Care areas for improved electron beam defect detection

    公开(公告)号:US10692690B2

    公开(公告)日:2020-06-23

    申请号:US15639311

    申请日:2017-06-30

    摘要: Use of care areas in scanning electron microscopes or other review tools can provide improved sensitivity and throughput. A care area is received at a controller of a scanning electron microscope from, for example, an inspector tool. The inspector tool may be a broad band plasma tool. The care area is applied to a field of view of a scanning electron microscope image to identify at least one area of interest. Defects are detected only within the area of interest using the scanning electron microscope. The care areas can be design-based or some other type of care area. Use of care areas in SEM tools can provide improved sensitivity and throughput.

    Laser sustained plasma light source with forced flow through natural convection

    公开(公告)号:US10690589B2

    公开(公告)日:2020-06-23

    申请号:US16043764

    申请日:2018-07-24

    摘要: A broadband radiation source is disclosed. The system may include a plasma containment vessel configured to receive laser radiation from a pump source to sustain a plasma within gas flowed through the plasma containment vessel. The plasma containment vessel may be further configured to transmit at least a portion of broadband radiation emitted by the plasma. The system may also include a recirculation gas loop fluidically coupled to the plasma containment vessel. The recirculation gas loop may be configured to transport heated gas from an outlet of the plasma containment vessel, and further configured to transport cooled gas to an inlet of the plasma containment vessel.

    On the fly target acquisition
    53.
    发明授权

    公开(公告)号:US10684563B2

    公开(公告)日:2020-06-16

    申请号:US15761830

    申请日:2018-02-19

    摘要: Metrology systems and methods are provided, which derive metrology target position on the wafer and possibly the target focus position during the movement of the wafer on the system's stage. The positioning data is derived before the target arrives its position (on-the-fly), sparing the time required in the prior art for the acquisition stage and increasing the throughput of the systems and methods. The collection channel may be split to provide for an additional moving-imaging channel comprising at least one TDI (time delay and integration) sensor with an associated analysis unit configured to derive wafer surface information, positioning and/or focusing information of the metrology targets with respect to the objective lens, during wafer positioning movements towards the metrology targets. Additional focusing-during-movement module and possibly feedbacking derived position and/or focus information to the stage may enhance the accuracy of the stopping of the stage.

    Systems and methods for defect material classification

    公开(公告)号:US10670537B2

    公开(公告)日:2020-06-02

    申请号:US16357025

    申请日:2019-03-18

    摘要: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

    Capture of repeater defects on a semiconductor wafer

    公开(公告)号:US10557802B2

    公开(公告)日:2020-02-11

    申请号:US16101553

    申请日:2018-08-13

    IPC分类号: G01N21/95 G01N21/88

    摘要: Repeater analysis at a first threshold identifies repeater defects. The repeater defects are located at a coordinate that is the same on each reticle. Images on every reticle of the semiconductor wafer at the coordinate are received, and a plurality of signed difference images are obtained. A repeater threshold for signed difference images is calculated, as is consistency of the polarity. The threshold is applied to the images and a number of defects per each repeater that remain are determined. A secondary repeater threshold can be applied for nuisance filtering.

    Activation of wafer particle defects for spectroscopic composition analysis

    公开(公告)号:US10551320B2

    公开(公告)日:2020-02-04

    申请号:US15419355

    申请日:2017-01-30

    发明人: Kurt L. Haller

    IPC分类号: G01N21/65 G01N21/94 G01N21/95

    摘要: Methods and systems for detecting a particle defect on a wafer surface, transforming the particle to a spectroscopically active state, and identifying a material composition of the activated particle by a spectroscopic technique are described herein. Particle defects are transformed by chemical treatment, thermal treatment, photochemical treatment, or a combination thereof, such that an activated particle exhibits atomic vibrational bands that can be observed spectroscopically. In one embodiment, a surface inspection system detects the presence of a particle defect on a wafer surface, activates observable Raman bands in one or more of the detected particles, and identifies the material composition of the activated particle by a spectroscopic technique. By performing both defect detection and composition analysis on the same inspection tool, it is not necessary to transfer a wafer to a different review tool, or combination of tools, to perform composition analysis of particle defects deposited on semiconductor wafers.

    Ultra-high sensitivity hybrid inspection with full wafer coverage capability

    公开(公告)号:US10545099B1

    公开(公告)日:2020-01-28

    申请号:US16272905

    申请日:2019-02-11

    摘要: Disclosed are apparatus and methods for detecting defects on a semiconductor sample. An optical inspector is first used to inspect a semiconductor sample with an aggressively predefined threshold selected to detect candidate defect and nuisance sites at corresponding locations across the sample. A high-resolution distributed probe inspector includes an array of miniature probes that are moved relative to the sample to scan and obtain a high-resolution image of each site to detect and separate the candidate defect sites from the nuisance sites. A higher-resolution probe is then used to obtain a higher-resolution image of each candidate site to obtain a high-resolution image of each site to separate real defects that adversely impact operation of any devices on the sample from the candidate defects.