摘要:
A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly. Next, initiating horizontal motion of the X-axis carriage drive while heat is applied to the carrier wafer and while the carrier wafer is held by the top chuck assembly.
摘要:
A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.
摘要:
A device for centering circular wafers includes a support chuck for supporting a circular wafer to be centered upon its top surface, left, right and middle centering linkage rods and a cam plate synchronizing the rectilinear motion of the left, right and middle centering linkage rods. The left centering linkage rod includes a first rotating arm at a first end and rectilinear motion of the left centering linkage rod translates into rotational motion of the first rotating arm. The right centering linkage rod comprises a second rotating arm at a first end, and rectilinear motion of the right centering linkage rod translates into rotational motion of the second rotating arm. The first and second rotating arms are rotatable around an axis perpendicular to the top surface of the support chuck and comprise a curved edge surface configured to roll against the curved edge of the circular wafer. The middle centering linkage rod includes a third alignment arm at a first end. The third alignment arm is placed in contact with the curved edge of the circular wafer and linear motion of the middle centering linkage rod in the Y-direction pushes the third alignment arm and the circular wafer toward or away from the center of the support chuck. The cam plate includes first and second linear cam profiles. The first cam profile provides rectilinear motion for the middle centering linkage rod and the second linear cam profile provides rectilinear motion for the left and right centering linkage rods.
摘要:
An apparatus for removing an adhesive layer from a wafer surface includes a chuck, a contact roller, a pick-up roller and a detaping tape. The chuck supports and holds a wafer that has an adhesive layer on its top surface. The contact roller rotates around a first axis and moves linearly along a direction perpendicular to the first axis over the chuck and the supported wafer. The pick-up roller rotates around a second axis, that is parallel to the first axis. The detaping tape rolls around the contact roller and the pick-up roller, and as it rolls it attaches to the adhesive layer, and then is removed together with the adhesive layer. The contact roller has a surface that has a footprint of a circle when rolled along a flat surface.
摘要:
A debonder apparatus for debonding a temporary bonded wafer pair. The clam shell reactor includes first and second isolated chambers. An upper chuck is contained within the first chamber and has a lower surface protruding into the second chamber. A lower chuck is contained within the second chamber and has an upper surface oriented parallel and opposite to the lower surface of the upper chuck. The debonder includes means for holding an unbounded surface of the first wafer onto the lower surface of the upper chuck. The first chamber pressurizing means applies pressure onto an upper surface of the upper chuck and thereby causes the lower surface of the upper chuck and the attached wafer pair to bow downward. The debonder apparatus also includes means for initiating a separation front at a point of the bonding interface of the temporary bonded wafer pair.
摘要:
An industrial-scale high throughput wafer bonding apparatus includes a wafer bonder chamber extending along a main axis and comprising a plurality of chamber zones, a plurality of heater/isolator plates, a guide rod system extending along the main axis, a pair of parallel track rods extending along the main axis, and first pressure means. The chamber zones are separated from each other and thermally isolated from each other by the heater/isolator plates. The heater/isolator plates are oriented perpendicular to the main axis, are movably supported and guided by the guide rod system and are configured to move along the direction of the main axis. Each of the chamber zones is dimensioned to accommodate an aligned wafer pair and the wafer pairs are configured to be supported by the parallel track rods. The first pressure means is configured to apply a first force perpendicular to a first end heater/isolator plate. The applied first force causes the heater/isolator plates to move toward each other along the main axis and thereby causes the collapse of each chamber zone volume and the application of bonding pressure onto the wafer pairs.
摘要:
The invention provides a rotatable and optionally heatable device for holding a flat substrate. The device includes a supporting means for placing and holding the substrate on a supporting surface, optionally a heater, a means for rotating the supporting means and a means for applying a fluid, e.g. a solvent, onto the side of the substrate facing the supporting surface. The fluid is applied when the supporting device for supporting and holding the substrate is caused to rotate.
摘要:
The disclosure relates to a method for coating a substrate with a lacquer. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarising a lacquer layer.
摘要:
An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.
摘要:
Method for coating a substrate with a coating material is described, in particular with a coating or photoresist, wherein said substrate is provided in said method. Said coating material is applied to said upper side of said substrate. A gas flow is generated, said gas flow being directed from said underside of said substrate to said upper side of said substrate, wherein said gas flow prevents a bead of said coating material forming on said edge of said upper side of said substrate or a previously existing bead is removed by means of said gas flow. In addition, a coating system is described.