Automatic adaptation of the precharge voltage of an electroluminescent display
    52.
    发明授权
    Automatic adaptation of the precharge voltage of an electroluminescent display 有权
    自动调整电致发光显示器的预充电电压

    公开(公告)号:US08044892B2

    公开(公告)日:2011-10-25

    申请号:US11294991

    申请日:2005-12-06

    Abstract: A circuit for controlling a matrix display formed of light-emitting diodes, capable of successively selecting lines of the screen and, for each line from a set of selected lines, of selecting columns, the voltage of each selected column settling at an operating voltage. The circuit is capable, before selection of each line from said set of lines, of precharging at least the columns to be selected to a precharge voltage. The circuit includes a device for adjusting the precharge voltage including a measurement circuit capable, on each selection of a line from said set of lines, of measuring the maximum operating voltage from among the operating voltages of the selected columns; a circuit capable of storing the maximum measured operating voltage; and a circuit capable of adjusting the precharge voltage based on the maximum stored operating voltage.

    Abstract translation: 一种用于控制由发光二极管形成的矩阵显示的电路,其能够连续地选择屏幕线,并且对于来自一组选定行的每行,选择列,以每个选定列的电压在工作电压下稳定。 在从所述线路组中选择每条线路之前,电路能够至少将要选择的列预先充电到预充电电压。 该电路包括用于调整预充电电压的装置,该装置包括测量电路,该测量电路能够从所述一组线路中选择一条线路,从所选列的工作电压中测量最大工作电压; 能够存储最大测量工作电压的电路; 以及能够基于最大存储的工作电压来调节预充电电压的电路。

    METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR-METAL TYPE
    53.
    发明申请
    METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR-METAL TYPE 有权
    形成金属绝缘体金属型三维结构的方法

    公开(公告)号:US20110227194A1

    公开(公告)日:2011-09-22

    申请号:US13052262

    申请日:2011-03-21

    CPC classification number: H01L23/5223 H01L28/60 H01L2924/0002 H01L2924/00

    Abstract: A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.

    Abstract translation: 一种用于在包括一系列金属水平和通孔级别的互连堆叠的金属层中形成电容结构的方法,包括以下步骤:在金属层面形成至少一个其中限定沟槽的导电轨道; 在结构上保形地形成绝缘层; 在沟槽中形成导电材料; 并平坦化结构。

    PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INSULATOR-METAL CAPACITOR AND CORRESPONDING INTEGRATED CIRCUIT
    54.
    发明申请
    PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INSULATOR-METAL CAPACITOR AND CORRESPONDING INTEGRATED CIRCUIT 审中-公开
    用于制造包括金属绝缘体 - 金属电容器和相应的集成电路的集成电路的方法

    公开(公告)号:US20110221035A1

    公开(公告)日:2011-09-15

    申请号:US13034373

    申请日:2011-02-24

    CPC classification number: H01L23/5223 H01L2924/0002 H01L2924/00

    Abstract: An integrated circuit is fabricated by producing metallization levels in insulating regions, the insulating region being formed of a first material having a first dielectric constant. At least one metal-insulator-metal capacitor is formed by providing metal electrodes in the metallization level, and locally replacing the first material, which is located between the metal electrodes, with a second material having a second dielectric constant greater than the first dielectric constant.

    Abstract translation: 通过在绝缘区域中产生金属化水平来制造集成电路,绝缘区域由具有第一介电常数的第一材料形成。 通过在金属化水平中提供金属电极并且将位于金属电极之间的第一材料局部替换为具有大于第一介电常数的第二介电常数的第二材料,形成至少一个金属 - 绝缘体 - 金属电容器 。

    Production of a self-aligned CuSiN barrier
    55.
    发明授权
    Production of a self-aligned CuSiN barrier 有权
    生产自对准CuSiN屏障

    公开(公告)号:US08018062B2

    公开(公告)日:2011-09-13

    申请号:US12695782

    申请日:2010-01-28

    Abstract: A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

    Abstract translation: 半导体产品包括由铜制成的部分,由电介质制成的部分和在铜部分和电介质部分之间的自对准势垒。 自对准势垒包括主要包含第一铜硅化物分子的第一铜硅化物层和主要包含第二硅化铜分子的第二铜硅化物层。 第二硅化物分子中硅原子数的比例高于第一硅化物分子中的比例。 第二硅化铜层位于铜部分和第一铜硅化物层之间。 氮化物层可以覆盖至少部分第一硅化铜层。

    Integrated electrooptic system
    56.
    发明授权
    Integrated electrooptic system 有权
    集成电光系统

    公开(公告)号:US08013284B2

    公开(公告)日:2011-09-06

    申请号:US12685598

    申请日:2010-01-11

    Abstract: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

    Abstract translation: 集成电路包括至少一个能够在可见光谱的至少一个波长的光到达光的时候传递电信号的光敏元件,以及用作电化学快门的电光系统。 电光系统位于能够到达感光元件的至少一条光线的路径中,并且具有取决于电化学反应的至少一种光学性质,其可以通过电控制信号进行修改。 光学性质优选为透射性。

    Control of a triac for the starting of a motor
    57.
    发明授权
    Control of a triac for the starting of a motor 有权
    控制起动电动机的三端双向可控硅开关

    公开(公告)号:US08004231B2

    公开(公告)日:2011-08-23

    申请号:US12391947

    申请日:2009-02-24

    CPC classification number: H02P1/42

    Abstract: A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.

