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公开(公告)号：US11944014B2
公开(公告)日：2024-03-26
申请号：US17358435
申请日：2021-06-25
发明人： Sanghwan Park , Jaehoon Kim , Yongsung Park , Hyeonwoo Seo , Sechung Oh , Hyun Cho
CPC分类号： H10N50/10 , G11C11/161 , H10B61/22 , H10N50/80 , H10N50/85
摘要： A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.
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公开(公告)号：US11942129B2
公开(公告)日：2024-03-26
申请号：US17594723
申请日：2020-04-30
发明人： Joseph S. Friedman , Naimul Hassan
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/10 , H10N50/80
摘要： A magnetic tunnel junction is provided. The magnetic tunnel junction comprises an insulating tunnel barrier and a fixed ferromagnet layer adjacent the tunnel barrier. The fixed ferromagnet comprises a fixed magnetization along an easy axis approximately normal to an interface between the fixed ferromagnet and the tunnel barrier. A free ferromagnet layer is adjacent the tunnel barrier on the side opposite the fixed ferromagnet. The free ferromagnet layer comprises a bistable magnetization along the easy axis that can switch between a parallel state and an anti-parallel state with the fixed ferromagnet. A heavy metal layer is adjacent the free ferromagnet on the side opposite the tunnel barrier. A unidirectional electric current pulse through the heavy metal layer switches the bistable magnetization of the free ferromagnet, thereby switching an electrical resistance state of the magnetic tunnel junction.
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公开(公告)号：US20240099156A1
公开(公告)日：2024-03-21
申请号：US18466868
申请日：2023-09-14
申请人： Kioxia Corporation
发明人： Kazuya SAWADA , Toshihiko NAGASE , Kenichi YOSHINO , Hyungjun CHO , Naoki AKIYAMA , Takuya SHIMANO , Tadaaki OIKAWA
摘要： According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).
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公开(公告)号：US11937515B2
公开(公告)日：2024-03-19
申请号：US17884221
申请日：2022-08-09
发明人： Chih-Fan Huang , Hsiang-Ku Shen , Liang-Wei Wang , Chen-Chiu Huang , Dian-Hau Chen , Yen-Ming Chen
摘要： Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a dielectric layer including a top surface, a plurality of magneto-resistive memory cells disposed in the dielectric layer and including top electrodes, a first etch stop layer disposed over the dielectric layer, a common electrode extending through the first etch stop layer to be in direct contact with the top electrodes, and a second etch stop layer disposed on the first etch stop layer and the common electrode. Top surfaces of the top electrodes are coplanar with the top surface of the dielectric layer.
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55.发明授权公开(公告)号：US11937513B2
公开(公告)日：2024-03-19
申请号：US17079422
申请日：2020-10-24
发明人： Xiufeng Han , Ping Tang , Chenyang Guo , Caihua Wan
摘要： The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.
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公开(公告)号：US11937435B2
公开(公告)日：2024-03-19
申请号：US17513273
申请日：2021-10-28
发明人： Ashim Dutta , Chih-Chao Yang
摘要： Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a semiconductor structure. The semiconductor structure may include an embedded magnetic random access memory (MRAM) array electrically connected between a bottom metal level and a top metal level. The MRAM array may include a first tier with first MRAM cells and first vias above the first MRAM cells, and a second tier with second MRAM cells and second vias below the second MRAM cells.
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公开(公告)号：US11935573B2
公开(公告)日：2024-03-19
申请号：US17735931
申请日：2022-05-03
发明人： Sung Chul Lee , Ung Hwan Pi
CPC分类号： G11C11/161 , H10B61/00 , H10N50/10 , H10N50/80
摘要： A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
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公开(公告)号：US20240090343A1
公开(公告)日：2024-03-14
申请号：US18516751
申请日：2023-11-21
发明人： Jun-Yao CHEN , Chun-Heng LIAO , Hung Cho WANG
摘要： The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.
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公开(公告)号：US20240090234A1
公开(公告)日：2024-03-14
申请号：US18512058
申请日：2023-11-17
发明人： Kuo-Hsing Lee , Sheng-Yuan Hsueh , Te-Wei Yeh , Chien-Liang Wu
摘要： A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).
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公开(公告)号：US11930719B2
公开(公告)日：2024-03-12
申请号：US17426508
申请日：2020-01-31
CPC分类号： H10N50/85 , G11C11/161 , H10B61/00 , H10N50/80
摘要： Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.
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