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    INTEGRATED COHERENT OPTICAL TRANSCEIVER
    51.
    发明公开
    INTEGRATED COHERENT OPTICAL TRANSCEIVER 审中-公开

    公开(公告)号：US20240089002A1

    公开(公告)日：2024-03-14

    申请号：US18502449

    申请日：2023-11-06

    申请人： Marvell Asia Pte Ltd

    发明人： Radhakrishnan L. NAGARAJAN

    IPC分类号： H04B10/40 ,  G02B6/12 ,  G02B6/126 ,  G02B6/42 ,  H01S3/13 ,  H01S5/00 ,  H01S5/0234 ,  H01S5/02375

    CPC分类号： H04B10/40 ,  G02B6/12004 ,  G02B6/126 ,  G02B6/4246 ,  G02B6/428 ,  H01S3/13 ,  H01S5/0085 ,  H01S5/0234 ,  H01S5/02375 ,  G02B6/1228

    摘要： An integrated circuit includes a silicon photonics substrate having a silicon-based material, silicon photonics components formed in the silicon photonics substrate to receive and transmit optical signals, and electrical connections; a transimpedance amplifier chip arranged on the silicon photonics substrate, having a silicon-germanium material that is different than the silicon-based material, connected via the electrical connections to at least one of the silicon photonics components configured to receive an optical signal, and configured to process a received optical signal and output a processed signal to a digital signal processor; and a driver chip arranged on the silicon photonics substrate, having CMOS material that is different than the silicon-germanium material and the silicon-based material, connected via the electrical connections to drive at least one of the silicon photonics components configured to generate an optical signal for transmission.

    SEMICONDUCTOR LASER DEVICE
    54.
    发明公开
    SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：US20230387653A1

    公开(公告)日：2023-11-30

    申请号：US18136248

    申请日：2023-04-18

    申请人： Ushio Denki Kabushiki Kaisha

    发明人： Yutaka Inoue ,  Shigeta Sakai ,  Masato Hagimoto

    IPC分类号： H01S5/0234 ,  H01S5/40 ,  H01S5/10

    CPC分类号： H01S5/0234 ,  H01S5/4031 ,  H01S5/1082

    摘要： A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (m≥1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconductor substrate as a y-axis, and a direction orthogonal to the z-axis and the y-axis as an x-axis, the m laser resonators are located in an area of the stacked growth layer except directly under a center of the second face of the semiconductor substrate in the x-axis direction. More preferably, the m laser resonators are located on the side opposite to the center of the second face of the semiconductor substrate when viewed from the center of the first face thereof.

    Integrated optical transceiver
    55.
    发明授权
    Integrated optical transceiver 有权

    公开(公告)号：US11791899B2

    公开(公告)日：2023-10-17

    申请号：US17857397

    申请日：2022-07-05

    申请人： Marvell Asia Pte Ltd.

    发明人： Ding Liang ,  Mark Patterson ,  Roberto Coccioli ,  Radhakrishnan L. Nagarajan

    IPC分类号： H04B10/40 ,  G02B6/42 ,  H01S5/12 ,  H01S5/02 ,  H01S5/0234 ,  G02F1/313 ,  H04J14/02

    CPC分类号： H04B10/40 ,  G02B6/425 ,  H01S5/021 ,  H01S5/0234 ,  H01S5/12 ,  G02F1/3136 ,  G02F2201/02 ,  H04J14/0221

    摘要： An optical transceiver includes a silicon photonics substrate, transmitter circuitry, and receiver circuitry that are heterogeneously integrated. The transmitter circuitry includes a plurality of laser devices formed on the silicon photonics substrate, each of the plurality of laser devices configured to generate a respective laser light, a plurality of modulators formed on the silicon photonics substrate, each of the plurality of modulators configured to modulate the laser lights based on driver signals and output, from the silicon photonics substrate, the modulated laser lights, and a driver formed on the silicon photonics substrate and configured to generate the driver signals. The receiver circuitry includes a photodetector configured to receive a plurality of optical signals and convert the plurality of optical signals to respective electrical signals and a transimpedance amplifier device configured to receive the electrical signals and output the electrical signals from the silicon photonics substrate as electrical outputs.

    OPTICS FOR LASER ARRAYS
    57.
    发明公开
    OPTICS FOR LASER ARRAYS 审中-公开

    公开(公告)号：US20230208112A1

    公开(公告)日：2023-06-29

    申请号：US18176872

    申请日：2023-03-01

    申请人： II-VI Delaware, Inc.

    发明人： Jason O'DANIEL

    IPC分类号： H01S5/42 ,  H01S5/183 ,  H01S5/0234 ,  H01S5/02253 ,  H01S5/042

    CPC分类号： H01S5/423 ,  H01S5/18305 ,  H01S5/0234 ,  H01S5/02253 ,  H01S5/042

    摘要： In one example, a laser assembly may include a substrate, a lens array, and a laser array. The lens array may be positioned on a first side of the substrate. The laser array may be positioned on a second side of the substrate opposite the first side. Lasers of the laser array may be oriented to generate optical signals through the substrate to corresponding lenses of the lens array. The lens array may include at least one concave lens and at least one convex lens. The concave and convex lenses may map the irradiance of the lasers to a common target irradiance profile, resulting in an alignment tolerant laser assembly.

    SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE
    59.
    发明公开
    SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：US20230198222A1

    公开(公告)日：2023-06-22

    申请号：US17998758

    申请日：2020-09-04

    申请人： Mitsubishi Electric Corporation

    发明人： Kosuke SHINOHARA

    IPC分类号： H01S5/0237 ,  H01S5/042 ,  H01S5/023 ,  H01S5/0234

    CPC分类号： H01S5/0237 ,  H01S5/023 ,  H01S5/0234 ,  H01S5/04256

    摘要： A semiconductor laser comprises: a semiconductor substrate; a semiconductor structure part that is formed on the substrate; a surface electrode formed on the structure part opposite to the substrate; and a conductive member formed on the surface electrode opposite to the substrate. The conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction of an active layer, is formed to be away from an emission facet in the structure part toward a side of the other facet opposed to the emission facet in the x-direction. In the semiconductor laser, a receding portion is formed such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet.