APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER LEVELING, FORCE BALANCING AND CONTACT SENSING
    52.
    发明申请
    APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER LEVELING, FORCE BALANCING AND CONTACT SENSING 有权
    半导体波浪平衡,力平衡和接触感应的装置和方法

    公开(公告)号:US20140318683A1

    公开(公告)日:2014-10-30

    申请号:US14330536

    申请日:2014-07-14

    IPC分类号: H01L21/68

    摘要: A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.

    摘要翻译: 晶片接合装置包括下卡盘,上卡盘,处理室和三个调节机构。 三个调节机构围绕彼此间隔开的顶盖布置并且位于处理室的外部。 每个调节机构包括用于感测与上卡盘的接触的部件,用于调节上卡盘的预加载力的部件和用于调平上卡盘的部件。

    Device for centering wafers
    53.
    发明授权
    Device for centering wafers 有权
    晶圆定心装置

    公开(公告)号:US08764026B2

    公开(公告)日:2014-07-01

    申请号:US12761044

    申请日:2010-04-15

    IPC分类号: B23B31/18

    摘要: A device for centering circular wafers includes a support chuck for supporting a circular wafer to be centered upon its top surface, left, right and middle centering linkage rods and a cam plate synchronizing the rectilinear motion of the left, right and middle centering linkage rods. The left centering linkage rod includes a first rotating arm at a first end and rectilinear motion of the left centering linkage rod translates into rotational motion of the first rotating arm. The right centering linkage rod comprises a second rotating arm at a first end, and rectilinear motion of the right centering linkage rod translates into rotational motion of the second rotating arm. The first and second rotating arms are rotatable around an axis perpendicular to the top surface of the support chuck and comprise a curved edge surface configured to roll against the curved edge of the circular wafer. The middle centering linkage rod includes a third alignment arm at a first end. The third alignment arm is placed in contact with the curved edge of the circular wafer and linear motion of the middle centering linkage rod in the Y-direction pushes the third alignment arm and the circular wafer toward or away from the center of the support chuck. The cam plate includes first and second linear cam profiles. The first cam profile provides rectilinear motion for the middle centering linkage rod and the second linear cam profile provides rectilinear motion for the left and right centering linkage rods.

    摘要翻译: 用于定心圆形晶片的装置包括支撑卡盘,用于将圆形晶片支撑在其顶部中心定位的中心,左右中心对中连杆和中心对中连杆的直线运动同步的凸轮板。 左对中连杆包括在第一端处的第一旋转臂,并且左对中连杆的直线运动转换成第一旋转臂的旋转运动。 右对中连杆包括在第一端的第二旋转臂,右对中连杆的直线运动转换为第二旋转臂的旋转运动。 第一和第二旋转臂可绕垂直于支撑卡盘的顶表面的轴线旋转,并且包括弯曲的边缘表面,该弯曲边缘表面被配置成相对于圆形晶片的弯曲边缘滚动。 中间定心连杆在第一端包括第三对准臂。 第三对准臂被放置成与圆形晶片的弯曲边缘接触,并且Y中心定中心连杆的线性运动将第三对准臂和圆形晶片推向或远离支撑卡盘的中心。 凸轮板包括第一和第二直线凸轮轮廓。 第一凸轮轮廓为中间定心联动杆提供直线运动,第二直线凸轮轮廓为左右对中连杆提供直线运动。

    Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers
    54.
    发明授权
    Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers 有权
    从超薄晶片的表面去除粘合剂层的装置和方法

    公开(公告)号:US08574398B2

    公开(公告)日:2013-11-05

    申请号:US13115232

    申请日:2011-05-25

    申请人: Gregory George

    发明人: Gregory George

    IPC分类号: B32B38/10

    摘要: An apparatus for removing an adhesive layer from a wafer surface includes a chuck, a contact roller, a pick-up roller and a detaping tape. The chuck supports and holds a wafer that has an adhesive layer on its top surface. The contact roller rotates around a first axis and moves linearly along a direction perpendicular to the first axis over the chuck and the supported wafer. The pick-up roller rotates around a second axis, that is parallel to the first axis. The detaping tape rolls around the contact roller and the pick-up roller, and as it rolls it attaches to the adhesive layer, and then is removed together with the adhesive layer. The contact roller has a surface that has a footprint of a circle when rolled along a flat surface.

    摘要翻译: 用于从晶片表面去除粘合剂层的装置包括卡盘,接触罗拉,拾取辊和装订带。 卡盘支撑并保持在其顶表面上具有粘合剂层的晶片。 接触辊围绕第一轴线旋转并且沿着垂直于第一轴线的方向在卡盘和被支撑的晶片上线性移动。 拾取辊绕与第一轴平行的第二轴旋转。 拾取带卷绕接触辊和拾取辊,并且当其卷绕时附着到粘合剂层,然后与粘合剂层一起去除。 接触辊具有沿平坦表面滚动时具有圆形足迹的表面。

    Debonding equipment and methods for debonding temporary bonded wafers
    55.
    发明授权
    Debonding equipment and methods for debonding temporary bonded wafers 有权
    剥离临时粘结晶片的脱粘设备和方法

    公开(公告)号:US08551291B2

    公开(公告)日:2013-10-08

    申请号:US13087137

    申请日:2011-04-14

    申请人: Gregory George

    发明人: Gregory George

    IPC分类号: B32B38/10

    摘要: A debonder apparatus for debonding a temporary bonded wafer pair. The clam shell reactor includes first and second isolated chambers. An upper chuck is contained within the first chamber and has a lower surface protruding into the second chamber. A lower chuck is contained within the second chamber and has an upper surface oriented parallel and opposite to the lower surface of the upper chuck. The debonder includes means for holding an unbounded surface of the first wafer onto the lower surface of the upper chuck. The first chamber pressurizing means applies pressure onto an upper surface of the upper chuck and thereby causes the lower surface of the upper chuck and the attached wafer pair to bow downward. The debonder apparatus also includes means for initiating a separation front at a point of the bonding interface of the temporary bonded wafer pair.

