： 光学性能恢复装置通过防止，抑制或改善光学性能的劣化来提高位于真空边界的光学系统的光学性质的可靠性和寿命。 该装置包括产生近真空区域以激发碳的氧化反应，在近真空区域中产生含氧原子的气体如水气或氧化物气体的流，并在近真空区域中提供活性能量以引起 含氧原子气体和碳之间的碳氧化反应。 近真空区域面向光学系统的照明表面，并且将供应到近真空区域的含有氧原子的气体的分压的下限值设定为高于沉积在碳沉积速度上的水平 光学系统的照明表面。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20070190744A1

公开(公告)日：2007-08-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

公开(公告)号：US07250376B2

公开(公告)日：2007-07-31

申请号：US11132289

申请日：2005-05-19

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/31

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

摘要翻译： 制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及 在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm或更小的薄氧化膜，其足以确保形成氧化膜的保真度，以及 氧化膜厚度均匀。

公开(公告)号：US07217607B2

公开(公告)日：2007-05-15

申请号：US10968050

申请日：2004-10-20

申请人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

发明人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

IPC分类号： H01L21/336

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28202 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。

公开(公告)号：US07186604B2

公开(公告)日：2007-03-06

申请号：US10519799

申请日：2002-08-15

申请人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

发明人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

IPC分类号： H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/823857

摘要： After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon oxide film 14 in regions for forming gate electrodes. Then, after fabricating silicon films 13n and 13p by using the patterned silicon oxide film 14 as a mask, when removing the silicon oxide film 14, etching is performed under the condition where the etching selectivity of the silicon oxide film 14 to the high dielectric constant insulating film 10 becomes large, thereby leaving the high dielectric constant insulating film 10 also to portions below the end of the gate electrodes (13n, 13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.

摘要翻译： 在半导体衬底1的区域A的表面上形成氧化硅膜9之后，在半导体衬底1上依次沉积高介电常数绝缘膜10，硅膜，氧化硅膜14，并将其图案化 以将氧化硅膜14留在用于形成栅电极的区域中。 然后，通过使用图案化氧化硅膜14作为掩模来制造硅膜13 n和13 p之后，当去除氧化硅膜14时，在氧化硅膜14的蚀刻选择性高的条件下进行蚀刻 介电常数绝缘膜10变大，从而将高介电常数绝缘膜10也留在栅电极（13n，13p）的端部下方的部分。 因此，可以确保其耐受电压并改善MISFET的特性。

公开(公告)号：US07158853B2

公开(公告)日：2007-01-02

申请号：US10971124

申请日：2004-10-25

申请人： Satoshi Sakai ,  Masanobu Ishii

发明人： Satoshi Sakai ,  Masanobu Ishii

IPC分类号： G06F19/00

CPC分类号： G06K9/525 ,  G06K9/4685

摘要： Analysis is performed on sheet metal products to determine characteristics (or feature vectors) of the sheet metal products. Multiple feature vectors can be obtained for each sheet metal product. Exemplary analyses include a first order moment and a second order moment. The characteristics can be compared with characteristics of other sheet metal part shapes to determine how similar the shapes are.

摘要翻译： 对钣金产品进行分析以确定钣金产品的特征（或特征向量）。 可以为每个钣金产品获得多个特征向量。 示例性分析包括第一阶矩和第二阶矩。 这些特性可以与其他钣金零件形状的特性进行比较，以确定形状的相似度。

公开(公告)号：US20060137735A1

公开(公告)日：2006-06-29

申请号：US11296706

申请日：2005-12-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

IPC分类号： H01L31/00

CPC分类号： G02F1/133504 ,  G02F2202/16 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/054 ,  H01L31/056 ,  H01L31/076 ,  H01L2933/0091 ,  Y02E10/52 ,  Y02E10/548

摘要： A light scattering film having the structure which guides electrical signal to a desired position and scatters incident light and the surface of which is substantially flat, and a photoelectric device using the same. The light scattering film includes a medium made of transparent conductive material and a light scatterer embedded in the medium. The light scattering film realizes conductivity and the light-scattering characteristic by single component. It is not necessary to make the texture of a surface with concavity and convexity deliberately to achieve the light-scattering characteristic. Desirably, the surface is substantially flat. When a semiconductor layer is formed on the surface, the defects are suppressed because of the flatness of the surface. The photoelectric device having the light scattering film and the semiconductor device on the surface of the film can achieve high photoelectric conversion efficiency.

摘要翻译： 具有将电信号引导到所需位置并散射入射光并且其表面基本平坦的结构的光散射膜和使用该光散射膜的光电装置。 光散射膜包括由透明导电材料制成的介质和嵌入介质中的光散射体。 光散射膜通过单一成分实现导电性和光散射特性。 不必有意地使具有凹凸的表面的纹理实现光散射特性。 理想地，表面基本上是平的。 当在表面上形成半导体层时，由于表面的平坦度，缺陷被抑制。 具有光散射膜的光电器件和膜表面上的半导体器件可实现高的光电转换效率。