Abstract:
A method and an element of ciphering by an integrated processor of data to be stored in a memory, including applying a ciphering algorithm which is a function of a key specific to the integrated circuit and of an initialization vector, and of memorizing at least the ciphered data, the initialization vector depending at least on the address of storage of the data in the memory.
Abstract:
A circuit for controlling a matrix display formed of light-emitting diodes, capable of successively selecting lines of the screen and, for each line from a set of selected lines, of selecting columns, the voltage of each selected column settling at an operating voltage. The circuit is capable, before selection of each line from said set of lines, of precharging at least the columns to be selected to a precharge voltage. The circuit includes a device for adjusting the precharge voltage including a measurement circuit capable, on each selection of a line from said set of lines, of measuring the maximum operating voltage from among the operating voltages of the selected columns; a circuit capable of storing the maximum measured operating voltage; and a circuit capable of adjusting the precharge voltage based on the maximum stored operating voltage.
Abstract:
A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.
Abstract:
An integrated circuit is fabricated by producing metallization levels in insulating regions, the insulating region being formed of a first material having a first dielectric constant. At least one metal-insulator-metal capacitor is formed by providing metal electrodes in the metallization level, and locally replacing the first material, which is located between the metal electrodes, with a second material having a second dielectric constant greater than the first dielectric constant.
Abstract:
A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.
Abstract:
An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.
Abstract:
A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.
Abstract:
A motion estimation method and device are provided for processing images to be inserted, between a preceding original image and a following original image, into a sequence of images. Each image is divided into pixel blocks associated with motion vectors. For a current block of an image being processed, motion vectors associated with blocks of the image being processed and/or associated with blocks of a processed image are selected. Candidate vectors are generated from selected motion vectors. An error is calculated for each candidate vector. A penalty is determined for a subset of candidate vectors on the basis of the values of the pixels of the pixel block in the preceding original image from which the candidate motion vector points to the current block and/or on the basis of the values of the pixels of the pixel block in the following original image to which the candidate motion vector points from the current block.
Abstract:
A memory device is a provided that includes memory cells situated at the intersection of lines and columns, and a dummy path including a first dummy column having two bit lines to which there are connected dummy memory cells, and a circuit adapted to select at least one of the dummy memory cells to discharge one of the dummy bit lines. The dummy path also includes at least one second dummy column adapted to generate a dummy leakage current (representing a leakage current of a column of the memory device selected in read mode), and a circuit adapted to copy the dummy leakage current to the one dummy bit line, so that the discharge of the one dummy bit line also depends on the dummy leakage current.
Abstract:
A cascode amplifier comprising at least two phase-shift stages controllable between an input transistor having a control terminal connected to an input terminal of the amplifier, and an output terminal of the amplifier.