    摘要翻译: 用于剥离临时键合晶片对的脱粘器装置。 蛤壳式反应器包括第一和第二隔离室。 上卡盘包含在第一腔室内并且具有突出到第二腔室中的下表面。 下卡盘包含在第二腔室内,并具有与上卡盘的下表面平行且相对的上表面。 剥离器包括用于将第一晶片的无界表面保持在上卡盘的下表面上的装置。 第一室加压装置向上卡盘的上表面施加压力,从而使上卡盘的下表面和附接的晶片对向下弯曲。 脱粘器装置还包括用于在临时粘合晶片对的接合界面的点处启动分离前端的装置。

    APPARATUS FOR HIGH THROUGHPUT WAFER BONDING
    56.
    发明申请
    APPARATUS FOR HIGH THROUGHPUT WAFER BONDING 有权
    用于高通量波形焊接的装置

    公开(公告)号:US20120080146A1

    公开(公告)日:2012-04-05

    申请号:US13079446

    申请日:2011-04-04

    申请人: Gregory George

    发明人: Gregory George

    CPC分类号: H01L21/6719 H01L21/67092

    摘要: An industrial-scale high throughput wafer bonding apparatus includes a wafer bonder chamber extending along a main axis and comprising a plurality of chamber zones, a plurality of heater/isolator plates, a guide rod system extending along the main axis, a pair of parallel track rods extending along the main axis, and first pressure means. The chamber zones are separated from each other and thermally isolated from each other by the heater/isolator plates. The heater/isolator plates are oriented perpendicular to the main axis, are movably supported and guided by the guide rod system and are configured to move along the direction of the main axis. Each of the chamber zones is dimensioned to accommodate an aligned wafer pair and the wafer pairs are configured to be supported by the parallel track rods. The first pressure means is configured to apply a first force perpendicular to a first end heater/isolator plate. The applied first force causes the heater/isolator plates to move toward each other along the main axis and thereby causes the collapse of each chamber zone volume and the application of bonding pressure onto the wafer pairs.

    摘要翻译: 一种工业规模的高通量晶片接合装置,包括沿着主轴延伸的晶片接合室,包括多个室区,多个加热器/隔离板,沿主轴延伸的导杆系统,一对平行轨道 杆沿着主轴线延伸,以及第一压力装置。 室区彼此分离并通过加热器/隔离板彼此热隔离。 加热器/隔离板垂直于主轴定向,由导杆系统可移动地支撑和引导,并被构造成沿着主轴线的方向移动。 每个室区的尺寸被设计成适应对准的晶片对,并且晶片对构造成由平行轨道杆支撑。 第一压力装置构造成施加垂直于第一端加热器/隔离板的第一力。 所施加的第一力使得加热器/隔离板沿着主轴线彼此移动,从而导致每个室区域体积的崩溃以及将结合压力施加到晶片对上。

    Rotatable device for holding a substrate
    57.
    发明授权
    Rotatable device for holding a substrate 有权
    用于保持基板的可旋转装置

    公开(公告)号:US07950347B2

    公开(公告)日:2011-05-31

    申请号:US11718572

    申请日:2005-11-03

    IPC分类号: B05C13/00 B05C11/02 B05B13/02

    摘要: The invention provides a rotatable and optionally heatable device for holding a flat substrate. The device includes a supporting means for placing and holding the substrate on a supporting surface, optionally a heater, a means for rotating the supporting means and a means for applying a fluid, e.g. a solvent, onto the side of the substrate facing the supporting surface. The fluid is applied when the supporting device for supporting and holding the substrate is caused to rotate.

    摘要翻译: 本发明提供一种用于保持平坦基底的可旋转和任选可加热的装置。 该装置包括用于将基板放置并保持在支撑表面上的支撑装置,可选地是加热器,用于旋转支撑装置的装置和用于施加流体的装置, 溶剂,位于衬底的面向支撑表面的一侧。 当支撑和保持基板的支撑装置被旋转时,施加流体。

    System and related techniques for handling aligned substrate pairs

    公开(公告)号:US11183401B2

    公开(公告)日:2021-11-23

    申请号:US15680706

    申请日:2017-08-18

    摘要: An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.

    Method for coating a substrate and also a coating system

    公开(公告)号:US10596592B2

    公开(公告)日:2020-03-24

    申请号:US15631498

    申请日:2017-06-23

    摘要: Method for coating a substrate with a coating material is described, in particular with a coating or photoresist, wherein said substrate is provided in said method. Said coating material is applied to said upper side of said substrate. A gas flow is generated, said gas flow being directed from said underside of said substrate to said upper side of said substrate, wherein said gas flow prevents a bead of said coating material forming on said edge of said upper side of said substrate or a previously existing bead is removed by means of said gas flow. In addition, a coating system is described.