Abstract:
A purpose of the present invention is to provide: a pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, in the height direction; and a charged particle beam device. In order to achieve the purpose, this pattern height measurement device comprises a calculation device that finds the dimensions of a sample, in the height direction, on the basis of first reflected light information obtained by dispersing light that is reflected when the sample is irradiated with light. The calculation device: finds second reflected light information on the basis of a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs, as the dimension in the height direction of the pattern, the value for the dimension in the height direction of the sample in the second reflected light information when the first reflected light information and the second reflected light information fulfil prescribed conditions.
Abstract:
Devices, methods, and systems for monitoring thickness uniformity are described herein. One system includes a transmitter configured to transmit a signal through a portion of a material while the material is moving, an attenuator configured to absorb a first portion of the transmitted signal, a reflector configured to reflect a second portion of the transmitted signal, a receiver configured to receive the reflected signal, and a computing device configured to determine a thickness of the portion of the material based on a time delay between the transmission of the signal and the reception of the reflected signal
Abstract:
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
Abstract:
Disclosed is an improved system and method to evaluate the status of a material. The system and method are operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials, using electromagnetic waves. The system is designed to reduce a plurality of reflections, associated with the propagation of electromagnetic waves launched into the material under evaluation, by a sufficient extent so as to enable detection of electromagnetic waves of interest reflected from remote discontinuities of the material. Furthermore, the system and method utilize a configuration and signal processing techniques that reduce clutter and enable the isolation of electromagnetic waves of interest. Moreover, the launcher is impedance matched to the material under evaluation, and the feeding mechanism is designed to mitigate multiple reflection effects to further suppress clutter.
Abstract:
A system is provided. The system includes a conveyor apparatus configured for conveying a material and a water content measurement system positioned about the conveyor apparatus for determining water content in the material. A dimension characteristic measurement system for detecting one or more dimension characteristics of the material is provided and a computer device is configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material.
Abstract:
A method and system to detect thickness variation of a subject material are described. In an aspect, tribological wear is assessed for a disk drive memory system at the pole tip region of a magnetic head. Images are obtained of a first region and a second region of a subject material utilizing scanning electron microscopy (SEM). The SEM images are image processed to obtain a differential contrast between the first region and the second region. An image intensity variation is determined between masked SEM images of the first region and the second region by obtaining a surface profiler image of the first region and the second region, and overlaying and calibrating the SEM images with the surface profiler images. In an aspect, image intensity variation is converted to quantified thickness utilizing a fitted relation obtained from the calibration of the surface profiler images with the SEM images.
Abstract:
A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation.
Abstract:
A method of testing a blocking ability of a photoresist blocking layer for ion implantation, comprising: forming a photoresist blocking layer (S1) on a substrate; measuring a first thickness (S2) of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer; implanting a predetermined amount of ions (S3) into the photoresist blocking layer; measuring a second thickness (S4) of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; and determining a blocking ability (S5) of the photoresist blocking layer with the first thickness for ion implantation according to the second thickness. This method does not need to use a testing silicon slice during the process of testing the blocking ability of a photoresist blocking layer for ion implantation, and thus can reduce required costs during the testing process.
Abstract:
Devices, tools, systems and methods for X-ray bone density measurement and imaging for radiography, fluoroscopy and related procedures. Portable, efficient peripheral bone density measurement and/or high resolution imaging and/or small field digital radiography of bone and other tissue, including tissue in the peripheral skeletal system, such as the arm, forearm, leg, hand and/or foot.
Abstract:
A method of measuring a thickness of a Fe—Zn alloy phase included in the Fe—Zn alloy coating of the galvannealed steel sheet includes: an X-ray irradiation process of irradiating the galvannealed steel sheet with the incident X-rays; and an X-ray detection process of detecting the diffracted X-rays obtained in the X-ray irradiation process, derived from a Γ·Γ1 phase, a δ1 phase, and a ζ phase included in the Fe—Zn alloy coating with a crystal lattice spacing d of 1.5 Å or higher.