    Abstract translation: 一种用于控制旨在与正温度系数的电阻元件串联连接的三端双向可控硅开关元件或电容元件的电路,以及用于启动异步电动机的绕组,用于由AC电压供电,本发明包括步骤 :检测表示元件和三端双向可控硅开关元件的串联连接上的电压的电压; 将该检测到的电压相对于阈值进行比较; 并且当超过阈值时阻止三端双向可控硅开关的反转。

    Method and device for image interpolation systems based on motion estimation and compensation
    58.
    发明授权
    Method and device for image interpolation systems based on motion estimation and compensation 有权
    基于运动估计和补偿的图像插值系统的方法和装置

    公开(公告)号:US08000386B2

    公开(公告)日:2011-08-16

    申请号:US11136293

    申请日:2005-05-24

    Applicant: Marina Nicolas

    Inventor: Marina Nicolas

    Abstract: A motion estimation method and device are provided for processing images to be inserted, between a preceding original image and a following original image, into a sequence of images. Each image is divided into pixel blocks associated with motion vectors. For a current block of an image being processed, motion vectors associated with blocks of the image being processed and/or associated with blocks of a processed image are selected. Candidate vectors are generated from selected motion vectors. An error is calculated for each candidate vector. A penalty is determined for a subset of candidate vectors on the basis of the values of the pixels of the pixel block in the preceding original image from which the candidate motion vector points to the current block and/or on the basis of the values of the pixels of the pixel block in the following original image to which the candidate motion vector points from the current block.

    Abstract translation: 提供了一种运动估计方法和装置,用于将先前的原始图像和下一个原始图像之间插入的图像处理成图像序列。 每个图像被分成与运动矢量相关联的像素块。 对于正在处理的图像的当前块,选择与被处理图像的块正在处理和/或关联的图像的块相关联的运动矢量。 从选定的运动矢量生成候选向量。 为每个候选向量计算一个错误。 基于候选运动矢量指向当前块的前一原始图像中的像素块的像素值和/或基于当前块的值,确定候选矢量子集的惩罚 下一原始图像中的像素块的像素,候选运动矢量指向的当前块。

    Memory device that takes leakage currents into account in activating the read amplifiers
    59.
    发明授权
    Memory device that takes leakage currents into account in activating the read amplifiers 有权
    在激活读取放大器时考虑到漏电流的存储器件

    公开(公告)号:US07995413B2

    公开(公告)日:2011-08-09

    申请号:US12061238

    申请日:2008-04-02

    CPC classification number: G11C7/14 G11C7/08 G11C11/413

    Abstract: A memory device is a provided that includes memory cells situated at the intersection of lines and columns, and a dummy path including a first dummy column having two bit lines to which there are connected dummy memory cells, and a circuit adapted to select at least one of the dummy memory cells to discharge one of the dummy bit lines. The dummy path also includes at least one second dummy column adapted to generate a dummy leakage current (representing a leakage current of a column of the memory device selected in read mode), and a circuit adapted to copy the dummy leakage current to the one dummy bit line, so that the discharge of the one dummy bit line also depends on the dummy leakage current.

    Abstract translation: 提供了一种存储器件,其包括位于行和列的交点处的存储器单元,以及虚拟路径,包括具有连接有虚拟存储器单元的两个位线的第一虚拟列,以及适于选择至少一个 的虚拟存储单元以排出虚拟位线。 虚拟路径还包括适于产生虚拟泄漏电流(表示在读取模式中选择的存储器件的列的泄漏电流)的至少一个第二虚拟列和适于将虚拟泄露电流复制到一个虚拟的电路 位线,使得一个虚拟位线的放电也取决于虚拟泄漏电流。

    PHASE-SHIFT AMPLIFIER
    60.
    发明申请
    PHASE-SHIFT AMPLIFIER 有权
    相位移位放大器

    公开(公告)号:US20110169572A1

    公开(公告)日:2011-07-14

    申请号:US13006253

    申请日:2011-01-13

    CPC classification number: H03F3/193

    Abstract: A cascode amplifier comprising at least two phase-shift stages controllable between an input transistor having a control terminal connected to an input terminal of the amplifier, and an output terminal of the amplifier.

    Abstract translation: 一种级联放大器,包括至少两个相移级,可在具有连接到放大器的输入端的控制端的输入晶体管与放大器的输出端之间控制。

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